Taiwan Semiconductor Corporation MBR10H150CT

Overview

MBR10H150CT from Taiwan Semiconductor is a 10A, 150V dual-die Schottky barrier rectifier in TO-220AB package, featuring low forward voltage (0.88 V @ 5A, 25°C), 120A surge capability, and AEC-Q101 qualification for automotive-grade reliability. It serves as a high-efficiency output rectifier in DC–DC converters and switching power supplies where thermal robustness and fast recovery are critical.

For engineers reviewing the MBR10H150CT datasheet, MBR10H150CT pinout, MBR10H150CT application, or MBR10H150CT equivalent, key selection factors include its 150V repetitive peak reverse voltage, junction-to-case thermal resistance of 1.5°C/W, dual common-cathode configuration, and compliance with RoHS and halogen-free standards per IEC 61249-2-21.

Technical Context

This dual-die Schottky rectifier integrates two independent 10A diodes in a common-cathode TO-220AB package, enabling synchronous or interleaved rectification topologies. Its guard ring structure provides overvoltage protection, while the 10,000 V/μs dv/dt rating supports stable operation in high-speed switching environments.

The device operates across –55°C to +175°C junction temperature range and delivers 0.85–0.97 V forward voltage depending on current and temperature-critical for minimizing conduction loss in high-frequency SMPS designs. Reverse leakage remains ≤1 mA at 125°C under rated VR.

Key Specifications

Pinout & Package

Package: TO-220AB, three-terminal, common-cathode configuration. Case is electrically connected to cathode terminal. Matte tin-plated leads meet J-STD-002 solderability requirements. Mounting torque ≤ 0.56 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-MBR10150CT and MBR10150CTG, the MBR10H150CT offers superior thermal performance (1.5°C/W), guaranteed AEC-Q101 compliance, and tighter V_F specification-making it the preferred choice for thermally constrained or automotive-qualified designs requiring long-term reliability.

Availability

MBR10H150CT is available at Aetrix Electronics and suitable for switching mode power supplies, automotive DC–DC converters, and industrial adapters requiring stable component supply, extended temperature operation, and automotive-grade qualification.

Supply support for MBR10H150CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and automotive-qualified components.

The MBR10H150CT belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial systems where thermal resilience and surge robustness are mandatory.

FAQ

What is the maximum junction temperature rating for the MBR10H150CT?

The MBR10H150CT has a maximum junction temperature (T_J) rating of +175°C, verified per absolute maximum ratings table in the official Taiwan Semiconductor datasheet (Version J2104). This allows uninterrupted 10A operation in high-ambient environments such as under-hood automotive applications or sealed industrial enclosures. Thermal design must ensure case temperature stays within limits using the specified 1.5°C/W R_θJC.

Is the MBR10H150CT pin-compatible with standard TO-220AB dual-diode rectifiers?

Yes-the MBR10H150CT uses industry-standard TO-220AB mechanical outline and pin assignment: Pin 1 = Anode 1, Pin 2 = Common Cathode (tab-connected), Pin 3 = Anode 2. It matches footprint and mounting dimensions of equivalents like VS-MBR10150CT and MBR10150CTG, enabling direct PCB replacement where thermal and qualification requirements align.

Does the MBR10H150CT have AEC-Q101 qualification, and what does that cover?

Yes-the "H" suffix in MBR10H150CT explicitly denotes AEC-Q101 qualification per Taiwan Semiconductor's ordering information. This certification covers stress testing for temperature cycling, humidity bias, mechanical shock, and high-temperature operating life-validating suitability for automotive power electronics including engine control, lighting, and ADAS subsystems.

What is the forward voltage specification for the MBR10H150CT at 10A and 125°C?

Per the Electrical Specifications table (Version J2104), the MBR10H150CT exhibits a maximum forward voltage (V_F) of 0.85 V at I_F = 10A and T_J = 125°C. This low, temperature-stable V_F reduces conduction loss and thermal runaway risk in high-load, high-temperature applications such as automotive DC–DC converters.

How does the guard ring feature improve reliability in the MBR10H150CT?

The integrated guard ring in the MBR10H150CT enhances edge termination robustness, suppressing premature avalanche breakdown during voltage transients. As confirmed in the Features section, this structure increases overvoltage withstand capability-particularly beneficial in unregulated input stages or systems subject to load dump events in automotive 12V networks.