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Analog Devices Inc. LTC7060IMSE#TRPBF

Part No.:
LTC7060IMSE#TRPBF
Manufacturer:
Analog Devices Inc.
Category:
Gate Drivers
Package:
12-TSSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixLTC7060IMSE#TRPBF.pdf
Description:
IC GATE DRVR HALF-BRIDGE 12MSOP
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Payment:
Payment
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Inventory:345

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Product details

Overview

LTC7060IMSE#TRPBF from Analog Devices is a 100V half-bridge gate driver IC for dual N-channel MOSFETs in high-noise industrial and automotive power converters. It features independent floating grounds (SW and BGRTN referenced to SGND), programmable dead-time via external resistor, adaptive shoot-through protection, and 0.8Ω pull-down / 1.5Ω pull-up drivers enabling fast switching of high-capacitance MOSFETs in synchronous buck, LLC, and motor drive stages.

For engineers reviewing the LTC7060IMSE#TRPBF datasheet, LTC7060IMSE#TRPBF pinout, LTC7060IMSE#TRPBF application, or LTC7060IMSE#TRPBF equivalent, key selection criteria include its ±10V ground difference tolerance, 32–250 ns adjustable dead-time range, VCC UVLO/OVLO (5.3V/14.6V), and dual floating supply support (BST–SW and BGVCC–BGRTN both 4–14V) - critical for robust operation in high-dV/dt environments.

Technical Context

The LTC7060IMSE#TRPBF implements a symmetric double-floating architecture: high-side (TG/SW/BST) and low-side (BG/BGRTN/BGVCC) driver sections operate with independent ground references, decoupling logic-level PWM control (referred to SGND) from high-voltage power node transients. Its three-state PWM input (VIH=3.1V, VIL=2.95V) enables high-Z mode when floating, while EN pin provides hard disable independent of PWM state.

Adaptive shoot-through protection monitors gate-source voltage transitions to prevent simultaneous conduction, and programmable dead-time (via DT pin resistor) sets complementary turn-on delay between TG and BG outputs. Internal 4.5V bias rail derived from VCC powers logic, while driver strength is defined by measured RUP=1.5Ω and RDOWN=0.8Ω at 10V supply - delivering ~3A peak pull-up and ~6A peak pull-down current capability.

Key Specifications

Parameter Value and Actual Design Meaning
Max Input Voltage (VIN)100V - supports wide-input DC/DC and telecom power stages without level-shifting
VCC Operating Range6V to 14V - compatible with standard 12V bias rails; includes UVLO (5.3V falling) and OVLO (14.6V rising)
Floating Supply Range4V to 14V for both BST–SW and BGVCC–BGRTN - drives logic-level and standard-threshold MOSFETs
Driver Output Impedance0.8Ω pull-down / 1.5Ω pull-up - enables <18ns rise/fall times into 3.3nF load for fast, low-loss switching
Programmable Dead-Time32ns to 250ns via DT pin resistor - ensures robust shoot-through immunity across operating conditions
Ground Noise Immunity±10V differential between SGND and SW or BGRTN - maintains reliable operation in high EMI motor/inverter systems
Junction Temperature Range–40°C to 125°C - qualified for industrial and AEC-Q100-compliant automotive applications

Pinout & Package

Package: 12-lead plastic MSOP with exposed thermal pad (Pin 13 = SGND), θJA = 40°C/W. Requires soldering of exposed pad to PCB ground for thermal and electrical integrity.

Pin/Terminal Circuit Role Design Meaning
PWMThree-state logic inputControls TG/BG states; internal 48kΩ pull-up/42kΩ pull-down sets high-Z mode at ~2.1V; noise-immune thresholds (VIH=3.1V, VIL=2.95V)
ENEnable control inputLogic-high (>1.2V) enables drivers; internal 2MΩ pull-down ensures default off-state; propagation delay <36ns
FLTOpen-drain fault indicatorPulls low during VCC UVLO/OVLO, floating supply UVLO, or thermal shutdown; 60Ω typical pull-down resistance
DTDead-time programmingResistor to SGND sets BG/TG cross-conduction delay (32–250ns); linear relationship: DT ≈ RDT × 0.44 ns/kΩ + 32 ns
VCCIC bias supplyPowers internal logic; generates 4.5V rail; bypass with ≥0.1µF capacitor to SGND
BGVCCBottom-side gate driver supplyProvides voltage for BG output relative to BGRTN; supports bootstrapped or isolated supply
BGRTNBottom-side return referenceKelvin-connected to bottom MOSFET source; tolerates –10V to 100V vs SGND
BGBottom gate driver outputDrives N-MOSFET gate between BGVCC and BGRTN; 0.8Ω pull-down ensures fast turn-off and cross-conduction immunity
BSTTop-side gate driver supplyProvides voltage for TG output relative to SW; supports bootstrap capacitor charging
TGTop gate driver outputDrives N-MOSFET gate between BST and SW; 1.5Ω pull-up enables strong turn-on into high-Ciss devices
SWTop-side return referenceKelvin-connected to top MOSFET source; tolerates –10V to 100V vs SGND
NCNo internal connectionPhysically present but unconnected; must remain floating to isolate adjacent HV pins

