Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated MBR2150VRTR-E1

Part No.:
MBR2150VRTR-E1
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixMBR2150VRTR-E1.pdf
Description:
DIODE SCHOTTKY 150V 2A DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,660

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MBR2150VRTR-E1 from Diodes Incorporated is a high-voltage Schottky rectifier designed for output rectification in switch-mode power supplies and medium-voltage, high-frequency DC-DC converters. It delivers 2 A average forward current at 150 V peak reverse voltage, with 0.85 V max forward voltage at +25°C and 0.1 mA max reverse leakage at rated voltage - enabling low-loss, low-noise operation in compact AC/DC adapters and industrial power modules.

For engineers reviewing the MBR2150VRTR-E1 datasheet, MBR2150VRTR-E1 pinout, MBR2150VRTR-E1 application, or MBR2150VRTR-E1 equivalent, key selection criteria include its DO-214AC package thermal resistance (23 °C/W junction-to-lead), 75 A non-repetitive surge rating, guard-ring stress protection, RoHS-compliant matte tin finish, and guaranteed operation up to +150°C junction temperature.

Technical Context

This Schottky rectifier uses a planar epitaxial construction with integrated guard-ring structure to suppress edge breakdown and improve ruggedness under transient overvoltage conditions. Its low forward voltage drop and fast recovery (no minority-carrier storage) minimize conduction and switching losses in high-frequency topologies like flyback and forward converters operating above 100 kHz.

The device is characterized across -65°C to +150°C junction temperature range, with reverse leakage rising to 2.0 mA at +125°C and forward voltage dropping to 0.67 V at same condition - supporting stable performance in thermally constrained environments such as enclosed LED drivers and telecom power bricks.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM150 V - Withstands repetitive reverse voltage up to 150 V without breakdown, suitable for 115/230 VAC input-derived 12–48 V output rails.
IF(AV)2 A - Sustains continuous forward current of 2 A at TC = TBD, enabling use in 25–50 W power supply outputs.
VF (MAX)0.85 V @ 2 A, +25°C - Reduces conduction loss to ≤1.7 W per diode, critical for efficiency-critical 87+ Titanium designs.
IR (MAX)0.1 mA @ 150 V, +25°C - Limits standby power loss in no-load conditions, supporting Energy Star Level VI compliance.
IFSM75 A - Survives cold-start inrush and line-transient surges without degradation in typical SMPS front-end layouts.
TJ Range-65°C to +150°C - Enables deployment in automotive under-hood auxiliary supplies and industrial motor drive auxiliary rails.

Pinout & Package

MBR2150VRTR-E1 is supplied in the DO-214AC (SMA) surface-mount package: molded plastic case, UL 94V-0 rated, 0.062 g weight, with matte tin-plated copper leadframe solderable per MIL-STD-202 Method 208.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to transformer secondary or switching node; must be routed with low-inductance trace to minimize ringing.
CathodeForward current exit / reverse voltage blocking terminalMarked by cathode band; ties to output capacitor positive rail and feedback network reference point.

Key Features

FeatureDesign Value
Guard-ring protected junctionPrevents premature edge breakdown under dv/dt stress up to 10,000 V/µs, improving reliability in fast-switching GaN-based converters.
Low thermal resistance RθJL23 °C/W (DO-214AC) - Enables 2 A operation with <30°C junction rise over lead temperature, reducing need for thermal vias.
RoHS-compliant & halogen-freeE1 suffix denotes lead-free matte tin finish; "Green" status confirms <900 ppm Br/Cl and <1000 ppm Sb - meets IPC-1752A reporting requirements.
ESD robustness8 kV HBM rating - survives handling and board assembly without additional protection circuitry in controlled environments.

Applications

AC/DC Adapter Output RectificationIndustrial DC-DC Converter Secondary Side

Use Scenario: 12 V/2 A output stage in universal-input 115–230 VAC wall adapters for networking equipment.

IC Role / Device Role / Timing Role: Schottky rectifier replacing standard PN diode to reduce conduction loss and improve light-load efficiency.

Use Value: 0.85 V VF cuts diode dissipation by ~40% vs. 1.1 V Si diode, enabling smaller heatsink and meeting DoE Level VI standby limits.

Use Scenario: Isolated 24 V to 5 V/2 A step-down converter in PLC I/O module power subsystem.

IC Role / Device Role / Timing Role: Output rectifier in synchronous or quasi-resonant flyback topology operating at 250 kHz.

Use Value: Fast zero-recovery eliminates reverse recovery charge (Qrr ≈ 0), eliminating snubber losses and EMI spikes during turn-off.

LED Driver Auxiliary SupplyTelecom Power Shelf Rectification

Use Scenario: 15 V bias supply for gate drivers and controllers in constant-current LED driver with 300 V bus.

IC Role / Device Role / Timing Role: High-voltage Schottky rectifier in auxiliary winding-fed buck-derived supply.

Use Value: 150 V VRRM safely handles reflected transients from main 300 V bus, while 0.1 mA IR minimizes quiescent drain on transformer auxiliary winding.

