STMicroelectronics MASTERGAN2

Overview

MASTERGAN2 from STMicroelectronics is a 600 V system-in-package integrating an asymmetrical half-bridge gate driver with two enhancement-mode GaN HEMTs - low-side R_DS(on) = 150 mΩ (10 A), high-side R_DS(on) = 225 mΩ (6.5 A) - in a single 9 × 9 mm QFN package. It enables high-frequency, high-efficiency switch-mode power supplies with integrated bootstrap diode, interlocking, UVLO on both sides, and thermal shutdown.

For engineers reviewing the MASTERGAN2 datasheet, MASTERGAN2 pinout, MASTERGAN2 application, or MASTERGAN2 equivalent, this device supports fast design of compact, high-power-density PFC and DC-DC converters where GaN's zero reverse recovery, precise timing match, and 3.3–15 V logic-compatible inputs simplify controller interfacing and layout.

Technical Context

The MASTERGAN2 implements a fully integrated half-bridge driver with independent logic-level inputs (HIN/LIN/SD/OD), internal level-shifting, and matched propagation delays (~46 ns each) to prevent cross-conduction. Its bootstrap architecture uses an integrated high-voltage DMOS diode referenced to OUTb, eliminating external bootstrap diodes for ≤500 kHz operation.

UVLO protection operates independently on VCC (4.2–4.5 V turn-on) and VBO (3.6–4.0 V turn-on), while thermal shutdown latches at 175 °C with 20 °C hysteresis and forces SD/OD low. The device supports industrial temperature range (−40 °C to +125 °C) and features dedicated gate resistors (RONL = 52 Ω, ROFFL = 2 Ω; RONH = 77 Ω, ROFFH = 2 Ω) for controlled switching.

Key Specifications

Pinout & Package

MASTERGAN2 is housed in a thermally enhanced 31-pin QFN package (9 × 9 × 1 mm) with three exposed thermal pads (EP1: GND, EP2: SENSE, EP3: OUT) for optimized heat transfer to PCB copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN half-bridge driver applications.

Compared with MASTERGAN2, GS66508T offers higher voltage headroom but demands full external driver design, while UCC27611 delivers superior timing precision but requires discrete GaN pairing and adds 5+ passive components - making MASTERGAN2 optimal for rapid, space-constrained, high-efficiency designs where integration reduces risk and accelerates time-to-market.

Availability

MASTERGAN2 is available at Aetrix Electronics and suitable for server power supplies, laptop adapters, industrial DC-DC converters, and EV onboard charger auxiliary supplies requiring stable component supply and long-term production continuity.

Supply support for MASTERGAN2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

MASTERGAN2 belongs to ST's MASTERGAN family of system-in-package GaN solutions, designed specifically to accelerate adoption of gallium nitride in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum recommended operating frequency for MASTERGAN2?

MASTERGAN2 is characterized for reliable operation up to 500 kHz with its integrated bootstrap diode. Above this frequency, an external bootstrap diode is recommended to maintain sufficient charge replenishment. Switching performance (100 V/ns slew rate, 70 ns t_on/t_off) supports designs targeting 1 MHz, but thermal and gate drive stability must be validated per layout and heatsinking.

Can MASTERGAN2 drive external GaN FETs instead of its internal ones?

No - MASTERGAN2 integrates fixed, non-bypassable GaN transistors; its gate drivers (GL/GH) are internally connected only to the on-die low-side and high-side GaN HEMTs. It does not provide isolated, configurable gate outputs for driving external devices. For external FET control, standalone drivers like UCC27611 or IRS2092S are appropriate alternatives.

How is thermal shutdown signaled, and can it be reset automatically?

Thermal shutdown pulls the SD/OD pin low (open-drain) and disables both GaN transistors. Recovery requires junction temperature to fall below (175 °C − 20 °C) = 155 °C AND SD/OD pin voltage to rise above 2.7 V (V_ih). No external reset signal is needed - the device resumes normal operation automatically once both conditions are met and valid input transitions occur.

Is the BOOT pin capable of sustaining 600 V during operation?

Yes - the BOOT pin is rated for −0.3 V to 620 V (absolute max), and the recommended operating range extends to 530 V. This allows direct use in 400 V AC-input systems with 1.5× safety margin. The internal bootstrap diode and level-shifter are qualified for continuous 600 V blocking, verified per DS13597 Rev 2.0 electrical characteristics.