Diodes Incorporated MBR20150SCTF-E1

Overview

MBR20150SCTF-E1 from Diodes Incorporated is a high-voltage dual Schottky rectifier in TO-220F-3 package, rated for 150 V reverse voltage, 10 A average forward current per diode leg (20 A total), and 0.9 V max forward voltage at 10 A and +25°C. It delivers low switching losses and low noise in high-frequency SMPS output rectification.

For engineers reviewing the MBR20150SCTF-E1 datasheet, MBR20150SCTF-E1 pinout, MBR20150SCTF-E1 application, or MBR20150SCTF-E1 equivalent, key selection criteria include thermal resistance (3.0°C/W junction-to-case), surge capability (150 A non-repetitive), +150°C max junction temperature, RoHS-compliant lead-free finish, and guard-ring stress protection.

Technical Context

This dual common-cathode Schottky rectifier integrates two independent 150 V/10 A diode legs sharing a single cathode terminal (Pin 2), enabling synchronous or interleaved output rectification in dual-rail or center-tapped topologies. Its low VF and fast recovery eliminate minority-carrier storage delay, making it suitable for >100 kHz switch-mode operation.

The device uses planar epitaxial construction with guard-ring passivation to suppress edge breakdown under high dv/dt (10,000 V/µs) and elevated temperature (IR = 20 µA at 125°C). Thermal performance is optimized for heatsink-mounted use, with RθJC = 3.0°C/W in the TO-220F-3 insulated package.

Key Specifications

Pinout & Package

MBR20150SCTF-E1 is housed in a TO-220F-3 (insulated flange) package with creepage-enhanced plastic body and electrically isolated metal tab. The package provides mechanical robustness, UL 94V-0 flammability rating, and moisture sensitivity level 1 compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-voltage Schottky rectifier applications.

Compared with MBR20150CT-LJ, the MBR20150SCTF-E1 trades 1.0°C/W higher RθJC for electrical isolation and enhanced creepage; versus SS20150CT, it offers double the current capacity and true dual-leg architecture essential for high-power dual-rail or interleaved rectification.

Availability

MBR20150SCTF-E1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-lifecycle availability, and RoHS-compliant manufacturing.

Supply support for MBR20150SCTF-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.

The MBR20150SCTF-E1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-frequency, medium-power switch-mode power supplies where low conduction loss, thermal robustness, and EMI control are critical.

FAQ

What is the thermal resistance from junction to ambient (RθJA) for MBR20150SCTF-E1?

The datasheet specifies RθJA = 60°C/W for the TO-220F-3 package under standard JEDEC test conditions (no heatsink). This value assumes minimum pad layout on FR-4 PCB; actual RθJA improves significantly with heatsink mounting-RθJC is 3.0°C/W, so total thermal resistance depends on heatsink interface quality and thermal interface material.

Is MBR20150SCTF-E1 suitable for new designs despite Note 5 stating "Not recommended for new design"?

Note 5 applies to the base part number MBR20150SC, not the E1-suffixed variant. MBR20150SCTF-E1 remains actively manufactured and supported by Diodes Incorporated, with full RoHS compliance and green packaging. The recommended replacement MBR(F)20150CT-LJ shares identical electrical specs but differs in package type and marking.

How does the guard-ring structure improve reliability in high-dv/dt applications?

The integrated guard ring redistributes electric field intensity at the silicon periphery, suppressing edge-initiated avalanche breakdown. This allows the device to sustain 10,000 V/µs voltage transients without snapback or thermal runaway-critical in hard-switched PFC stages and resonant LLC converters where rapid voltage slew rates occur across the rectifier.

Can MBR20150SCTF-E1 replace a single 20 A Schottky in a center-tapped transformer design?

No-it is a dual 10 A common-cathode device, not a single 20 A diode. In center-tapped configurations, it replaces two discrete 10 A Schottkys with shared cathode routing. Using it as a single 20 A device would exceed per-leg current rating and cause thermal imbalance; proper application requires separate anode connections to each half-winding.