Taiwan Semiconductor Corporation MBR2560CT

Overview

MBR2560CT from Taiwan Semiconductor is a 25A, 60V dual-die Schottky barrier rectifier in TO-220AB package, featuring 0.75V forward voltage at 12.5A/25°C and 10mA reverse leakage at 125°C, used in high-efficiency DC-DC converters and industrial SMPS.

For engineers reviewing the MBR2560CT datasheet, MBR2560CT pinout, MBR2560CT application, or MBR2560CT equivalent, key selection criteria include junction-to-case thermal resistance (1°C/W), repetitive peak reverse voltage (60V), surge current rating (200A), and AEC-Q101 qualification availability.

Technical Context

This dual-die Schottky rectifier integrates two independent anode-cathode junctions in a single TO-220AB thermally optimized package, enabling shared heatsinking for synchronous or parallel output configurations. Its low VF and fast recovery eliminate minority-carrier storage delay, supporting high-frequency switching up to 20kHz square-wave operation.

The device operates across -55°C to +150°C junction temperature range with 10,000 V/μs dv/dt rating and guard-ring protection against transient overvoltage. Reverse leakage remains ≤10mA at rated VR and 125°C, ensuring stable performance in thermally stressed power stages.

Key Specifications

Pinout & Package

Package: TO-220AB - Three-terminal through-hole package with isolated mounting tab, matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-25CPH06 and ON Semiconductor's MBR2560CT, the Taiwan Semiconductor MBR2560CT offers identical TO-220AB form factor and thermal interface, lower cost than TO-247 alternatives, and direct second-source compatibility - making it optimal for cost-sensitive, space-constrained industrial and consumer power supplies.

Availability

MBR2560CT is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and laptop adapters requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for MBR2560CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The MBR25xxCT series targets high-efficiency AC/DC and DC/DC power conversion, emphasizing low VF, rugged surge capability, and automotive-qualified variants for mission-critical embedded systems.

FAQ

What is the maximum junction temperature rating for MBR2560CT?

The MBR2560CT has a maximum junction temperature (TJ max) of +150°C, validated across its full operating range from -55°C to +150°C. This rating supports reliable operation in thermally demanding applications such as enclosed industrial power supplies and automotive under-hood modules. Derating curves in the official datasheet define safe current limits at elevated case temperatures, and the 1°C/W junction-to-case thermal resistance enables accurate thermal modeling for heatsink selection. The MBR2560CT maintains specified electrical parameters within this full temperature envelope.

Does MBR2560CT have AEC-Q101 qualification?

The MBR2560CT itself is not AEC-Q101 qualified, but its variant MBR2560CTH is explicitly qualified per AEC-Q101. The "H" suffix denotes automotive-grade screening including stress tests for temperature cycling, humidity, and mechanical shock. For automotive body control modules or infotainment power supplies requiring automotive qualification, MBR2560CTH must be selected - it shares identical electrical specifications and TO-220AB packaging with the standard MBR2560CT, differing only in test documentation and traceability.

What is the forward voltage of MBR2560CT at full rated current and high temperature?

At 25A and 125°C junction temperature, the MBR2560CT exhibits a typical forward voltage of 0.73V, based on manufacturer characterization data. This value is derived from the datasheet's electrical specifications table under IF = 25.0A, TJ = 125°C condition for the MBR2550CT/MBR2560CT group. The low temperature coefficient of Schottky diodes ensures minimal VF increase over temperature, supporting stable efficiency in high-ambient environments. Designers should use this 0.73V figure for worst-case conduction loss calculations in thermal simulations.

How is the dual-die configuration implemented in MBR2560CT's TO-220AB package?

The MBR2560CT integrates two independent Schottky die in a single TO-220AB package with a common cathode connected to the metal tab and separate anode leads (Lead 1 and Lead 2). This configuration allows either parallel operation for higher current handling or independent channel use in dual-output converters. Unlike monolithic dual-diodes with internal series connections, the MBR2560CT provides full isolation between anodes - verified by the datasheet's marking diagram and absolute maximum ratings table showing identical per-die parameters. No internal bonding connects the anodes, preserving design flexibility.

What is the reverse leakage current specification for MBR2560CT at elevated temperature?

The MBR2560CT specifies a maximum reverse leakage current (IR) of 10 mA at rated VR = 60V and TJ = 125°C, per the manufacturer's electrical specifications table. This value applies specifically to the MBR2550CT–MBR2560CT subgroup and is measured under 30ms pulse conditions. At 25°C, IR is limited to 200 µA - a 50× increase at high temperature reflects expected Schottky behavior. Designers must account for this leakage in standby power budgets and thermal runaway analysis, especially in paralleled configurations where mismatched IR can cause current imbalance.