Analog Devices Inc. LTC7060IMSE#WPBF

Overview

LTC7060IMSE#WPBF from Analog Devices is a 100V half-bridge gate driver IC designed to control dual N-channel MOSFETs in high-noise, high-voltage power stages. It features independent floating grounds for high-side (BST/SW) and low-side (BGVCC/BGRTN) drivers, 0.8Ω pull-down / 1.5Ω pull-up drive strength, programmable dead-time via external resistor, and adaptive shoot-through protection. It operates with VCC = 6–14V and supports gate driver supplies from 4V to 14V - ideal for automotive DC/DC converters and telecom half-bridge inverters.

For engineers reviewing the LTC7060IMSE#WPBF datasheet, LTC7060IMSE#WPBF pinout, LTC7060IMSE#WPBF application, or LTC7060IMSE#WPBF equivalent, key selection considerations include its ±10V ground difference tolerance, AEC-Q100 qualification, 32–250 ns adjustable dead-time range, open-drain FLT fault flag, and thermally enhanced 12-lead MSOP package with exposed SGND pad.

Technical Context

The LTC7060IMSE#WPBF implements a symmetric double-floating architecture: both high-side (TG/SW/BST) and low-side (BG/BGRTN/BGVCC) driver sections operate with independent ground references, enabling robust operation under large ground potential differences (±10V). Its three-state PWM input uses fixed VIH/VIL thresholds (e.g., VIH(TG) = 3.1V typ, VIL(BG) = 1.25V typ) and internal 48kΩ pull-up / 42kΩ pull-down resistors to enforce high-impedance off-state when floating.

Protection is implemented at multiple levels: VCC UVLO/OVLO (5.3V/14.6V), floating supply UVLO on both BGVCC-BGRTN and BST-SW (3.4V), adaptive shoot-through detection based on MOSFET gate-source voltage sequencing, and thermal shutdown at ~180°C. The DT pin sets matched propagation delays (tPLH(BG/TG)) from 32 ns (RDT = 0 Ω) to 250 ns (RDT open), ensuring precise dead-time control without external timing components.

Key Specifications

Pinout & Package

Package: 12-lead plastic MSOP with exposed thermal pad (Pin 13 = SGND), θJA = 40°C/W. Requires soldering of exposed pad to PCB ground for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with LM5109BMM/NOPB and UCC27211DRCR, the LTC7060IMSE#WPBF uniquely delivers certified automotive reliability, true dual-floating-supply operation, and field-programmable dead-time - making it the only option among the three qualified for safety-critical 48V–100V automotive power conversion with stringent noise immunity requirements.

Availability

LTC7060IMSE#WPBF is available at Aetrix Electronics and suitable for automotive DC/DC converters, telecom power inverters, and industrial motor drives requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle support.

Supply support for LTC7060IMSE#WPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, and automotive markets.

The LTC7060IMSE#WPBF belongs to Analog Devices' Power by Linear™ high-voltage gate driver family, engineered specifically for noise-immune, high-reliability half-bridge control in automotive and industrial power systems.

FAQ

What is the maximum allowable voltage difference between SGND and BGRTN or SW in the LTC7060IMSE#WPBF?

The LTC7060IMSE#WPBF supports up to ±10V differential voltage between SGND and either BGRTN or SW pins. This specification is explicitly guaranteed in the Absolute Maximum Ratings table and enables robust operation in systems with significant ground potential shifts - such as automotive chassis-grounded controllers driving battery-grounded power stages. Exceeding ±10V may compromise noise immunity or damage internal level shifters.

Does the LTC7060IMSE#WPBF require external bootstrap diodes for high-side drive?

No, the LTC7060IMSE#WPBF does not integrate bootstrap diodes. An external Schottky diode must be placed between VCC (or another bias rail) and the BST pin to charge the BST–SW bootstrap capacitor during low-side conduction. This is required to maintain sufficient gate drive voltage for the high-side N-MOSFET when SW swings near VIN. The datasheet recommends low-forward-voltage, fast-recovery diodes with adequate current rating.

How is dead-time programmed on the LTC7060IMSE#WPBF, and what is the minimum achievable value?

Dead-time on the LTC7060IMSE#WPBF is set by connecting a resistor (R_DT) from the DT pin to SGND. The resulting tPLH(BG/TG) delay ranges from 32 ns (R_DT = 0 Ω) to 250 ns (R_DT open). At R_DT = 0 Ω, the minimum guaranteed dead-time is 32 ns - verified across temperature and process corners - enabling high-frequency operation while maintaining shoot-through immunity.

Is the LTC7060IMSE#WPBF pin-compatible with other members of the LTC706x family?

No, the LTC7060IMSE#WPBF is not pin-compatible with LTC7061, LTC7062, or LTC7063. While all share the same 12-lead MSOP package, pin functions differ significantly - for example, LTC7061 uses CMOS/TTL logic inputs instead of three-state PWM, and LTC7062 lacks shoot-through protection. Substitution requires schematic and layout revision; only the LTC7060IMSE#WPBF supports the full feature set described in this product page.

What fault conditions cause the FLT pin on the LTC7060IMSE#WPBF to assert?

The FLT pin on the LTC7060IMSE#WPBF pulls low during four distinct fault conditions: (1) VCC UVLO (below 5.3V) or OVLO (above 14.6V), (2) BGVCC–BGRTN UVLO (below 3.4V), (3) BST–SW UVLO (below 3.4V), and (4) junction temperature exceeding ~180°C. After fault clearance, FLT releases after a fixed 100 µs delay, allowing clean system-level fault recovery without race conditions.