Diodes Incorporated MBR10150CT-E1

Overview

MBR10150CT-E1 from Diodes Incorporated is a high-voltage dual common-cathode Schottky rectifier in TO-220-3 package, rated for 150 V reverse voltage, 5 A per diode leg (10 A total), 0.92 V forward voltage at 5 A/25°C, and 0.1 mA reverse leakage at 25°C. It is designed for output rectification in switch-mode power supplies operating at high frequency with low noise and switching loss.

For engineers reviewing the MBR10150CT-E1 datasheet, MBR10150CT-E1 pinout, MBR10150CT-E1 application, or MBR10150CT-E1 equivalent, key selection criteria include dual-diode thermal coupling in TO-220-3, junction temperature capability up to +175°C, guard-ring stress protection, RoHS-compliant matte tin finish, and validated surge current rating of 100 A (half-wave, 60 Hz).

Technical Context

This device integrates two independent Schottky diodes sharing a common cathode terminal (Pin 2), enabling synchronous or interleaved rectification topologies. Its low VF and fast recovery eliminate minority-carrier storage delay, making it suitable for high-frequency DC-DC converters above 100 kHz.

The TO-220-3 mechanical construction provides direct heatsink mounting via the metal tab (cathode-connected), with thermal resistance RθJC = 3.0°C/W. Guard-ring die passivation ensures stable IR performance under high dv/dt stress (10,000 V/µs) and ESD robustness (>8 kV HBM).

Key Specifications

Pinout & Package

Package: TO-220-3 (2), molded plastic case with isolated metal tab (cathode-connected), RoHS-compliant matte tin finish over copper leadframe, UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VS-MBR10150CT and ON Semi MBR10150CT, the Diodes MBR10150CT-E1 offers superior thermal resistance (3.0°C/W), guaranteed guard-ring protection, and tighter IR control-making it optimal for high-reliability, high-density, and thermally aggressive applications where long-term parametric stability is critical.

Availability

MBR10150CT-E1 is available at Aetrix Electronics and suitable for server power supply rectification, industrial AC-DC adapters, and telecom DC-DC brick designs requiring stable component supply, RoHS compliance, and thermal resilience up to +175°C junction temperature.

Supply support for MBR10150CT-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and communications markets.

The MBR10150CT-E1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion where low VF, fast switching, and thermal robustness are essential.

FAQ

Is MBR10150CT-E1 pin-compatible with TO-220F-3 variants like MBR10150CTF-E1?

No. The MBR10150CT-E1 uses TO-220-3 (2) with an isolated metal tab, while MBR10150CTF-E1 uses TO-220F-3 with a fully insulated plastic body. Pin numbering is identical (A1-K-A2), but mechanical mounting, thermal path, and creepage/clearance differ significantly-direct substitution requires PCB and heatsink redesign.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF(AV) = 5 A per leg at TC = +142°C. For reliable long-term operation, Diodes recommends limiting TC to ≤ +135°C to maintain ≥2× lifetime margin. This corresponds to ≤ +165°C junction temperature assuming RθJC = 3.0°C/W and typical thermal interface resistance.

Does MBR10150CT-E1 support parallel operation of both diode legs on a single output rail?

Yes. The common-cathode configuration (Pin 2) allows both anodes (Pins 1 and 3) to be connected to separate transformer secondaries or interleaved phases, feeding a shared output bus. Layout must ensure matched thermal and electrical paths to avoid current imbalance exceeding ±10%.

How does the guard-ring structure improve reliability in high-dv/dt applications?

The guard-ring is a doped region surrounding the active junction edge that redistributes electric field gradients during rapid voltage transients. In the MBR10150CT-E1, it prevents localized avalanche breakdown at the silicon periphery, enabling stable operation at dv/dt = 10,000 V/µs-critical in hard-switched PFC and LLC resonant converters.