Use Scenario: +48 V intermediate bus rectification in distributed power architecture for base station RF cards.

IC Role / Device Role / Timing Role: Primary-side output rectifier in half-bridge LLC resonant converter.

Use Value: 75 A IFSM withstands hot-swap events and load-dump transients without derating, supporting N+1 redundancy schemes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Vishay SS215Same 150 V VRRM, 2 A IF(AV), but VF = 0.87 V @ 2 A (+25°C); RθJA = 95 °C/W (DO-214AC).Slightly higher conduction loss; less optimized for ultra-thin adapter PCBs due to marginally higher thermal resistance.Select when second-source qualification requires Vishay's QPL listing or legacy design reuse.
ON Semiconductor SB2150Identical electrical specs (150 V, 2 A, 0.85 V VF), but offered only in DO-15 axial package (RθJA = 80 °C/W, weight = 0.39 g).Requires through-hole mounting and larger board area; unsuitable for high-density SMT production.Choose only for through-hole prototyping or legacy repair where DO-15 footprint is fixed.

Compared with SS215 and SB2150, MBR2150VRTR-E1 provides the lowest thermal resistance in DO-214AC (23 °C/W RθJL), highest surge rating (75 A), and strictest halogen-free compliance - making it optimal for space-constrained, high-reliability SMT power supplies.

Availability

MBR2150VRTR-E1 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial DC-DC converters, LED driver auxiliary supplies, and telecom power shelf rectification requiring stable component supply, full RoHS/Green compliance, and consistent tape-and-reel delivery.

Supply support for MBR2150VRTR-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

MBR2150 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for efficiency-critical, high-frequency power conversion in compact form factors - emphasizing low VF, rugged transient response, and environmentally compliant packaging.

FAQ

What is the maximum junction temperature for continuous operation?

The MBR2150VRTR-E1 supports continuous operation from -65°C to +150°C junction temperature. At +150°C, its reverse leakage rises to 2.0 mA and forward voltage drops to 0.67 V at 2 A - both values remain within specification limits defined in DS36959 Rev. 5-2. Thermal design must ensure junction temperature stays below this limit under worst-case ambient and power dissipation conditions.

Is MBR2150VRTR-E1 compatible with lead-free reflow profiles?

Yes. The device uses matte tin annealed over copper leadframe and is qualified for standard Pb-free reflow per J-STD-020, with peak temperature up to 260°C. Its moisture sensitivity level is rated Class 1, meaning it can be stored indefinitely at ≤30°C/60% RH without baking prior to assembly.

Does this part have a specified reverse recovery time (trr)?

No - as a Schottky rectifier, MBR2150VRTR-E1 has no minority-carrier storage mechanism, so trr is effectively zero. This eliminates reverse recovery loss and associated EMI, distinguishing it from fast-recovery PN diodes. The datasheet specifies only dv/dt capability (10,000 V/µs) and ESD ratings (8 kV HBM).

Can MBR2150VRTR-E1 replace a standard PN rectifier in an existing design?

Yes, provided the original design uses a 150 V, 2 A PN diode and operates below 150 kHz. Due to lower VF and zero Qrr, it reduces conduction loss and eliminates snubber needs - but verify layout parasitics, as faster switching may expose ringing. Also confirm cathode/anode orientation matches DO-214AC pinout (cathode marked band).

MBR2150VRTR-E1 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
DO-214AC, SMA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
850 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 150 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC
Operating Temperature - Junction:
-65°C ~ 150°C

MBR2150VRTR-E1 FAQ

1.How can I place an order for MBR2150VRTR-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MBR2150VRTR-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MBR2150VRTR-E1 reliable?

The price and inventory of MBR2150VRTR-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR2150VRTR-E1 is usually 5 days.

3.What payment methods are accepted for MBR2150VRTR-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR2150VRTR-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MBR2150VRTR-E1?

MBR2150VRTR-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MBR2150VRTR-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MBR2150VRTR-E1?

For technical support, including MBR2150VRTR-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR2150VRTR-E1 requirements.

6.How does Aetrix verify that MBR2150VRTR-E1 is sourced from the original manufacturer or authorized distributors?

All MBR2150VRTR-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR2150VRTR-E1 meets industry standards.

7.What is the process for return or replacement of MBR2150VRTR-E1?

All MBR2150VRTR-E1 units undergo pre-shipment inspection (PSI). If there is an issue with MBR2150VRTR-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MBR2150VRTR-E1 part is unused and in its original packaging.

Return procedure for MBR2150VRTR-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MBR2150VRTR-E1 Tags

  • MBR2150VRTR-E1
  • MBR2150VRTR-E1 PDF
  • MBR2150VRTR-E1 Datasheet
  • MBR2150VRTR-E1 Specifications
  • MBR2150VRTR-E1 Images
  • Diodes Incorporated
  • Diodes Incorporated MBR2150VRTR-E1
  • Buy MBR2150VRTR-E1
  • MBR2150VRTR-E1 Price
  • MBR2150VRTR-E1 Distributor
  • MBR2150VRTR-E1 Supplier
  • MBR2150VRTR-E1 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER