Diodes Incorporated MBR10100CTF-E1

Overview

MBR10100CTF-E1 from Diodes Incorporated is a high-voltage dual Schottky rectifier in TO-220F-3 package, rated for 100 V reverse voltage, 5 A average forward current per diode leg, and 0.85 V max forward voltage at +25°C. It delivers low switching losses and low noise in high-frequency switch-mode power supplies and DC-DC converters.

For engineers reviewing the MBR10100CTF-E1 datasheet, MBR10100CTF-E1 pinout, MBR10100CTF-E1 application, or MBR10100CTF-E1 equivalent, key selection criteria include thermal resistance (4.5 °C/W junction-to-case), surge capability (100 A non-repetitive), and RoHS-compliant green packaging with matte tin annealed terminals.

Technical Context

This dual common-cathode Schottky rectifier integrates two independent 100 V/5 A diode elements sharing a single cathode terminal. Its guard-ring structure enhances ruggedness against transient overvoltage stress, while the low VF enables high-efficiency rectification in medium-voltage, high-frequency topologies.

Designed for operation up to +150°C junction temperature, it supports continuous conduction mode (CCM) and discontinuous conduction mode (DCM) in AC-DC adapters, server PSUs, and industrial power modules - where fast recovery and minimal reverse recovery charge are critical.

Key Specifications

Pinout & Package

MBR10100CTF-E1 uses the TO-220F-3 package: insulated plastic case with metal tab, 3-terminal configuration, and matte tin annealed copper leadframe. The package provides electrical isolation between mounting surface and internal circuitry, supporting direct heatsink attachment without insulating washers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VS-10BQ100-M3/45 and MBR10100CT, MBR10100CTF-E1 uniquely combines TO-220F-3 insulation, 4.5 °C/W thermal resistance, and full RoHS 3 + "Green" certification - making it optimal for safety-critical, thermally constrained, and environmentally regulated industrial power systems.

Availability

MBR10100CTF-E1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and AC-DC adapters requiring stable component supply, long-term lifecycle support, and certified green packaging.

Supply support for MBR10100CTF-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MBR10100C series belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in computing, industrial, and consumer power supplies.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The MBR10100CTF-E1 has a rated operating junction temperature range of –55°C to +150°C. At +150°C, its forward voltage drops to 0.75 V, reducing conduction loss but requiring careful thermal management. With RθJC = 4.5 °C/W, a 50°C heatsink rise above ambient yields ~111°C junction rise - staying within limit only if ambient remains ≤39°C. PCB copper area and airflow must be validated per Diodes' suggested pad layout for TO-220F-3.

Is the TO-220F-3 package electrically isolated, and what is its isolation voltage rating?

Yes, the TO-220F-3 package features an insulated plastic case that electrically isolates the metal tab (drain/collector equivalent) from all internal terminals. While the datasheet does not specify a formal isolation voltage rating, the construction meets UL 94V-0 flammability and supports safe operation at 100 V working voltage with reinforced creepage/clearance. It eliminates need for mica washers in most 100 V-class applications.

How does the guard-ring structure improve reliability in real-world power circuits?

The integrated guard-ring in MBR10100CTF-E1 redistributes electric field intensity at the silicon periphery, preventing localized avalanche breakdown during voltage transients such as MOSFET turn-off spikes or line surges. This extends device lifetime in flyback snubber networks and unregulated input stages, where diodes experience repetitive 120–200 V overshoots - verified by >1000-hour HTOL testing at 125°C and rated VR.

Can MBR10100CTF-E1 replace standard PN-junction rectifiers in existing designs?

Yes - with caveats. Its 100 V VRRM and 5 A IF(AV) match common 1N5408 or UF5408 replacements, but its Schottky nature means zero reverse recovery time and lower VF. However, IR rises significantly above +100°C (6.0 mA at +125°C), so designs with high ambient temperature or poor heatsinking may require layout review to avoid leakage-induced regulation drift in precision feedback paths.