Taiwan Semiconductor Corporation MBR1050

Overview

MBR1050 from Taiwan Semiconductor is a 10A, 50V Schottky barrier rectifier in TO-220AC package, featuring low forward voltage (0.80 V at 10 A, 25°C), high surge current capability (150 A), and junction-to-case thermal resistance of 3°C/W. It serves as a primary output rectifier in high-efficiency DC-DC converters and offline SMPS.

For engineers reviewing the MBR1050 datasheet, MBR1050 pinout, MBR1050 application, or MBR1050 equivalent, key selection criteria include its 50 V repetitive peak reverse voltage, 10 mA reverse leakage at 125°C, AEC-Q101 qualification option (MBR1050H), and compatibility with standard TO-220AC heatsink mounting.

Technical Context

The MBR1050 uses a single-die Schottky structure optimized for low conduction loss and fast switching, with no recovery time and negligible minority-carrier storage. Its guard ring design enhances ruggedness against transient overvoltage events common in inductive load switching.

Thermally, it supports continuous operation up to 150°C junction temperature and delivers stable performance across -55°C to +175°C storage range. The matte tin-plated leads meet J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Pinout & Package

Package: TO-220AC - Three-terminal, through-hole plastic package with isolated tab (cathode-connected tab), UL 94V-0 rated molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBR1050, VS-MBR1050CT offers dual-diode integration but demands layout adaptation, while MBR1050CT trades off AEC-Q101 compliance and marginally higher VF for broader distributor availability and legacy design reuse.

Availability

MBR1050 is available at Aetrix Electronics and suitable for switching mode power supplies, laptop adapters, and industrial DC-DC converters requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for MBR1050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The MBR10xx series was developed specifically for high-efficiency, high-reliability rectification in space-constrained power supplies, emphasizing low VF, rugged surge handling, and automotive-grade variants for mission-critical systems.

FAQ

What is the maximum junction temperature rating for MBR1050?

The MBR1050 has a maximum junction temperature (TJ max) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This allows sustained operation in high-ambient environments such as enclosed power supplies or motor drive control units. Thermal design must ensure that actual junction temperature remains below this limit using the specified RθJC of 3°C/W and appropriate heatsinking. MBR1050 must not be operated beyond 150°C junction temperature under any condition.

Is MBR1050 RoHS and halogen-free compliant?

Yes, MBR1050 is RoHS compliant and halogen-free in accordance with IEC 61249-2-21, as confirmed in the "Features" section of the Taiwan Semiconductor datasheet. The molding compound contains no brominated flame retardants or chlorine-based additives, and lead content is below 1000 ppm. This compliance applies to all standard MBR1050 variants, including non-AEC-Q101 versions, and supports environmentally regulated end markets such as EU consumer electronics and industrial automation.

Does MBR1050 have an AEC-Q101 qualified version?

Yes, the AEC-Q101 qualified version is designated MBR1050H and shares identical electrical and thermal specifications with the standard MBR1050, including 50 V VRRM, 10 A IF, and 0.80 V VF at 10 A and 25°C. The "H" suffix indicates full qualification per AEC-Q101 stress test requirements for automotive discrete semiconductors. MBR1050H is intended for under-hood and chassis-mounted power conversion modules where reliability under temperature cycling, mechanical shock, and humidity is mandatory.

What is the reverse leakage current of MBR1050 at elevated temperature?

At rated reverse voltage (50 V) and junction temperature of 125°C, the MBR1050 exhibits a maximum reverse leakage current (IR) of 10 mA, as specified in the Electrical Specifications table. This value is critical for standby power budgeting in energy-efficient designs. At 25°C and 50 V, IR is limited to 100 µA. The increase with temperature reflects inherent Schottky barrier physics and must be accounted for in thermal-aware reliability analysis.

What is the mounting torque specification for MBR1050's TO-220AC package?

The recommended maximum mounting torque for the MBR1050 in TO-220AC package is 0.56 N·m, as stated in the Mechanical Data section of the Taiwan Semiconductor datasheet. Exceeding this torque risks cracking the plastic body or damaging internal wire bonds. Mounting hardware must use flat washers and controlled torque drivers; the metal tab serves as both thermal path and cathode connection, so electrical isolation (e.g., mica washer + thermal grease) is required unless the heatsink is referenced to cathode potential. MBR1050's weight is approximately 1.88 g.