Diodes Incorporated MBR20100CS2TR-G1

Overview

MBR20100CS2TR-G1 from Diodes Incorporated is a high-voltage dual Schottky rectifier in TO-263-2 surface-mount package, rated for 100 V reverse voltage, 10 A average forward current per diode leg (20 A total), and 0.85 V max forward voltage at +25°C. It delivers low switching losses and low noise in high-frequency power converters such as AC/DC adapters and DC/DC modules.

For engineers reviewing the MBR20100CS2TR-G1 datasheet, MBR20100CS2TR-G1 pinout, MBR20100CS2TR-G1 application, or MBR20100CS2TR-G1 equivalent, key selection criteria include thermal resistance (2.0 °C/W junction-to-case), surge capability (150 A non-repetitive peak), RoHS-compliant "Green" packaging, and dual-diode configuration for synchronous rectification or dual-output supplies.

Technical Context

This dual common-cathode Schottky rectifier integrates two independent 100 V / 10 A diode elements sharing a single cathode terminal. Its low VF and absence of minority-carrier storage enable zero-recovery switching-critical for >100 kHz SMPS topologies like LLC resonant and active clamp flyback.

The device operates up to +150°C junction temperature and features guard-ring protection against edge breakdown under high dv/dt stress (10,000 V/µs). Thermal performance is optimized for TO-263-2 mounting with 2.0 °C/W RθJC and 50 °C/W RθJA when using recommended PCB copper area.

Key Specifications

Pinout & Package

Package: TO-263-2 (D²PAK), surface-mount, lead-free, halogen-free "Green" molded plastic case with matte tin-plated copper leadframe. Weight: ~1.9 g. UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VS-20BQ100-M3/45, MBR20100CS2TR-G1 offers tighter thermal resistance for space-constrained layouts; versus MBR20100CT, it enables automated assembly and higher surge resilience-making it optimal for volume-manufactured, thermally demanding power supplies.

Availability

MBR20100CS2TR-G1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC/DC converters, telecom rectifier modules, and LED driver secondary rectification requiring stable component supply, RoHS-compliant "Green" packaging, and high-reliability Schottky performance.

Supply support for MBR20100CS2TR-G1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and communications markets.

The MBR20100C series belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion in SMPS, PFC, and DC/DC applications where low VF and fast switching are critical.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The MBR20100CS2TR-G1 has a maximum junction temperature of +150°C. This allows operation in sealed or high-ambient environments without immediate derating, provided the thermal path from junction to ambient remains within limits. With RθJC = 2.0 °C/W and RθJA = 50 °C/W (on recommended PCB), a 10 A/leg load generates ~8.5 W dissipation, requiring ≥4 cm² of 2-oz copper to maintain TJ ≤ +135°C at +70°C ambient.

Is this part suitable for synchronous rectification replacement in existing designs?

Yes-its dual common-cathode configuration and low VF make it suitable for replacing discrete Schottky pairs in synchronous rectifier circuits. However, unlike active MOSFET-based synchronous rectifiers, it lacks gate drive control; it functions as a passive, self-commutating rectifier. Layout must accommodate its TO-263-2 footprint and ensure adequate copper pour for thermal management.

How does the guard-ring structure improve reliability in high-dv/dt applications?

The integrated guard ring mitigates electric field crowding at the silicon periphery, preventing premature avalanche breakdown during rapid voltage transitions. With a specified dv/dt rating of 10,000 V/µs, it maintains stable reverse blocking in hard-switched topologies like active clamp forward converters-reducing failure risk from transient overstress and extending service life in noisy industrial environments.

What are the soldering profile requirements for the TO-263-2 package?

The TO-263-2 package uses matte tin annealed over copper leadframe and is rated for standard Pb-free reflow per JEDEC J-STD-020. Peak temperature must not exceed 260°C for ≤10 seconds; preheat ramp rate ≤3°C/s; time above 217°C must be 60–150 seconds. Avoid thermal shock during wave soldering-use selective soldering or hand-soldering with temperature-controlled irons capped at 350°C for <3 seconds contact time.