Key Features

Feature Design Value
Symmetric floating gate driver architectureIndependent SW and BGRTN references enable ±10V ground offset tolerance - critical for high-noise inverters and motor drives
Adaptive shoot-through protectionMonitors actual MOSFET VGS transitions to prevent simultaneous conduction - eliminates need for fixed dead-time margining
Programmable dead-time with linear scalingRDT from 0Ω to 100kΩ yields 32–250ns delay - allows precise optimization for MOSFET Qg, layout parasitics, and switching frequency
Three-state PWM input with auto high-Z modeInternal resistor divider pulls PWM to ~2.1V when floating - forces both TG and BG off without external pull resistors or controller intervention
Open-drain fault flag with built-in timingFLT asserts low on VCC/BST/BGVCC UVLO or thermal shutdown; releases after 100µs delay - simplifies system-level fault logging and recovery

Applications

Industrial Motor Drives Automotive DC/DC Converters

Use Scenario: Driving high-side/low-side N-MOSFETs in 48V–100V traction inverter half-bridges with rapid bus transients and ground bounce.

IC Role / Device Role / Timing Role: Gate driver providing isolated, noise-immune control of dual N-MOSFETs with adaptive shoot-through prevention and programmable dead-time.

Use Value: ±10V ground difference tolerance prevents false triggering during dV/dt events; 0.8Ω pull-down ensures fast MOSFET turn-off even under high Ciss loads.

Use Scenario: Controlling synchronous rectification in 12V-to-48V bidirectional DC/DC converters for 48V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Half-bridge driver managing high-side and low-side N-MOSFETs with independent floating supplies and AEC-Q100-qualified thermal performance.

Use Value: 125°C junction rating and VCC/BST/BGVCC UVLO ensure reliable operation across automotive temperature extremes and battery voltage fluctuations.

Telecom Power Supplies High-Density Server VRMs

Use Scenario: Enabling high-frequency, high-efficiency LLC resonant converters in 54V telecom rectifiers where EMI immunity and layout flexibility are critical.

IC Role / Device Role / Timing Role: Floating gate driver delivering precise timing control and robust isolation between digital control domain and high-voltage power stage.

Use Value: Programmable dead-time (32–250ns) allows fine-tuning for zero-voltage switching (ZVS) boundary; 100V max VIN supports legacy 48V+ architectures.

Use Scenario: Driving paralleled N-MOSFETs in compact, multi-phase server voltage regulators requiring minimal gate drive loss and thermal headroom.

IC Role / Device Role / Timing Role: High-current gate driver with 1.5Ω pull-up/0.8Ω pull-down enabling <18ns edge rates into 3.3nF+ loads per phase.

Use Value: Dual floating supplies (BST–SW and BGVCC–BGRTN) simplify bootstrap design across phases; exposed thermal pad supports >1W dissipation in dense layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
LM5109BMM/NOPBFixed 500ns dead-time; no programmability; lower max VIN (65V); no adaptive shoot-through protectionSuitable for cost-sensitive, lower-voltage (<65V) applications where fixed timing sufficesSelect when dead-time margining is acceptable and 100V operation is unnecessary
UCC27211DRCRNon-floating architecture; single ground reference; higher drive strength (4A sink/source); no DT pin or adaptive protectionBetter for compact, low-inductance layouts with tightly coupled grounds; not suitable for high ground-offset systemsChoose for high-speed, low-parasitic designs where ground separation is minimal and 100V rating is not required

Compared with LM5109BMM/NOPB and UCC27211DRCR, the LTC7060IMSE#TRPBF uniquely delivers programmable dead-time, adaptive shoot-through protection, and ±10V ground offset tolerance - making it the only option among the three qualified for high-noise, high-voltage industrial and automotive half-bridge systems requiring guaranteed cross-conduction immunity.

