Diodes Incorporated MBR20100CT-G1
- Part No.:
- MBR20100CT-G1
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- TO-220-3
- Datasheet:
-
MBR20100CT-G1.pdf
- Description:
- DIODE ARR SCHOT 100V 10A TO2203
- Quantity:
- Payment:

- Shipping:

Inventory:33,642
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Product details
Overview
MBR20100CT-G1 from Diodes Incorporated is a high-voltage dual common-cathode Schottky rectifier in TO-220F-3 package, rated for 100 V reverse voltage, 10 A average forward current per diode leg (20 A total), and 0.85 V max forward voltage at 10 A and +25°C. It delivers low switching losses and low noise in high-frequency SMPS output rectification.
For engineers reviewing the MBR20100CT-G1 datasheet, MBR20100CT-G1 pinout, MBR20100CT-G1 application, or MBR20100CT-G1 equivalent, key selection criteria include its dual-diode topology, 150°C junction rating, 150 A non-repetitive surge capability, RoHS/Green compliance, and thermal resistance of 4.5°C/W (junction-to-case) in TO-220F-3.
Technical Context
This device integrates two independent Schottky diodes sharing a common cathode terminal, enabling synchronous or interleaved rectification in dual-rail or center-tapped topologies. Its guard-ring structure enhances ruggedness against transient overvoltage stress.
Designed for medium-voltage, high-frequency power conversion, it operates up to +150°C junction temperature with 10000 V/µs dv/dt rating and exhibits <0.1 mA reverse leakage at +25°C under rated DC blocking voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - Maximum repetitive reverse voltage each diode can block without breakdown. |
| IF(AV) per leg | 10 A - Continuous average forward current per diode at TC = +122°C, defining thermal design margin. |
| VF (max) | 0.85 V @ 10 A, +25°C - Low conduction loss enabling high-efficiency 12–48 V output stages. |
| IR (max) | 0.1 mA @ 100 V, +25°C - Minimal leakage preserves efficiency in standby and light-load conditions. |
| RθJC | 4.5 °C/W - Junction-to-case thermal resistance in TO-220F-3, critical for heatsink sizing. |
| IFSM | 150 A - Non-repetitive surge current handling capability for inrush and fault transients. |
| TJ range | −65°C to +150°C - Wide operating junction temperature supports industrial and automotive-adjacent environments. |
Pinout & Package
Package: TO-220F-3 - Insulated plastic case with flanged mounting tab, 1.9 g mass, UL 94V-0 rated molding compound, matte tin-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode 1 | Input terminal for first rectifier path; electrically isolated from case. |
| 2 (K) | Common Cathode | Shared output node; internally connected to metal tab (electrically tied to pin 2). |
| 3 (A2) | Anode of Diode 2 | Input terminal for second rectifier path; electrically isolated from case. |
Key Features
| Feature | Design Value |
|---|---|
| Low VF at high current | 0.85 V @ 10 A ensures <8.5 W conduction loss per diode leg at full load. |
| Guard-ring protected junction | Enhances ruggedness against ESD (>8 kV HBM) and line transients in unregulated AC/DC inputs. |
| High TJ rating | +150°C operation enables compact thermal design without derating in enclosed power supplies. |
| Lead-free & Green compliant | Meets RoHS 3 (2015/863/EU), <900 ppm Br/Cl, <1000 ppm Sb - suitable for eco-sensitive industrial OEMs. |
Applications
| Server PSU Output Rectification | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: 12 V/24 V secondary-side rectification in 80 PLUS Titanium server PSUs with synchronous FETs disabled. IC Role / Device Role / Timing Role: Dual-anode Schottky rectifier providing low-loss, low-noise DC output with shared cathode return path. Use Value: 0.85 V VF reduces conduction loss by ~35% vs. standard silicon rectifiers, improving full-load efficiency by >0.8%. |
Use Scenario: Dual-rail ±15 V output stage in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Common-cathode dual diode enabling independent anode routing for isolated positive/negative rails. Use Value: Guard-ring protection sustains reliability under 150 A surge events during motor drive startup transients. |
| Telecom Brick Power Supply | Medical Imaging Power Module |
|
Use Scenario: 48 V input-to-3.3 V/5 V intermediate bus conversion in telecom "brick" modules operating at 300–500 kHz. IC Role / Device Role / Timing Role: High-frequency rectifier minimizing reverse recovery noise and EMI in hard-switched flyback outputs. Use Value: 10000 V/µs dv/dt rating prevents false triggering in noisy telecom environments with fast edge rates. |
