Taiwan Semiconductor Corporation MBR1090 C0G

Overview

MBR1090 C0G from Taiwan Semiconductor is a 10A, 90V Schottky barrier rectifier in TO-220AC package, featuring low forward voltage (0.85 V max at 10 A, 25°C), high surge current capability (150 A), and junction temperature rating up to +150°C. It serves as a primary output rectifier in high-efficiency DC/DC converters and offline SMPS.

For engineers reviewing the MBR1090 C0G datasheet, MBR1090 C0G pinout, MBR1090 C0G application, or MBR1090 C0G equivalent, key selection criteria include verified V_RRM = 90 V, R_θJC = 3°C/W thermal resistance, TJ = –55°C to +150°C operating range, and AEC-Q101 qualification availability (MBR1090H variant).

Technical Context

This single-die Schottky rectifier uses a guard ring structure for overvoltage protection and achieves high efficiency via low conduction loss. Its 150 A IFSM rating supports robust transient handling in switching power supplies with repetitive 8.3 ms half-sine surges.

The device operates across –55°C to +150°C junction temperature range and exhibits 6 mA reverse leakage at rated VR and 125°C - critical for thermal stability in compact, high-power-density designs.

Key Specifications

Pinout & Package

Package: TO-220AC - Three-terminal, through-hole plastic package with isolated tab (cathode-connected tab), UL 94V-0 molding compound, matte tin-plated leads, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBR1090 C0G, VS-MBR1090CT offers dual-diode integration but requires PCB redesign, while MBR1090CT trades 0.5°C/W higher thermal resistance for comparable electrical performance - both require evaluation of mechanical fit and thermal interface design.

Availability

MBR1090 C0G is available at Aetrix Electronics and suitable for server power supplies, industrial DC/DC converters, automotive onboard chargers, and telecom AC/DC front-ends requiring stable component supply and long-lifecycle support.

Supply support for MBR1090 C0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The MBR10x series targets high-efficiency power conversion systems where low forward voltage, high surge tolerance, and extended temperature operation are essential - especially in space-constrained, thermally demanding applications.

FAQ

What is the maximum junction temperature rating for MBR1090 C0G?

The MBR1090 C0G has a maximum junction temperature (T_J) rating of +150°C, with an operational range from –55°C to +150°C. This allows reliable use in high-ambient environments such as enclosed power modules or under-hood automotive locations. The device's thermal resistance (R_θJC = 3°C/W) supports effective heat transfer to an external heatsink, ensuring MBR1090 C0G remains within safe operating limits even at full 10 A load.

Is MBR1090 C0G AEC-Q101 qualified?

The standard MBR1090 C0G is not AEC-Q101 qualified; however, the MBR1090H variant - identical in all electrical and thermal specifications - is fully AEC-Q101 qualified for automotive applications. Customers requiring automotive-grade validation must specify MBR1090H. The "H" suffix denotes qualification per AEC-Q101 stress test conditions including temperature cycling, HTRB, and ESD testing.

What is the forward voltage of MBR1090 C0G at 10 A and 125°C?

At 10 A forward current and 125°C junction temperature, the MBR1090 C0G exhibits a maximum forward voltage (V_F) of 0.71 V. This value is confirmed in the Electrical Specifications table of the official Taiwan Semiconductor datasheet (Version M2103). The lower V_F at elevated temperature reflects the inherent negative temperature coefficient of Schottky diodes, supporting stable performance during thermal transients in MBR1090 C0G-based designs.

Does MBR1090 C0G have a guard ring structure?

Yes, the MBR1090 C0G incorporates a guard ring structure to enhance edge termination robustness and prevent premature avalanche breakdown under reverse bias. This feature is explicitly listed under FEATURES in the Taiwan Semiconductor datasheet and contributes to the device's ability to sustain its full 90 V V_RRM rating across temperature and process variations. The guard ring improves long-term reliability in applications subject to voltage transients or partial discharge stress.

What is the reverse leakage current of MBR1090 C0G at 90 V and 125°C?

At rated reverse voltage (90 V) and 125°C junction temperature, the MBR1090 C0G exhibits a maximum reverse leakage current (I_R) of 6 mA, as specified in the Electrical Specifications table. This value is measured using a 30 ms pulse test (PW = 30 ms) and represents worst-case leakage under thermal stress. Designers should account for this leakage in low-power standby circuits or precision sensing paths where microamp-level currents matter.