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Analog Devices Inc. LTC7060IMSE#PBF

Part No.:
LTC7060IMSE#PBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
12-TSSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixLTC7060IMSE#PBF.pdf
Description:
IC GATE DRVR HALF-BRIDGE 12MSOP
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,124

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Product details

Overview

LTC7060IMSE#PBF from Analog Devices is a 100V half-bridge gate driver IC for dual N-channel MOSFETs in high-noise industrial and automotive power converters, featuring independent floating grounds (SW and BGRTN), programmable dead-time (32–250 ns), 0.8Ω pull-down / 1.5Ω pull-up drive strength, and adaptive shoot-through protection.

For engineers reviewing the LTC7060IMSE#PBF datasheet, LTC7060IMSE#PBF pinout, LTC7060IMSE#PBF application, or LTC7060IMSE#PBF equivalent, this page delivers verified technical context on symmetric floating architecture, three-state PWM input thresholds, VCC/BGVCC/BST UVLO/OVLO behavior, thermal shutdown at ~180°C, and MSOP-12 package layout constraints for high-voltage half-bridge designs.

Technical Context

The LTC7060IMSE#PBF implements a dual floating-level-shifter architecture: high-side driver referenced to BST/SW and low-side driver referenced to BGVCC/BGRTN, enabling ±10V ground differential tolerance between input (SGND) and output grounds. Its internal logic enforces strict sequencing via adaptive shoot-through protection and DT-pin-programmable propagation delay between complementary outputs.

Three-state PWM input uses fixed VIH(TG)=3.1V/VIL(TG)=2.95V and VIH(BG)=1.0V/VIL(BG)=1.25V thresholds with hysteresis to define high-Z, TG-on, and BG-on states-enabling DCM control without external logic. EN pin (1.2V threshold) provides synchronous disable with 2MΩ internal pull-down.

Key Specifications

Parameter Value and Actual Design Meaning
Max Input Voltage 100V VIN independent of VCC; supports wide-input DC/DC and telecom supplies
VCC Operating Range 6V to 14V; powers internal bias circuitry and generates 4.5V reference for logic
Driver Supply Range 4V to 14V per floating rail (BST-SW and BGVCC-BGRTN); drives logic- or standard-threshold MOSFETs
Pull-Down Resistance 0.8Ω typical (TG & BG); delivers >6A peak sink current at 10V supply for fast turn-off
Pull-Up Resistance 1.5Ω typical (TG & BG); delivers ~3A peak source current at 10V supply for controlled turn-on
Dead-Time Range 32 ns (RDT = 0Ω) to 250 ns (RDT open); set by single resistor from DT to SGND
UVLO Thresholds VCC: 5.3V (falling), BGVCC/BST: 3.4V (falling); prevents erratic switching during brownout

Pinout & Package

Package: 12-lead plastic MSOP (MSE) with exposed thermal pad (Pin 13 = SGND), θJA = 40°C/W, rated for –40°C to 125°C junction temperature.

Pin/Terminal Circuit Role Design Meaning
PWM Three-state logic input Defines TG/BG state via voltage thresholds; floating = high-Z (both off); requires minimized trace capacitance
EN Enable control input Logic-high (>1.2V) enables drivers; internal 2MΩ pull-down ensures default disable
FLT Open-drain fault indicator Pulls low on VCC UVLO/OVLO, floating supply UVLO, or thermal shutdown; 60Ω typical RDS(on)
DT Dead-time programming Resistor to SGND sets BG→TG and TG→BG propagation delay (32–250 ns); no capacitor required
VCC IC bias supply Powers internal logic; bypass with ≥0.1µF ceramic to SGND; independent of VIN
BGVCC Low-side driver supply Supplies BG output relative to BGRTN; requires local bootstrap capacitor to BGRTN
BGRTN Low-side return reference Kelvin-connected to bottom MOSFET source; tolerates –10V to 100V vs SGND
BG Low-side gate driver output Drives N-MOSFET gate between BGVCC and BGRTN; 0.8Ω pull-down / 1.5Ω pull-up
BST High-side driver supply Supplies TG output relative to SW; requires local bootstrap capacitor to SW
TG High-side gate driver output Drives N-MOSFET gate between BST and SW; symmetric drive strength to BG
SW High-side return reference Kelvin-connected to top MOSFET source; tolerates –10V to 100V vs SGND
NC No internal connection Physically isolated to prevent HV coupling; must remain unconnected

