Analog Devices Inc. LTC7060HMSE#TRPBF

Overview

LTC7060HMSE#TRPBF from Analog Devices is a 100V half-bridge gate driver IC designed to control dual N-channel MOSFETs in high-noise, high-voltage power stages. It features independent floating grounds for high-side (BST/SW) and low-side (BGVCC/BGRTN) drivers, 0.8Ω pull-down / 1.5Ω pull-up drive strength, programmable dead-time via external resistor, and adaptive shoot-through protection. It operates with VCC = 6–14V and supports gate drive voltages up to 14V, making it suitable for automotive DC/DC converters and telecom half-bridge inverters.

For engineers reviewing the LTC7060HMSE#TRPBF datasheet, LTC7060HMSE#TRPBF pinout, LTC7060HMSE#TRPBF application, or LTC7060HMSE#TRPBF equivalent, key selection criteria include its ±10V ground differential tolerance, 32–250ns adjustable dead-time range, AEC-Q100 qualification (H-grade), 150°C max junction temperature, and MSOP-12 thermally enhanced package with exposed SGND pad.

Technical Context

The LTC7060HMSE#TRPBF implements a symmetric double-floating architecture: both high-side (TG/SW/BST) and low-side (BG/BGRTN/BGVCC) driver sections operate with independent ground references, enabling robust operation under large common-mode transients. Its three-state PWM input with fixed VIH/VIL thresholds (e.g., VIH(TG) = 3.1V typ, VIL(BG) = 1.25V typ) enables precise half-bridge state control without external logic.

Adaptive shoot-through protection monitors gate-source voltage transitions to prevent simultaneous conduction, while programmable dead-time (via DT pin resistor) ensures safe cross-over timing. UVLO/OVLO circuitry independently monitors VCC (5.3V/14.6V thresholds), BST–SW, and BGVCC–BGRTN supplies, pulling outputs low on fault - all verified across –40°C to 150°C junction temperature.

Key Specifications

Pinout & Package

Package: 12-lead plastic MSOP with exposed thermal pad (Pin 13 = SGND), θ_JA = 40°C/W, rated for 150°C junction operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with LM5109BMM/NOPB and UCC27211DRCR, the LTC7060HMSE#TRPBF uniquely combines AEC-Q100 Grade H qualification, fully independent floating supplies with UVLO, and resistor-programmable dead-time - enabling robust, high-reliability operation in automotive and telecom power stages where ground noise and voltage margining are critical.

Availability

LTC7060HMSE#TRPBF is available at Aetrix Electronics and suitable for automotive power conversion, telecom rectifiers, and industrial motor drives requiring stable component supply across extended temperature and high-reliability lifecycles.

Supply support for LTC7060HMSE#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, and automotive markets.

The LTC7060HMSE#TRPBF belongs to Analog Devices' high-voltage gate driver product line, engineered specifically for noise-immune, high-reliability half-bridge control in automotive and telecom infrastructure applications.

FAQ

What is the maximum operating junction temperature for the LTC7060HMSE#TRPBF?

The LTC7060HMSE#TRPBF is rated for continuous operation up to 150°C junction temperature and is AEC-Q100 qualified as Grade H. Thermal shutdown activates at ~180°C, with automatic recovery below 165°C. The MSOP-12 package features an exposed SGND pad that must be soldered to the PCB ground plane to achieve the specified θ_JA = 40°C/W and sustain full-rated performance at elevated ambient temperatures.

How does the LTC7060HMSE#TRPBF implement adaptive shoot-through protection?

The LTC7060HMSE#TRPBF uses internal hardware-level monitoring of gate-source voltage transitions to prevent simultaneous conduction: it blocks BG turn-on until TG's gate-source voltage falls below threshold, and vice versa. This eliminates reliance on fixed dead-time margins and avoids shoot-through current during fast dV/dt events - a key differentiator versus basic dual drivers like UCC27211DRCR that lack this feature.

Can the LTC7060HMSE#TRPBF drive both logic-level and standard-threshold MOSFETs?

Yes - the LTC7060HMSE#TRPBF supports gate drive voltages from 4V to 14V on both BST–SW and BGVCC–BGRTN rails, enabling compatibility with logic-level (e.g., 4.5V_RDS(on)) and standard-threshold (e.g., 10V_RDS(on)) N-channel MOSFETs. Its 0.8Ω pull-down resistance ensures strong turn-off even with higher-threshold devices, while the 1.5Ω pull-up provides sufficient turn-on current for typical gate charges up to ~100nC.

What is the function of the NC pin on the LTC7060HMSE#TRPBF?

The NC (No Connection) pin on the LTC7060HMSE#TRPBF is intentionally unconnected internally and must remain floating. It is physically placed between high-voltage pins (e.g., SW and BG) to provide creepage/clearance isolation and reduce parasitic coupling in 100V-rated layouts. Soldering or routing to this pin may compromise high-voltage reliability and is strictly prohibited per the datasheet.

Does the LTC7060HMSE#TRPBF require external bootstrap diodes?

Yes - the LTC7060HMSE#TRPBF does not integrate bootstrap diodes. An external Schottky diode (e.g., 1N5819) must connect VCC to BST to recharge the bootstrap capacitor (CB) during low-side conduction. CB value depends on MOSFET gate charge and switching frequency; 0.1µF is typical for single MOSFETs, but larger values are needed for paralleled devices or high-frequency operation to maintain stable BST–SW voltage.