Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation MBR30100CT-Y

Part No.:
MBR30100CT-Y
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Diode Arrays
Package:
TO-220-3
Datasheet:
AetrixMBR30100CT-Y.pdf
Description:
DIODE ARR SCHOT 100V 30A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,320

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MBR30100CT-Y from Taiwan Semiconductor is a 30A, 100V dual-die Schottky barrier rectifier in TO-220AB package, featuring 0.84V max forward voltage at 15A/25°C and 0.94V at 30A/25°C, with 7.5mA reverse leakage at 125°C and 1.5°C/W junction-to-case thermal resistance - used in high-efficiency DC-DC converters and industrial SMPS.

For engineers reviewing the MBR30100CT-Y datasheet, MBR30100CT-Y pinout, MBR30100CT-Y application, or MBR30100CT-Y equivalent, key selection criteria include rated VRRM (100V), IFSM (200A), TJ max (150°C), thermal resistance (1.5°C/W), and dual-diode configuration for center-tapped or full-wave bridge topologies.

Technical Context

This dual-die Schottky rectifier integrates two independent anode-cathode junctions in a single TO-220AB package with common cathode connection (CT), enabling full-wave rectification without external wiring. Its low VF and fast switching eliminate minority-carrier recovery losses, making it suitable for high-frequency (>20kHz) operation.

The device sustains 200A non-repetitive surge current (8.3ms half-sine) and exhibits dv/dt capability of 10,000 V/μs. Thermal performance is defined by RθJC = 1.5°C/W, requiring mechanical mounting with ≤0.56 N·m torque to maintain thermal integrity under continuous 30A conduction.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM100 V - Maximum repetitive reverse voltage before breakdown; sets upper limit for input voltage in DC-DC or adapter designs.
IF30 A - Continuous average forward current per diode; defines steady-state power handling capacity at rated case temperature.
IFSM200 A - Peak non-repetitive surge current; supports inrush tolerance during cold-start or fault conditions.
VF @ 15A, 25°C0.84 V - Forward voltage drop per diode; directly determines conduction loss (P = IF × VF) in efficiency-critical stages.
RθJC1.5 °C/W - Junction-to-case thermal resistance; enables thermal design of heatsink interface for 30A operation at TJ ≤ 150°C.
IR @ 100V, 125°C7.5 mA - Reverse leakage per diode; impacts standby power and thermal runaway risk in high-temp environments.

Pinout & Package

Package: TO-220AB, 3-terminal molded plastic case with matte tin-plated leads, UL 94V-0 rated compound, polarity marked on body, weight ≈1.90g.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Left)Anode 1Input terminal for first Schottky junction; connects to AC or switched node in full-wave or center-tap topology.
Pin 2 (Center)Cathode (Common)Shared cathode output for both diodes; serves as DC+ output node in dual-anode configurations.
Pin 3 (Right)Anode 2Input terminal for second Schottky junction; enables symmetrical full-wave rectification with shared cathode return.

Key Features

FeatureDesign Value
Low forward voltage0.84 V max at 15A/25°C - reduces conduction loss by ~30% vs. comparable 100V Si rectifiers, improving system efficiency.
Dual-die common-cathode configurationTwo independent Schottky junctions sharing one cathode terminal - eliminates need for external parallel or series diode wiring in full-wave designs.
Guard ring overvoltage protectionIntegrated edge termination structure - enhances ruggedness against transient voltage spikes without external snubbers.
High surge current rating200A IFSM (8.3ms) - withstands repeated inrush events in offline SMPS and motor drive auxiliary supplies.

Applications

Server Power SupplyIndustrial DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 48V–12V isolated buck-derived converters for rack-mounted servers.

IC Role / Device Role / Timing Role: Dual-anode Schottky rectifier providing full-wave output with common cathode return to minimize PCB trace inductance.

Use Value: 0.94V VF at 30A/25°C enables >94% conversion efficiency at full load while maintaining TJ < 130°C with standard heatsinking.

Use Scenario: Output rectification in 24V input, 5V/30A regulated DC-DC modules for PLC I/O power rails.

IC Role / Device Role / Timing Role: High-current, low-loss rectifier replacing discrete diode pairs to reduce component count and thermal footprint.

Use Value: 1.5°C/W RθJC allows direct mounting to chassis with ≤0.56 N·m torque, eliminating dedicated heatsinks in space-constrained enclosures.

Laptop Adapter Secondary SideTelecom Rectifier Module

Use Scenario: Low-voltage, high-current output stage in compact 65W GaN-based laptop adapters operating at 200kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-recovery Schottky rectifier handling 30A average current with minimal reverse recovery loss.

Use Value: Absence of minority-carrier storage enables clean turn-off at high frequency, reducing EMI and eliminating snubber requirements.

Use Scenario: -48V telecom rectifier module output stage delivering 30A to distributed power architecture backplanes.

IC Role / Device Role / Timing Role: Dual-diode rectifier supporting redundant input paths or split-phase rectification with shared cathode output.

