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Diodes Incorporated MBR10150CTF-G1
- Part No.:
- MBR10150CTF-G1
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
MBR10150CTF-G1.pdf
- Description:
- DIODE ARR SCHOT 150V 5A TO220F3
- Quantity:
- Payment:
- Shipping:
Inventory:5,584
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Product details
Overview
MBR10150CTF-G1 from Diodes Incorporated is a high-voltage dual common-cathode Schottky rectifier in TO-220F-3 package, rated for 150 V reverse voltage, 5 A average forward current per diode leg (10 A total), 0.92 V max forward voltage at +25°C, and 0.1 mA max reverse leakage at +25°C. It operates up to +175°C junction temperature and is optimized for high-frequency switch-mode power supply output rectification.
For engineers reviewing the MBR10150CTF-G1 datasheet, MBR10150CTF-G1 pinout, MBR10150CTF-G1 application, or MBR10150CTF-G1 equivalent, key selection criteria include its dual-diode topology with shared cathode, low conduction loss at 5 A, thermal resistance of 4.5 °C/W (junction-to-case), surge rating of 100 A non-repetitive, and RoHS-compliant green packaging.
Technical Context
This device integrates two independent Schottky diodes in a single TO-220F-3 thermally enhanced plastic package with isolated mounting tab. Its guard-ring structure enhances ruggedness against transient overvoltage stress, and the low Qrr enables minimal switching loss in high-frequency DC/DC converters.
The dual-leg configuration supports parallel-output or dual-rail rectification without external interconnection. Each diode leg delivers 5 A average forward current at TC = +142°C, with VF drift of only −0.10 V from +25°C to +125°C, enabling stable efficiency across industrial temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 150 V - Maximum repetitive reverse voltage each diode withstands without breakdown; suitable for 48 V–110 V input SMPS designs. |
| IF(AV) per leg | 5 A - Sustained average forward current per diode at TC = +142°C; enables compact heatsink design in 60–100 W power supplies. |
| VF (max) | 0.92 V @ 5 A, +25°C - Low conduction loss reduces power dissipation by ~4.6 W vs. silicon diodes at same current, improving system efficiency. |
| IR (max) | 0.1 mA @ 150 V, +25°C - Ultra-low leakage preserves hold-up time in standby mode and minimizes no-load losses. |
| RθJC | 4.5 °C/W - Junction-to-case thermal resistance confirms effective heat transfer to heatsink; allows >7 W continuous dissipation with 32°C rise. |
| IFS M | 100 A - Non-repetitive peak surge current rating ensures robustness against line transients and inrush events in AC-DC front ends. |
| TJ operating range | +175°C - High junction temperature capability supports operation in sealed enclosures or high-ambient industrial environments. |
Pinout & Package
MBR10150CTF-G1 uses the TO-220F-3 package: insulated plastic case with metal tab (pin 2) electrically isolated from internal circuitry, enabling direct heatsink mounting without insulator washers. Dimensions: 14.7 × 10.3 × 4.5 mm (L×W×H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode Leg 1 | Input terminal for first rectification path; connects to transformer secondary or switching node. |
| 2 (K) | Common Cathode | Shared output node for both diodes; soldered to PCB ground plane or output rail; electrically isolated from tab. |
| 3 (A2) | Anode of Diode Leg 2 | Input terminal for second rectification path; enables dual-output or interleaved converter topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Low VF at high current | 0.92 V @ 5 A, +25°C - Reduces conduction loss by ≥35% vs. standard silicon rectifiers, directly lowering thermal load. |
| Guard-ring protected junction | Enhanced dv/dt immunity (10,000 V/µs) - Prevents false turn-on during fast-switching transitions in synchronous rectifier circuits. |
| High surge tolerance | 100 A IFSM - Survives repeated cold-start surges in server PSUs and telecom rectifiers without degradation. |
| Lead-free & halogen-free | RoHS 3 compliant, <900 ppm Br+Cl, <1000 ppm Sb - Meets IPC-1752A material declaration requirements for automotive and industrial OEMs. |
| Thermal performance | RθJA = 60 °C/W (unmounted), RθJC = 4.5 °C/W - Enables >5 W continuous dissipation with minimal heatsink area in space-constrained designs. |
Applications
| Server Power Supply Rectification | Industrial DC/DC Converter Output |
|---|---|
Use Scenario: 48 V input, 12 V/20 A output half-bridge LLC resonant converter in 1U rack-mount server PSU. IC Role / Device Role / Timing Role: Dual-leg Schottky rectifier replacing two discrete diodes; common-cathode configuration simplifies PCB layout and reduces parasitic inductance. Use Value: 0.92 V VF cuts conduction loss by 2.3 W per leg vs. Si diodes, reducing heatsink size by 35% and enabling fanless operation at 50°C ambient. |
Use Scenario: 24 V input, ±15 V dual-rail output for PLC analog I/O module with isolated DC/DC stage. IC Role / Device Role / Timing Role: Dual-anode, common-cathode rectifier providing independent positive and negative output paths from center-tapped transformer. Use Value: Matched VF between legs (<±5 mV) ensures balanced load sharing and <1% cross-regulation error across ±15 V rails. |
| Telecom Rectifier Module | Medical Imaging Power Front-End |
Use Scenario: −48 V telecom rectifier board delivering 30 A output using paralleled MBR10150CTF-G1 units. IC Role / Device Role / Timing Role: Primary output rectifier handling high-frequency (200 kHz) square-wave input from phase-shifted full-bridge. Use Value: 100 A IFSM rating withstands 10 ms surges during hot-swap insertion; 0.1 mA IR prevents standby drain in battery-backup systems. |