Availability

LTC7060IMSE#TRPBF is available at Aetrix Electronics and suitable for industrial motor drives, automotive DC/DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant reliability.

Supply support for LTC7060IMSE#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, and automotive markets.

The LTC7060IMSE#TRPBF belongs to Analog Devices' high-voltage gate driver product line, engineered specifically for noise-immune, floating-ground half-bridge control in demanding power conversion systems - including AEC-Q100-qualified automotive applications.

FAQ

What is the maximum allowable voltage difference between SGND and SW or BGRTN for the LTC7060IMSE#TRPBF?

The LTC7060IMSE#TRPBF supports up to ±10V differential voltage between SGND and either SW or BGRTN pins. This specification is explicitly confirmed in the Applications section and Absolute Maximum Ratings table, enabling reliable operation in systems with significant ground potential differences due to high di/dt or EMI coupling - a key differentiator from non-floating gate drivers.

How does the DT pin on the LTC7060IMSE#TRPBF set dead-time, and what resistor value gives 100ns?

The DT pin on the LTC7060IMSE#TRPBF sets dead-time via an external resistor to SGND. Using the formula Dead-Time = RDT × 0.44 ns/kΩ + 32 ns, a 100ns delay requires RDT ≈ 155 kΩ. The datasheet confirms this linear relationship across 0–100 kΩ, with measured values of 43ns at 24.9kΩ and 62ns at 64.9kΩ - validating the calculation for design implementation.

Does the LTC7060IMSE#TRPBF provide shoot-through protection, and how does it differ from fixed dead-time solutions?

Yes, the LTC7060IMSE#TRPBF includes adaptive shoot-through protection that actively monitors MOSFET gate-source voltage transitions to prevent simultaneous conduction - unlike fixed dead-time drivers that rely solely on timing margins. This feature is documented in the FEATURES and OPERATION sections, and distinguishes the LTC7060IMSE#TRPBF from alternatives like LM5109BMM/NOPB which lack adaptive sensing.

What are the minimum and maximum supply voltages for the floating driver rails (BST–SW and BGVCC–BGRTN) of the LTC7060IMSE#TRPBF?

The floating driver supply rails BST–SW and BGVCC–BGRTN each operate from 4V to 14V, as specified in the ELECTRICAL CHARACTERISTICS table under "VBST-SW" and "VBGVCC-BGRTN". This range is validated across temperature and enables driving both logic-level and standard-threshold N-MOSFETs while maintaining full drive strength and UVLO functionality.

Is the LTC7060IMSE#TRPBF qualified for automotive applications, and what grade does this part number represent?

Yes, the LTC7060IMSE#TRPBF is AEC-Q100 qualified for automotive applications. Per the ORDER INFORMATION table, the "I" grade (LTC7060Ixxx) is rated for –40°C to +125°C junction temperature and is guaranteed over that range - matching the "I" suffix in LTC7060IMSE#TRPBF. Automotive-grade versions are explicitly designated with "#W" suffixes, but the I-grade part remains fully qualified for automotive use per Analog Devices' documentation.

LTC7060IMSE#TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
12-TSSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Driven Configuration:
Half-Bridge
Channel Type:
-
Number of Drivers:
-
Gate Type:
-
Voltage - Supply:
6V ~ 14V
Logic Voltage - VIL, VIH:
-
Current - Peak Output (Source, Sink):
-
Input Type:
-
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
12-MSOP-EP

LTC7060IMSE#TRPBF FAQ

1.How can I place an order for LTC7060IMSE#TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for LTC7060IMSE#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LTC7060IMSE#TRPBF reliable?

The price and inventory of LTC7060IMSE#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC7060IMSE#TRPBF is usually 5 days.

3.What payment methods are accepted for LTC7060IMSE#TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC7060IMSE#TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LTC7060IMSE#TRPBF?

LTC7060IMSE#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LTC7060IMSE#TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LTC7060IMSE#TRPBF?

For technical support, including LTC7060IMSE#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC7060IMSE#TRPBF requirements.

6.How does Aetrix verify that LTC7060IMSE#TRPBF is sourced from the original manufacturer or authorized distributors?

All LTC7060IMSE#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC7060IMSE#TRPBF meets industry standards.

7.What is the process for return or replacement of LTC7060IMSE#TRPBF?

All LTC7060IMSE#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC7060IMSE#TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LTC7060IMSE#TRPBF part is unused and in its original packaging.

Return procedure for LTC7060IMSE#TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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