Key Features

Feature Design Value
Symmetric floating architecture Independent SW and BGRTN references enable ±10V ground differential tolerance and noise immunity in high-dv/dt environments
Adaptive shoot-through protection Monitors external MOSFET VGS transitions to prevent simultaneous conduction-no external timing components needed
Three-state PWM interface Fixed VIH/VIL thresholds with hysteresis allow controller-driven high-Z mode for DCM, eliminating need for external gate logic
Programmable dead-time Single RDT resistor sets identical BG→TG and TG→BG delays (32–250 ns), simplifying layout vs dual-resistor schemes
Triple UVLO monitoring Independent lockout for VCC, BGVCC-BGRTN, and BST-SW ensures safe operation even if one floating supply collapses

Applications

Automotive DC/DC Converters Industrial Half-Bridge Inverters

Use Scenario: 48V–12V bidirectional buck-boost converter in EV battery management systems.

IC Role / Device Role / Timing Role: Half-bridge gate driver controlling dual N-MOSFETs with independent floating grounds to isolate 48V domain from 12V control logic.

Use Value: ±10V ground differential tolerance prevents mis-triggering during load dump transients; AEC-Q100 qualification ensures automotive reliability.

Use Scenario: 100V input industrial motor drive half-bridge stage operating in noisy factory environments.

IC Role / Device Role / Timing Role: High-noise-immunity gate driver delivering 0.8Ω/1.5Ω drive to large gate-charge MOSFETs while maintaining precise dead-time control.

Use Value: Adaptive shoot-through protection eliminates cross-conduction risk during rapid dv/dt switching; thermal shutdown at ~180°C protects against overload.

Telecom Power Supplies Switched-Capacitor Converters

Use Scenario: High-density 48V telecom rectifier with synchronous rectification and tight thermal constraints.

IC Role / Device Role / Timing Role: Floating gate driver enabling compact layout with Kelvin-source connections to minimize parasitic inductance in high-frequency (500kHz+) operation.

Use Value: 18ns rise/fall time into 3.3nF load ensures minimal switching loss; MSOP-12 exposed pad supports 40°C/W thermal performance.

Use Scenario: Multiphase charge-pump voltage doubler for GaN-based RF power amplifiers.

IC Role / Device Role / Timing Role: Precision dead-time-controlled driver managing overlapping switching phases to maximize charge transfer efficiency.

Use Value: DT-pin programmability allows fine-tuning dead-time (32–250 ns) to match specific capacitor ESR and switching frequency, minimizing circulating current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
LM5109BMM/NOPB Fixed 120ns dead-time; no DT pin adjustment; lower max VIN (65V); no adaptive shoot-through protection Suitable for cost-sensitive, lower-voltage (<65V) industrial SMPS where programmable dead-time is not required Select when design prioritizes simplicity over flexibility and operates below 65V input
UCC27211DRCR Non-floating architecture (single ground); higher drive strength (4A source/4A sink); no UVLO on floating rails Better for low-noise, single-ground systems like server VRMs; unsuitable for high dv/dt or ground-isolated topologies Choose for high-current, low-voltage (<20V) synchronous buck where ground separation is unnecessary

Compared with LM5109BMM/NOPB and UCC27211DRCR, the LTC7060IMSE#PBF uniquely supports 100V operation with dual floating grounds, programmable dead-time, and adaptive shoot-through-making it the only option among the three qualified for AEC-Q100 automotive use and robust high-noise half-bridge designs.

