Analog Devices Inc. LTC7067RMSE#TRPBF

Overview

LTC7067RMSE#TRPBF from Analog Devices is a 150V dual high-side N-channel MOSFET gate driver IC with independent floating supplies, 0.8Ω pull-down / 1.5Ω pull-up drive strength, TTL/CMOS-compatible inputs, and open-drain fault indicator. It operates with VCC = 5–14V and floating gate driver supplies up to 140V, enabling robust control of high-voltage power stages in automotive and industrial DC/DC converters.

For engineers reviewing the LTC7067RMSE#TRPBF datasheet, LTC7067RMSE#TRPBF pinout, LTC7067RMSE#TRPBF application, or LTC7067RMSE#TRPBF equivalent, key selection criteria include its ±10V ground difference tolerance, symmetric dual-channel architecture, 20ns propagation delay, thermal shutdown at ~180°C, and AEC-Q100 qualification for automotive power systems.

Technical Context

The LTC7067RMSE#TRPBF integrates two fully independent high-side gate drivers, each with dedicated level-shifted logic, UVLO monitoring on both VCC (4.3V falling) and floating supplies (3.4V falling), and separate G1RTN/G2RTN return paths tolerant of −10V to +150V relative to SGND. Its internal 4.5V bias rail powers core logic while G1VCC–G1RTN and G2VCC–G2RTN supply the output stages.

Each channel features a P-channel pull-up (1.5Ω typ.) and N-channel pull-down (0.8Ω typ.), delivering ~3A peak pull-up and ~6A peak pull-down current at 10V supply, enabling fast switching of large-gate-charge MOSFETs (e.g., 3nF load with 18ns rise time). Fault detection includes VCC UVLO/OVLO, floating supply UVLO, and thermal shutdown, all asserted via open-drain FLT pin with 60Ω internal pull-down and 100µs delay.

Key Specifications

Pinout & Package

Package: 12-lead plastic MSOP with exposed thermal pad (pin 13 = SGND), θ_JA = 40°C/W. Requires soldering of exposed pad to PCB ground for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side dual gate driver applications.

Compared with LTC7063 and LTC7061, the LTC7067RMSE#TRPBF uniquely combines 150V capability, AEC-Q100 qualification, and symmetric dual-channel independence without dead-time circuitry - making it optimal for automotive and high-reliability 135V+ power conversion where timing is managed externally.

Availability

LTC7067RMSE#TRPBF is available at Aetrix Electronics and suitable for automotive power converters, industrial telecom rectifiers, and high-noise motor drives requiring stable component supply, long-lifecycle support, and AEC-Q100 compliance.

Supply support for LTC7067RMSE#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision, power, and RF markets since 1965.

The LTC7067RMSE#TRPBF belongs to Analog Devices' high-voltage gate driver product line, engineered specifically for noise-immune, floating high-side control in automotive and industrial power conversion systems operating up to 150V.

FAQ

What is the maximum allowable voltage difference between G1RTN/G2RTN and SGND for the LTC7067RMSE#TRPBF?

The LTC7067RMSE#TRPBF allows G1RTN and G2RTN pins to operate from −10V to +150V relative to SGND, enabling robust noise immunity in high-dv/dt environments. This specification is confirmed in the Absolute Maximum Ratings table and supports Kelvin connection directly to MOSFET sources without level-shifting circuitry. The LTC7067RMSE#TRPBF maintains full functionality across this range as long as floating supply voltages remain within 4V–14V.

Does the LTC7067RMSE#TRPBF support bootstrapped gate drive configurations?

Yes, the LTC7067RMSE#TRPBF explicitly supports bootstrapped supplies on both G1VCC–G1RTN and G2VCC–G2RTN. The datasheet specifies that external boost capacitors must exceed 10× the gate charge (QG) of the driven MOSFET, with 0.1µF typically sufficient for single devices. The LTC7067RMSE#TRPBF does not charge the bootstrap capacitor - an external Schottky diode from VCC (or another supply) to G1VCC/G2VCC is required to maintain voltage during high-side conduction.

How does the FLT pin behave during fault conditions on the LTC7067RMSE#TRPBF?

The FLT pin on the LTC7067RMSE#TRPBF is an open-drain output pulled low to SGND when any of these occur: VCC UVLO/OVLO, G1VCC–G1RTN UVLO, G2VCC–G2RTN UVLO, or thermal shutdown (~180°C). After faults clear, FLT returns high after a fixed 100µs internal delay. The LTC7067RMSE#TRPBF includes a 60Ω internal pull-down resistor, so an external pull-up (e.g., 51kΩ to VCC) is mandatory for proper logic-level signaling.

What is the thermal performance requirement for the LTC7067RMSE#TRPBF's exposed pad?

The exposed pad (pin 13) of the LTC7067RMSE#TRPBF is SGND and must be soldered to a PCB ground plane to achieve the specified θ_JA = 40°C/W. Failure to do so results in significantly higher thermal resistance and potential junction temperature exceedance. The datasheet mandates soldering the entire pad area - not just perimeter - and recommends using multiple thermal vias to inner ground layers. This requirement is critical for maintaining the −40°C to +150°C junction rating in automotive and industrial applications.

Can the LTC7067RMSE#TRPBF drive logic-level MOSFETs effectively?

Yes, the LTC7067RMSE#TRPBF supports gate driver supply voltages from 4V to 14V per channel, making it compatible with logic-level MOSFETs requiring low V_GS turn-on (e.g., 4.5V or 5V). However, drive strength scales with supply voltage: at 4V, pull-up/pull-down resistances increase beyond typical 1.5Ω/0.8Ω values. For optimal performance with logic-level devices, operate G1VCC–G1RTN and G2VCC–G2RTN at ≥5V. The LTC7067RMSE#TRPBF's 0.5V input threshold ensures reliable logic-level compatibility with microcontrollers and FPGAs.