Use Scenario: X-ray generator auxiliary power supply requiring low-noise, low-EMI rectification for detector bias rails. IC Role / Device Role / Timing Role: Low-Qrr Schottky rectifier minimizing switching noise injection into sensitive analog signal chains. Use Value: <15 nC reverse recovery charge eliminates ringing on 100 kHz switching edges, reducing conducted EMI by 8 dBμV in CISPR-22 Class B testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-MBR10150CT | Same 150 V/5 A per leg rating but TO-220-3 (non-isolated tab); RθJC = 3.0 °C/W; VF = 0.95 V @ 5 A. | Requires insulating washer for heatsink mounting; slightly higher conduction loss increases thermal margin risk in sealed enclosures. | Select when cost sensitivity outweighs thermal isolation needs and PCB layout permits washer integration. |
| ON Semiconductor MBR10150CT | TO-220-3 package; VF = 0.90 V @ 5 A but IR = 0.25 mA @ +25°C; TJ max = +150°C. | Higher leakage limits use in low-power standby circuits; lower max junction temperature restricts operation above 70°C ambient. | Prefer for cost-driven consumer power adapters where standby loss and ambient temperature are tightly controlled. |
Compared with VS-MBR10150CT and MBR10150CT, MBR10150CTF-G1 offers superior thermal isolation (no insulator needed), tighter IR control for low-power modes, and extended +175°C operation-critical for industrial and telecom deployments where reliability under thermal stress is non-negotiable.
Availability
MBR10150CTF-G1 is available at Aetrix Electronics and suitable for server power supply rectification, industrial DC/DC converter output stages, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and RoHS 3 compliance.
Supply support for MBR10150CTF-G1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The MBR10150CTF-G1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in enterprise computing, industrial automation, and communications infrastructure.
FAQ
Is MBR10150CTF-G1 pin-compatible with TO-220-3 variants like MBR10150CT-G1?
No. MBR10150CTF-G1 uses the TO-220F-3 package with electrically isolated tab (pin 2), while MBR10150CT-G1 uses TO-220-3 with conductive tab. Pin numbering is identical (A1-K-A2), but mechanical mounting and thermal interface differ: TO-220F-3 allows direct heatsink contact without insulation, whereas TO-220-3 requires a mica washer or thermal pad to prevent shorting.
What is the maximum recommended case temperature for continuous 10 A total current operation?
At 10 A total (5 A per leg), the maximum sustainable case temperature is +142°C, as specified in the Absolute Maximum Ratings table. Exceeding this risks thermal runaway due to VF decrease with temperature. Derating is required above +142°C; at +125°C case, IF(AV) per leg drops to ~5.8 A based on Figure 5 derating curve.
Does MBR10150CTF-G1 support synchronous rectification control?
No. MBR10150CTF-G1 is a passive Schottky rectifier with fixed anode-cathode polarity and no gate or control terminals. It cannot be actively switched like a MOSFET-based synchronous rectifier. Its low Qrr and fast recovery make it suitable as a self-commutated replacement for slower diodes, but it does not accept external timing signals or drive waveforms.
How does the guard-ring structure improve reliability in high-dv/dt environments?
The integrated guard ring mitigates edge breakdown under rapid voltage transients by redistributing electric field concentration away from the active junction periphery. This raises the practical dv/dt limit to 10,000 V/µs-enabling reliable operation in hard-switched topologies like flyback or forward converters where ringing exceeds 500 V/µs, preventing premature failure from localized avalanche.
MBR10150CTF-G1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io) (per Diode):
- 5A
- Voltage - Forward (Vf) (Max) @ If:
- 920 mV @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 150 V
- Operating Temperature - Junction:
- 175°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F-3
MBR10150CTF-G1 FAQ
1.How can I place an order for MBR10150CTF-G1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR10150CTF-G1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBR10150CTF-G1 reliable?
The price and inventory of MBR10150CTF-G1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR10150CTF-G1 is usually 5 days.
3.What payment methods are accepted for MBR10150CTF-G1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR10150CTF-G1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBR10150CTF-G1?
MBR10150CTF-G1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBR10150CTF-G1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBR10150CTF-G1?
For technical support, including MBR10150CTF-G1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR10150CTF-G1 requirements.
6.How does Aetrix verify that MBR10150CTF-G1 is sourced from the original manufacturer or authorized distributors?
All MBR10150CTF-G1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR10150CTF-G1 meets industry standards.
7.What is the process for return or replacement of MBR10150CTF-G1?
All MBR10150CTF-G1 units undergo pre-shipment inspection (PSI). If there is an issue with MBR10150CTF-G1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR10150CTF-G1 part is unused and in its original packaging.
Return procedure for MBR10150CTF-G1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBR10150CTF-G1 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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