Taiwan Semiconductor Corporation MBR30150PTH

Overview

MBR30150PTH from Taiwan Semiconductor is a 30A, 150V AEC-Q101-qualified Schottky barrier rectifier in TO-247AD package, featuring 0.95V forward voltage at 15A/25°C, 1.02V at 30A/25°C, and 0.92V at 15A/125°C. It delivers high surge current capability (200A IFSM), low reverse leakage (500µA max at 25°C), and junction-to-case thermal resistance of 1.4°C/W for use in high-efficiency SMPS and DC-DC converters.

For engineers reviewing the MBR30150PTH datasheet, MBR30150PTH pinout, MBR30150PTH application, or MBR30150PTH equivalent, key selection criteria include its 150V VRRM rating, dual-die configuration, AEC-Q101 qualification, TO-247AD mechanical compatibility, and thermal performance under continuous 30A conduction.

Technical Context

This device implements a dual-die Schottky structure with guard ring overvoltage protection and matte tin-plated leads compliant with J-STD-002 solderability. Its 10,000 V/μs dV/dt rating supports fast-switching topologies while maintaining stable reverse blocking up to 150V.

Designed for operation from –55°C to +150°C junction temperature, it sustains 30A average forward current with derating above 125°C case temperature and exhibits 10mA max reverse leakage at 125°C - critical for thermally constrained automotive and industrial power supplies.

Key Specifications

Pinout & Package

Package: TO-247AD (TO-3P) - isolated mounting flange, 3-terminal through-hole package with center anode/cathode/anode pinout (dual common-cathode configuration). Weight: 6.10g. UL Recognized File # E-326243. RoHS and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-30CPH15 and MBR30H150CT, the MBR30150PTH uniquely combines AEC-Q101 qualification, TO-247AD thermal performance (1.4°C/W), and dual-die flexibility - making it optimal for automotive-grade, high-current, thermally demanding rectification where reliability and thermal headroom are critical.

Availability

MBR30150PTH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial SMPS, and LED driver power supplies requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for MBR30150PTH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, and protection components.

The MBR30150PTH belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial environments where thermal stability and surge robustness are essential.

FAQ

What is the peak repetitive reverse voltage rating for MBR30150PTH?

The MBR30150PTH has a peak repetitive reverse voltage (VRRM) rating of 150 V. This value defines the maximum reverse-biased voltage the device can block repeatedly without breakdown. It is measured under standard test conditions (TA = 25°C) and applies to both diode dies in the dual-die TO-247AD package. The 150V rating makes MBR30150PTH suitable for 100V-class bus applications with margin for transients.

Is MBR30150PTH qualified for automotive applications?

Yes, MBR30150PTH is AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code. This qualification confirms that the device has passed stress tests for temperature cycling, humidity, mechanical shock, and other reliability requirements defined for discrete semiconductors in automotive electronics. MBR30150PTH is therefore approved for use in engine control units, ADAS power supplies, and other under-hood or cabin-mounted automotive systems.

What is the forward voltage of MBR30150PTH at full rated current and room temperature?

At 30 A forward current and 25°C junction temperature, the MBR30150PTH exhibits a maximum forward voltage (VF) of 1.02 V per diode. This value is specified in the Electrical Specifications table and reflects worst-case conduction loss under nominal conditions. Designers should use this figure for worst-case power loss calculation: PLOSS = 1.02 V × 30 A = 30.6 W per diode.

Does MBR30150PTH have a common-cathode configuration?

Yes, MBR30150PTH uses a dual-die common-cathode configuration in its TO-247AD package. Pin 1 is Anode 1, Pin 2 is the shared Cathode, and Pin 3 is Anode 2. This arrangement allows independent anode connections while sharing a single low-inductance cathode path - ideal for interleaved or dual-output converter topologies where synchronized or staggered switching is employed.

What is the junction-to-case thermal resistance of MBR30150PTH?

The junction-to-case thermal resistance (RθJC) of MBR30150PTH is 1.4 °C/W, as specified in the Thermal Performance section. This value represents the thermal impedance between the silicon die junction and the metal mounting surface of the TO-247AD package. It enables accurate heatsink sizing: for example, to maintain TJ ≤ 150°C at 30A conduction with 30.6W dissipation, the total system thermal resistance (RθJA) must be ≤ (150 − 25)/30.6 ≈ 4.1°C/W, assuming 25°C ambient.