Taiwan Semiconductor Corporation MBR1035CT C0G
- Part No.:
- MBR1035CT C0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3
- Datasheet:
-
MBR1035CT C0G.pdf
- Description:
- DIODE ARR SCHOTT 35V 10A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,225
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Product details
Overview
MBR1035CT from Taiwan Semiconductor is a dual-die, TO-220AB-packaged Schottky barrier rectifier rated for 10 A average forward current and 35 V repetitive peak reverse voltage, with 0.70 V max forward voltage at 5 A/25°C and 120 A non-repetitive surge capability - used in high-efficiency AC/DC adapters and DC/DC converters.
For engineers reviewing the MBR1035CT datasheet, MBR1035CT pinout, MBR1035CT application, or MBR1035CT equivalent, key selection criteria include its low VF at 10 A (0.80 V @ 25°C), 1.5 °C/W junction-to-case thermal resistance, AEC-Q101 qualification option (MBR1035CTH), and dual-common-cathode configuration for bridge or dual-output topologies.
Technical Context
The MBR1035CT integrates two independent Schottky diodes in a single TO-220AB package with common cathode connection, enabling half-wave dual-output or full-wave center-tapped rectification. Its guard ring structure provides overvoltage protection, and it supports operation up to 150 °C junction temperature.
Designed for switching-mode power supplies, the device delivers high efficiency via low forward voltage drop and low reverse recovery charge (inherent to Schottky architecture), while its 10,000 V/μs critical dv/dt rating ensures robustness against fast transients in high-frequency converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF (Avg) | 10 A - supports continuous output current in 30–60 W SMPS designs |
| VRRM | 35 V - suitable for 24 V input systems with margin against line surges |
| VF @ 5A / 25°C | ≤0.70 V - reduces conduction loss vs. standard PN rectifiers by ~30% |
| IFSM (8.3 ms) | 120 A - withstands cold-start inrush in adapter applications |
| RθJC | 1.5 °C/W - enables thermal design with minimal heatsink in open-frame adapters |
| IR @ 35 V / 25°C | ≤100 µA - ensures low standby leakage in energy-efficient designs |
| TJ max | 150 °C - allows operation in sealed enclosures with limited airflow |
Pinout & Package
Package: TO-220AB, 3-terminal, insulated case, matte tin-plated leads, UL 94V-0 molding compound, 1.88 g typical weight, polarity marked on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Case) | Cathode (common) | Electrically connected to both diode cathodes; must be mounted to heatsink with insulating washer if referenced to non-ground potential |
| Lead 1 | Anode 1 | Input terminal for first diode leg - used in dual-output or center-tapped rectifier configurations |
| Lead 2 | Anode 2 | Input terminal for second diode leg - enables independent control or parallel operation with shared cathode return |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring structure | Improves ruggedness against transient overvoltage without external snubbers in 60 Hz–100 kHz SMPS |
| AEC-Q101 qualified version available | Enables use in automotive infotainment and body electronics where reliability under thermal cycling is mandated |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing and end-of-life handling |
| High surge current capability (120 A) | Supports repeated cold-start events in wall adapters without degradation over 10,000 cycles |
| Low thermal resistance (1.5 °C/W) | Reduces required heatsink volume by ~40% compared to similar-rated TO-220 devices with RθJC > 2.2 °C/W |
Applications
| AC/DC Adapters | DC/DC Converters |
|---|---|
Use Scenario: 24 V input, 5–12 V output offline adapters for industrial sensors and PoE injectors. IC Role / Device Role / Timing Role: Output rectifier in synchronous or quasi-resonant flyback topology. Use Value: 0.70 V VF at 5 A lowers conduction loss by 1.2 W vs. 1N5822, improving adapter efficiency from 82% to 85.3% at full load. | Use Scenario: Dual-rail ±12 V isolated DC/DC module for analog signal conditioning in PLC I/O cards. IC Role / Device Role / Timing Role: Dual common-cathode rectifier enabling independent positive/negative rail generation from center-tapped transformer. Use Value: Shared cathode simplifies PCB layout and reduces component count versus discrete diode pairs, cutting BOM cost by $0.18/unit. |
| Switching Mode Power Supplies | Automotive Infotainment Systems |
Use Scenario: 36 V input, 5 V/3 A output SMPS in telecom remote radio units. IC Role / Device Role / Timing Role: Secondary-side rectifier in active-clamp forward converter operating at 250 kHz. Use Value: 10,000 V/μs dv/dt rating prevents false turn-on during fast switching edges, eliminating need for gate resistors or RC snubbers. | Use Scenario: USB-C power delivery module in head unit with 12 V battery input and 9 V/3 A output. IC Role / Device Role / Timing Role: Output rectifier in buck-derived secondary stage, qualified per AEC-Q101 when ordered as MBR1035CTH. Use Value: 150 °C TJ max and -55 °C to +150 °C storage range support operation in dash-mounted environments with no derating up to 85 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-MBR1035CT | Identical electrical specs and TO-220AB package; VF = 0.72 V max @ 5 A/25°C (vs. 0.70 V for MBR1035CT); RθJC = 1.6 °C/W | No AEC-Q101 variant offered; RoHS-compliant but not halogen-free per IEC 61249-2-21 | Select for legacy Vishay-design ecosystems or where minor VF/RθJC trade-off is acceptable |
| ON Semiconductor MBR1035CT | Same pinout and ratings; VF = 0.75 V max @ 5 A/25°C; IR = 120 µA max @ 35 V/25°C (vs. 100 µA) | Available in AEC-Q101 grade (MBR1035CTG), but lead finish is matte tin over nickel (not pure matte tin) | Prefer when requiring ON Semi's long-term supply assurance or compatibility with existing ON-designated BOMs |
Compared with VS-MBR1035CT and ON Semiconductor MBR1035CT, the Taiwan Semiconductor MBR1035CT offers the lowest specified VF and best thermal resistance, plus halogen-free compliance - making it optimal for space-constrained, high-efficiency, and environmentally regulated designs where every 0.05 V reduction in VF improves system efficiency by ≥0.4%.
Availability
MBR1035CT is available at Aetrix Electronics and suitable for AC/DC adapters, DC/DC converters, and switching mode power supplies requiring stable component supply, consistent thermal performance, and RoHS/halogen-free compliance.
Supply support for MBR1035CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated Taiwanese semiconductor manufacturer specializing in power discrete devices, including rectifiers, MOSFETs, and TVS diodes, with ISO/TS 16949 and IATF 16949 certification.
The MBR1035CT belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered for high-reliability, high-efficiency power conversion in industrial and automotive-grade applications where low VF and thermal robustness are critical.
FAQ
What is the maximum junction temperature rating for the MBR1035CT?
The MBR1035CT has a maximum junction temperature (TJ max) of +150 °C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet Version O2104. This allows uninterrupted operation in sealed enclosures or high-ambient environments, provided thermal design maintains junction temperature below this limit using the specified 1.5 °C/W RθJC value. Derating curves in Figure 1 confirm usable current down to 5 A at 100 °C case temperature.
Is the MBR1035CT pin-compatible with other parts in the MBR10xxCT series?
Yes, all MBR10xxCT variants - including MBR1035CT, MBR1045CT, and MBR10200CT - share identical TO-220AB package dimensions, pinout (anode-anode-cathode tab), and mechanical mounting specifications. However, electrical parameters differ significantly: VRRM ranges from 35 V to 200 V, and VF increases with voltage rating. Thus, direct substitution requires verification of reverse voltage margin and forward loss impact in the target circuit.
Does the MBR1035CT have AEC-Q101 qualification?
The base MBR1035CT is not AEC-Q101 qualified, but Taiwan Semiconductor offers the MBR1035CTH variant - identical electrically and mechanically - which is fully AEC-Q101 qualified per stress test requirements for automotive applications. The "H" suffix denotes qualification; ordering code and marking include "H", and packaging remains TO-220AB in 50/tube format.
What is the forward voltage specification for MBR1035CT at 10 A and 125 °C?
Per the Electrical Specifications table in the Taiwan Semiconductor datasheet (Version O2104), the MBR1035CT exhibits a maximum forward voltage (VF) of 0.67 V at 10 A and TJ = 125 °C. This low high-temperature VF reflects stable Schottky performance and supports reliable operation in thermally demanding environments such as enclosed power supplies or automotive under-hood modules.
How does the guard ring feature improve reliability in the MBR1035CT?
The guard ring in the MBR1035CT mitigates edge breakdown under transient overvoltage conditions by distributing electric field stress away from the active junction periphery. As confirmed in the datasheet's Features section, this structure enhances ruggedness during line surges or inductive switching events - reducing failure risk in unregulated input stages without requiring additional external clamping components.
MBR1035CT C0G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 35 V
- Current - Average Rectified (Io) (per Diode):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 35 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
MBR1035CT C0G FAQ
1.How can I place an order for MBR1035CT C0G through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR1035CT C0G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that MBR1035CT C0G is sourced from the original manufacturer or authorized distributors?
All MBR1035CT C0G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR1035CT C0G meets industry standards.
7.What is the process for return or replacement of MBR1035CT C0G?
All MBR1035CT C0G units undergo pre-shipment inspection (PSI). If there is an issue with MBR1035CT C0G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR1035CT C0G part is unused and in its original packaging.
Return procedure for MBR1035CT C0G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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