Use Scenario: Auxiliary 5 V/3.3 V bias supply in CT scanner detector module power subsystems. IC Role / Device Role / Timing Role: Dual-leg rectifier delivering redundant low-noise DC rails with shared thermal path to heatsink. Use Value: 4.5°C/W RθJC enables stable operation at 125°C case temperature without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-MBR20100CT | Same 100 V/10 A per leg, but TO-220-3 (non-isolated tab); RθJC = 2.5°C/W. | Requires insulating washer for heatsink mounting; higher thermal performance but less isolation. | Select when maximum thermal efficiency is prioritized and electrical isolation from heatsink is managed externally. |
| ON Semiconductor MBR20100CT | Identical ratings and TO-220F-3 package; minor differences in IR spec (0.15 mA max @ +25°C vs. 0.1 mA). | No functional impact in typical SMPS designs; same footprint and thermal profile. | Drop-in alternative where Diodes' supply chain is constrained; verify date-code traceability for long-term BOM stability. |
Compared with VS-MBR20100CT and ON's MBR20100CT, the MBR20100CT-G1 offers superior electrical isolation via TO-220F-3 insulation and tighter IR control, making it preferred for medical and isolated industrial systems where creepage/clearance and leakage sensitivity matter.
Availability
MBR20100CT-G1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom brick modules requiring stable component supply, RoHS/Green compliance, and high-reliability Schottky rectification.
Supply support for MBR20100CT-G1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The MBR20100CT-G1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained industrial and computing power supplies.
FAQ
What is the thermal interface requirement for MBR20100CT-G1 in TO-220F-3?
The TO-220F-3 package features an insulated tab, so no additional insulator is needed between the device and heatsink. Thermal paste or pad must be applied to the metal tab surface. Mounting torque should be 0.5–0.7 N·m to ensure optimal RθJC of 4.5°C/W without cracking the molded case.
Can MBR20100CT-G1 replace a single-diode Schottky in existing designs?
Yes, but only if the circuit uses a common-cathode configuration and both anodes are independently driven. Its dual-diode structure cannot substitute for a single-anode/single-cathode part without board-level rewiring. Pin 2 (K) must serve as the sole cathode return path.
Is MBR20100CT-G1 qualified for automotive applications?
No - it is not AEC-Q101 qualified. While it meets +150°C TJ and RoHS/Green requirements, Diodes explicitly states automotive use requires separate PPAP-capable, IATF 16949-manufactured variants (e.g., MBR20100CTQ-G1). This part is intended for industrial/computing applications.
How does the guard-ring structure improve reliability?
The integrated guard-ring reduces electric field crowding at the PN junction periphery, suppressing premature avalanche breakdown during voltage transients. This extends lifetime under repeated 150 A surge events and improves ESD robustness - validated at >8 kV HBM and >400 V MM per JEDEC standards.
MBR20100CT-G1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 840 mV @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 50 µA @ 100 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
MBR20100CT-G1 FAQ
1.How can I place an order for MBR20100CT-G1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR20100CT-G1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBR20100CT-G1 reliable?
The price and inventory of MBR20100CT-G1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR20100CT-G1 is usually 5 days.
3.What payment methods are accepted for MBR20100CT-G1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR20100CT-G1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBR20100CT-G1?
MBR20100CT-G1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBR20100CT-G1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBR20100CT-G1?
For technical support, including MBR20100CT-G1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR20100CT-G1 requirements.
6.How does Aetrix verify that MBR20100CT-G1 is sourced from the original manufacturer or authorized distributors?
All MBR20100CT-G1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR20100CT-G1 meets industry standards.
7.What is the process for return or replacement of MBR20100CT-G1?
All MBR20100CT-G1 units undergo pre-shipment inspection (PSI). If there is an issue with MBR20100CT-G1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR20100CT-G1 part is unused and in its original packaging.
Return procedure for MBR20100CT-G1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBR20100CT-G1 Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
onsemi
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