Availability

LTC7060IMSE#PBF is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial motor drives, telecom power supplies, and switched-capacitor converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for LTC7060IMSE#PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, communications, and automotive markets.

The LTC7060IMSE#PBF belongs to Analog Devices' high-voltage power management portfolio, designed specifically for noise-immune, floating-gate half-bridge control in demanding automotive and industrial power conversion systems.

FAQ

What is the maximum input voltage rating for the LTC7060IMSE#PBF?

The LTC7060IMSE#PBF supports up to 100V on the VIN node (SW and BGRTN pins), independent of the VCC supply voltage. This allows direct integration into high-input-voltage DC/DC converters without level-shifting circuitry. Absolute maximum ratings specify –10V to 100V for SW and BGRTN relative to SGND, with BST and BGVCC rated to 115V.

How does the three-state PWM input function on the LTC7060IMSE#PBF?

The LTC7060IMSE#PBF PWM pin interprets three voltage states: >3.1V enables TG-on, <1.0V enables BG-on, and 1.9–2.3V (floating) forces high-Z mode where both TG and BG are turned off. Internal 48kΩ pull-up and 42kΩ pull-down resistors create a defined threshold window, enabling Discontinuous Conduction Mode (DCM) control directly from a microcontroller GPIO without external logic.

What is the purpose of the DT pin on the LTC7060IMSE#PBF?

The DT pin on the LTC7060IMSE#PBF programs the dead-time between complementary TG and BG transitions using a single resistor to SGND. It sets identical propagation delays for BG→TG and TG→BG edges-from 32 ns (0Ω) to 250 ns (open). This eliminates shoot-through risk in high-voltage half-bridges and enables optimization for specific MOSFET gate charge and switching frequency.

Does the LTC7060IMSE#PBF include protection features beyond UVLO?

Yes, the LTC7060IMSE#PBF integrates adaptive shoot-through protection that monitors external MOSFET VGS to prevent simultaneous conduction, thermal shutdown at ~180°C (resumes at 165°C), and open-drain FLT pin reporting all faults-including VCC UVLO/OVLO, BGVCC-BGRTN UVLO, BST-SW UVLO, and overtemperature-with 100µs release delay after fault clearance.

Is the LTC7060IMSE#PBF qualified for automotive applications?

Yes, the LTC7060IMSE#PBF is AEC-Q100 qualified for automotive applications (Grade I: –40°C to +125°C junction temperature). It meets stringent reliability, ESD, and transient immunity requirements for under-hood and battery-management systems, and its symmetric floating architecture provides inherent noise immunity critical for automotive 48V/12V DC/DC converters.

LTC7060IMSE#PBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
12-TSSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tube
Product Status:
Active
Programmable:
-
Driven Configuration:
Half-Bridge
Channel Type:
-
Number of Drivers:
-
Gate Type:
-
Voltage - Supply:
6V ~ 14V
Logic Voltage - VIL, VIH:
-
Current - Peak Output (Source, Sink):
-
Input Type:
-
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
12-MSOP-EP

LTC7060IMSE#PBF FAQ

1.How can I place an order for LTC7060IMSE#PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC7060IMSE#PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC7060IMSE#PBF reliable?

The price and inventory of LTC7060IMSE#PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC7060IMSE#PBF is usually 5 days.

3.What payment methods are accepted for LTC7060IMSE#PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC7060IMSE#PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LTC7060IMSE#PBF?

LTC7060IMSE#PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC7060IMSE#PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC7060IMSE#PBF?

For technical support, including LTC7060IMSE#PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC7060IMSE#PBF requirements.

6.How does Aetrix verify that LTC7060IMSE#PBF is sourced from the original manufacturer or authorized distributors?

All LTC7060IMSE#PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC7060IMSE#PBF meets industry standards.

7.What is the process for return or replacement of LTC7060IMSE#PBF?

All LTC7060IMSE#PBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC7060IMSE#PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC7060IMSE#PBF part is unused and in its original packaging.

Return procedure for LTC7060IMSE#PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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