Analog Devices Inc./Maxim Integrated MAX8552ETB+T

Overview

MAX8552ETB+T from Maxim Integrated is a high-speed, wide-input single-phase MOSFET driver IC designed for synchronous buck converters. It drives high- and low-side N-MOSFETs with 1.3Ω/0.7Ω DH sourcing/sinking resistance and 1.0Ω/0.5Ω DL sourcing/sinking resistance, supports up to 2MHz switching (TDFN), and delivers <12ns propagation delay with 3000pF load-enabling efficient 25A–30A per-phase CPU core voltage regulation in desktop/server VRMs.

For engineers reviewing the MAX8552ETB+T datasheet, MAX8552ETB+T pinout, MAX8552ETB+T application, or MAX8552ETB+T equivalent, key selection criteria include adaptive + user-programmable dead time control, TTL/CMOS-compatible PWM input, EN-driven shutdown (<0.1µA), and TDFN-10 package thermal performance for high-density multiphase layouts.

Technical Context

The MAX8552ETB+T implements dual N-channel gate drivers with independent high-side (DH) and low-side (DL) outputs, each featuring programmable shoot-through protection via adaptive LX-voltage detection (<2.4V threshold) and external resistor-settable dead-time delay (67.5–112.5ns). Its BiCMOS process enables fast logic-level translation and robust drive capability under 4.5V–6.5V VCC and up to 24V VIN conditions.

It integrates undervoltage lockout (UVLO: 3.0–3.8V hysteresis), bootstrap capacitor management (BST–LX), and separate analog (GND) and power (PGND) ground pins to suppress noise coupling. The functional diagram confirms dedicated delay logic, PWM-to-DH/DL state mapping, and internal current-sinking paths that enforce safe turn-off sequencing before turn-on.

Key Specifications

Pinout & Package

MAX8552ETB+T is housed in a 3mm × 3mm, 10-pin Thin DFN (TDFN) package with exposed paddle (connected to GND), optimized for thermal performance in high-current applications. The package supports 1951mW power dissipation at +70°C with 24.4mW/°C derating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar single-phase MOSFET driver applications.

Compared with MP6610DT-LF-Z and LM5113SD/NOPB, the MAX8552ETB+T uniquely combines adaptive + programmable dead time, 2MHz capability in TDFN, and sub-12ns propagation delay-making it optimal for high-performance, space-constrained CPU/GPU core supplies where timing precision and thermal efficiency are critical.

Availability

MAX8552ETB+T is available at Aetrix Electronics and suitable for desktop VRMs, notebook GPU power stages, and server memory regulators requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for MAX8552ETB+T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power-management ICs for computing, communications, and industrial applications.

The MAX8552 belongs to Maxim's high-frequency power driver product line, engineered specifically for multiphase synchronous buck converters in CPU/GPU core-voltage regulation-emphasizing timing accuracy, thermal efficiency, and shoot-through immunity.

FAQ

What is the maximum switching frequency supported by the MAX8552ETB+T?

The MAX8552ETB+T supports up to 2MHz switching frequency when used in its specified 10-pin TDFN package, enabled by low propagation delay (12ns typ), fast rise/fall times (≤14ns), and superior thermal performance (1951mW at +70°C). This exceeds the 1.2MHz limit of the µMAX variant and is validated for stable operation with 3000pF gate loads.

How does the MAX8552ETB+T prevent shoot-through current in synchronous buck topologies?

The MAX8552ETB+T prevents shoot-through using dual mechanisms: adaptive dead time that monitors LX voltage and delays DH turn-on until LX falls below 2.4V, plus user-programmable delay (67.5–112.5ns) set via an external resistor on the DLY pin. Both features ensure strict break-before-make timing between DL and DH drivers under all load and MOSFET conditions.

What are the key differences between the MAX8552ETB+T and MAX8552EUB+T packages?

The MAX8552ETB+T uses a 3mm × 3mm TDFN package with exposed paddle (GND-connected), offering 2MHz max frequency and 1951mW power dissipation at +70°C. The MAX8552EUB+T uses a 3mm × 4.9mm µMAX package, limited to 1.2MHz and 444.4mW - making the ETB variant essential for high-frequency, high-current applications where thermal headroom and timing precision are critical.

Can the MAX8552ETB+T drive both high-side and low-side N-MOSFETs in a synchronous buck converter?

Yes, the MAX8552ETB+T integrates two independent gate drivers: DH (high-side) swings between LX and BST to fully enhance N-MOSFETs, while DL (low-side) swings between VCC and PGND. DH sourcing/sinking resistance is 1.3Ω/0.7Ω and DL is 1.0Ω/0.5Ω - enabling robust 30A-per-phase operation with matched timing and shoot-through protection.

What is the purpose of the DLY pin on the MAX8552ETB+T, and how is it configured?

Pin 5 (DLY) sets user-programmable dead time between DL turn-off and DH turn-on. Connect a resistor (47kΩ typical) from DLY to GND to achieve 67.5–112.5ns delay; tie DLY to VCC to disable programmable delay and default to adaptive timing only. The delay value is verified in the Typical Operating Characteristics (Figure toc08) and directly impacts MOSFET switching safety margin.