Taiwan Semiconductor Corporation MBR2535CTH

Overview

MBR2535CTH from Taiwan Semiconductor is a dual-die AEC-Q101-qualified Schottky barrier rectifier in TO-220AB package, rated for 25A average forward current and 35V repetitive peak reverse voltage, with 200A surge capability and 0.82V forward voltage at 25A/25°C - used in automotive-grade DC-DC converters and SMPS secondary-side rectification.

For engineers reviewing the MBR2535CTH datasheet, MBR2535CTH pinout, MBR2535CTH application, or MBR2535CTH equivalent, key selection criteria include its AEC-Q101 qualification, low VF at high IF, junction-to-case thermal resistance of 1°C/W, and dual-diode configuration enabling center-tap or full-wave bridge topologies without external paralleling.

Technical Context

This device integrates two independent Schottky diodes in a single TO-220AB thermally optimized package, sharing a common cathode connection (center-tab configuration). Its guard ring structure provides overvoltage protection, while the matte tin-plated leads meet J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Designed for high-efficiency switching applications, the MBR2535CTH operates across -55°C to +150°C junction temperature range, supports 10,000 V/μs critical dv/dt rating, and delivers <200 µA reverse leakage at 35V/25°C - enabling stable performance in compact, thermally constrained power stages.

Key Specifications

Pinout & Package

Package: TO-220AB, 3-terminal molded plastic case with isolated metal tab (cathode-connected), UL 94V-0 rated compound, 1.90g mass, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-25CPQ035 and MBR2535CT, the MBR2535CTH uniquely combines AEC-Q101 qualification, halogen-free construction, and guaranteed 0.82V VF at full-rated current - making it the only option qualified for safety-critical automotive power conversion without layout or thermal redesign.

Availability

MBR2535CTH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial SMPS secondary rectification, and telecom DC-DC brick designs requiring stable component supply, long-term lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for MBR2535CTH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The MBR2535CTH belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-reliability 12V/24V/48V automotive and industrial power conversion where low VF, surge robustness, and thermal stability are critical.

FAQ

What does the "H" suffix in MBR2535CTH signify?

The "H" suffix in MBR2535CTH indicates full AEC-Q101 qualification and halogen-free compliance per IEC 61249-2-21. Unlike the base MBR2535CT, the MBR2535CTH undergoes accelerated stress testing including temperature cycling, humidity bias, and high-temperature operating life - confirming suitability for automotive under-hood applications. This distinction is documented in TSC's ordering information table and verified on official distributor listings.

Is MBR2535CTH pin-compatible with MBR2535CT?

Yes, MBR2535CTH is mechanically and electrically pin-compatible with MBR2535CT - both use identical TO-220AB packaging, dual-anode/common-cathode pinout, and share all absolute maximum ratings and electrical specifications. The only differences are AEC-Q101 qualification and halogen-free material content; no PCB or schematic changes are needed when upgrading from MBR2535CT to MBR2535CTH.

What is the thermal resistance from junction to case (RθJC) for MBR2535CTH?

The junction-to-case thermal resistance (RθJC) for MBR2535CTH is 1°C/W, measured under standard JEDEC test conditions. This value is confirmed in the Thermal Performance section of the official TSC datasheet (Version K2104, Page 2) and enables direct heatsink mounting with predictable temperature rise - for example, dissipating 20W yields only a 20°C junction-to-case delta at steady state.

Does MBR2535CTH support full-wave rectification without external components?

Yes, MBR2535CTH supports full-wave rectification natively via its dual-anode/common-cathode configuration. When used with a center-tapped transformer or dual-phase interleaved controller, both anodes conduct during alternate half-cycles while sharing the cathode return path - eliminating the need for external diode pairing, reducing layout complexity, and improving thermal uniformity across the two dies within the same package.

What is the maximum reverse leakage current for MBR2535CTH at 125°C?

The maximum reverse leakage current (IR) for MBR2535CTH is 15 mA at 35V reverse bias and TJ = 125°C, as specified in the Electrical Specifications table (Page 2 of TSC datasheet K2104). This value is measured under 30ms pulse conditions and reflects worst-case behavior in high-temperature automotive environments - critical for evaluating standby power loss in always-on vehicle modules.