Use Value: 7.5mA IR at 125°C ensures stable no-load regulation and low standby dissipation across extended ambient temperature range (-40°C to +70°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Vishay VS-30CPH100Same TO-220AB package, 30A/100V, VF = 0.82V @ 15A/25°C, RθJC = 1.4°C/WSlightly lower VF and thermal resistance; tighter IR spec (5mA @ 125°C)Preferred where margin in thermal headroom or leakage sensitivity is critical.
ON Semiconductor MBR30100CTIdentical electrical specs and TO-220AB package; RoHS-compliant but not halogen-free per IEC 61249-2-21No functional difference in circuit operation; differs only in material compliance documentationSelect when halogen-free certification is not required and cost or lead time favors ON Semi sourcing.

Compared with MBR30100CT-Y, VS-30CPH100 offers marginally better thermal and conduction performance, while MBR30100CT provides identical functionality without halogen-free compliance - choice depends on thermal budget, leakage tolerance, and material declaration requirements.

Availability

MBR30100CT-Y is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable RoHS/halogen-free compliance.

Supply support for MBR30100CT-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The MBR30100CT-Y belongs to TSC's high-current Schottky rectifier product line, engineered specifically for efficiency-critical secondary-side rectification in high-frequency switch-mode power supplies and DC-DC converters.

FAQ

What is the maximum junction temperature rating for MBR30100CT-Y?

The MBR30100CT-Y has a maximum junction temperature (TJ) rating of +150°C, verified per absolute maximum ratings table. This allows operation in high-ambient industrial environments when paired with appropriate heatsinking and airflow. Derating curves confirm usable current capacity down to 0A at 150°C case temperature. The MBR30100CT-Y must not exceed this limit to ensure reliability and avoid parametric shift.

Does MBR30100CT-Y have a common-cathode or common-anode configuration?

The MBR30100CT-Y uses a common-cathode (CT) configuration: Pin 2 is the shared cathode terminal, while Pins 1 and 3 serve as independent anodes. This layout supports full-wave rectification from center-tapped transformers or dual-switch topologies. The marking "CT" in MBR30100CT-Y explicitly denotes this common-cathode arrangement, confirmed in the ordering information and package diagram.

What is the forward voltage specification for MBR30100CT-Y at full rated current?

At 30A and 25°C junction temperature, the MBR30100CT-Y has a maximum forward voltage (VF) of 0.94V per diode, as specified in the Electrical Specifications table. At 125°C, VF rises to 0.82V - demonstrating positive temperature coefficient behavior typical of Schottky devices. These values are measured under pulsed conditions (PW = 0.3ms) and define worst-case conduction loss for thermal design.

Is MBR30100CT-Y halogen-free and RoHS compliant?

Yes, the MBR30100CT-Y is both RoHS compliant and halogen-free per IEC 61249-2-21, as stated in the FEATURES section. The molding compound contains no brominated or chlorinated flame retardants, and all terminals meet J-STD-002 solderability standards. Compliance documentation is available upon request for MBR30100CT-Y for automotive or medical-grade qualification programs.

What is the thermal resistance from junction to case (RθJC) for MBR30100CT-Y?

The junction-to-case thermal resistance (RθJC) for MBR30100CT-Y is 1.5°C/W, as specified in the THERMAL PERFORMANCE table. This value applies to both MBR30100CT-Y and MBR30150CT-Y variants and is measured under standardized mounting conditions. It enables accurate calculation of junction temperature rise above case temperature (ΔTJ = RθJC × PD), critical for validating thermal design margins in continuous 30A operation.

MBR30100CT-Y Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io) (per Diode):
30A
Voltage - Forward (Vf) (Max) @ If:
940 mV @ 30 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 100 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

MBR30100CT-Y FAQ

1.How can I place an order for MBR30100CT-Y through Aetrix?

Please submit a Request for Quotation (RFQ) for MBR30100CT-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MBR30100CT-Y reliable?

The price and inventory of MBR30100CT-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR30100CT-Y is usually 5 days.

3.What payment methods are accepted for MBR30100CT-Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR30100CT-Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MBR30100CT-Y?

MBR30100CT-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MBR30100CT-Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MBR30100CT-Y?

For technical support, including MBR30100CT-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR30100CT-Y requirements.

6.How does Aetrix verify that MBR30100CT-Y is sourced from the original manufacturer or authorized distributors?

All MBR30100CT-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR30100CT-Y meets industry standards.

7.What is the process for return or replacement of MBR30100CT-Y?

All MBR30100CT-Y units undergo pre-shipment inspection (PSI). If there is an issue with MBR30100CT-Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MBR30100CT-Y part is unused and in its original packaging.

Return procedure for MBR30100CT-Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MBR30100CT-Y Tags

  • MBR30100CT-Y
  • MBR30100CT-Y PDF
  • MBR30100CT-Y Datasheet
  • MBR30100CT-Y Specifications
  • MBR30100CT-Y Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation MBR30100CT-Y
  • Buy MBR30100CT-Y
  • MBR30100CT-Y Price
  • MBR30100CT-Y Distributor
  • MBR30100CT-Y Supplier
  • MBR30100CT-Y Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER