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Taiwan Semiconductor Corporation MBR30200PT
- Part No.:
- MBR30200PT
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-247-3
- Datasheet:
-
MBR30200PT.pdf
- Description:
- DIODE ARR SCHOT 200V 30A TO247AD
- Quantity:
- Payment:
- Shipping:
Inventory:3,376
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Product details
Overview
MBR30200PT from Taiwan Semiconductor is a 30A, 200V dual-die Schottky barrier rectifier in TO-247AD (TO-3P) package, featuring 1.10V forward voltage at 30A/25°C, 100µA reverse leakage at 200V/25°C, and 200A surge capability - deployed in high-efficiency SMPS and DC-DC converters for industrial power supplies.
For engineers reviewing the MBR30200PT datasheet, MBR30200PT pinout, MBR30200PT application, or MBR30200PT equivalent, key selection criteria include rated reverse voltage (200V), thermal resistance (1.4°C/W), junction temperature range (–55°C to +150°C), AEC-Q101 qualification status, and TO-247AD mechanical compatibility.
Technical Context
This device implements a dual-die configuration in a single TO-247AD package, enabling independent cathode connections for synchronous rectification or parallel operation. Its Schottky architecture eliminates minority-carrier storage delay, supporting high-frequency switching up to 20kHz with low forward conduction loss.
The MBR30200PT integrates guard ring protection against transient overvoltage and meets UL 94V-0 flammability requirements. With 10,000 V/μs critical dV/dt rating and JESD201 Class 2 whisker resistance, it supports robust operation in noisy industrial and automotive-grade power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - Maximum repetitive reverse blocking voltage; defines safe operating limit in high-voltage DC bus applications |
| IF | 30 A - Continuous average forward current; determines heatsink sizing and thermal derating in 24/7 power conversion |
| IFSM | 200 A - Non-repetitive surge current (8.3ms half-sine); withstands inrush during cold-start or fault recovery |
| VF @ 30A, 25°C | 1.10 V - Forward voltage drop; directly impacts conduction loss (33W at full load) and system efficiency |
| RθJC | 1.4 °C/W - Junction-to-case thermal resistance; enables accurate thermal modeling for mounting interface design |
| TJ max | +150 °C - Maximum junction temperature; sets upper boundary for ambient + power dissipation + thermal path design |
| IR @ 200V, 25°C | 100 µA - Reverse leakage current; low value minimizes standby power loss in high-impedance bias networks |
Pinout & Package
Package: TO-247AD (TO-3P) - isolated metal tab, three-terminal through-hole package with center anode and dual cathodes (K1, K2), rated for 1.13 N·m mounting torque and 6.10g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (center lead) | Common anode connection | Shared input node for dual-diode configuration; requires low-inductance layout to minimize switching noise coupling |
| Cathode 1 (left lead) | First diode cathode | Independent output path for phase-split or interleaved converter topologies |
| Cathode 2 (right lead) | Second diode cathode | Enables separate routing to distinct output rails or redundancy paths without shared cathode impedance |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring overvoltage protection | Prevents premature avalanche breakdown under fast transients, extending reliability in unregulated line inputs |
| AEC-Q101 qualified option (MBR30200PTH) | Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, HTRB) |
| Matte tin-plated leads | Ensures solderability per J-STD-002 and eliminates whisker growth risk in long-life industrial deployments |
| Dual-die isolation | Allows independent thermal and electrical management of each diode leg in multi-phase or redundant designs |
Applications
| Server Power Supply | Industrial Motor Drive |
|---|---|
Use Scenario: Secondary-side rectification in 48V–54V output, 3kW server PSUs with interleaved LLC topology. IC Role / Device Role / Timing Role: High-current Schottky rectifier replacing silicon diodes to reduce conduction loss and improve efficiency above 94%. Use Value: 1.10V VF at 30A lowers power dissipation by ~22W vs. 1.3V Si diode, reducing heatsink volume and fan loading. | Use Scenario: DC bus freewheeling in 3-phase IGBT-based VFDs for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Bidirectional energy recirculation path during IGBT turn-off, clamping inductive kickback. Use Value: 200A IFSM handles motor stall surges; 10,000 V/μs dV/dt rating prevents false triggering in noisy EMI environments. |
| Telecom Rectifier Module | EV Onboard Charger (OBC) |
Use Scenario: Output rectification in -48V telecom rectifiers operating continuously at 60°C ambient. IC Role / Device Role / Timing Role: Primary output diode stack in parallel-configured modules delivering up to 120A total. Use Value: Dual-cathode terminals allow independent current sensing and thermal monitoring per die, improving system diagnostics. | Use Scenario: AC/DC front-end PFC boost diode in 6.6kW bidirectional OBCs with 800V battery interface. IC Role / Device Role / Timing Role: High-voltage, high-current freewheeling diode in totem-pole PFC stage. Use Value: 200V VRRM supports 1.2× safety margin over 170V PFC peak; 150°C TJ max enables compact packaging near magnetics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-30CPH02-M3 | 30A, 200V, TO-247AC package; 1.05V VF @ 30A/25°C; no AEC-Q101 option | Same voltage/current rating but single-cathode configuration; lacks dual-cathode flexibility | Select when dual-cathode isolation is unnecessary and lower VF is prioritized over layout adaptability |
| ON Semiconductor MBR30200CT | 30A, 200V, TO-220AB package; 1.15V VF @ 30A/25°C; 2.5°C/W RθJC; not AEC-Q101 qualified | Lower thermal performance and smaller package footprint; unsuitable for >100W continuous operation | Select only for cost-sensitive, space-constrained, low-power applications where thermal headroom exceeds 40°C |
Compared with MBR30200PT, VS-30CPH02-M3 offers marginally lower conduction loss but forfeits dual-cathode routing; MBR30200CT trades thermal capability and ruggedness for lower cost and smaller size - making MBR30200PT optimal for thermally demanding, high-reliability dual-path designs.
Availability
MBR30200PT is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifier modules, and EV onboard chargers requiring stable component supply across extended production lifecycles.
Supply support for MBR30200PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1995.
The MBR30200PT belongs to TSC's high-current Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC power conversion in harsh thermal and electrical environments.
FAQ
What is the maximum junction temperature rating for the MBR30200PT?
The MBR30200PT has a maximum junction temperature (TJ) of +150°C, verified per absolute maximum ratings in the official datasheet. This rating allows operation in high-ambient environments such as enclosed industrial power supplies or automotive under-hood locations when paired with appropriate thermal management. The MBR30200PT must be derated linearly above 25°C case temperature per the forward current derating curve.
Does the MBR30200PT have AEC-Q101 qualification?
The base MBR30200PT is not AEC-Q101 qualified; however, the variant MBR30200PTH - identical in electrical and thermal specifications - is fully AEC-Q101 qualified per Version K2103 documentation. Engineers requiring automotive-grade validation must specify the "H" suffix part number; the MBR30200PT itself is intended for industrial and computing applications.
What is the forward voltage of the MBR30200PT at 30A and 125°C?
The MBR30200PT forward voltage at 30A and 125°C is not specified in the published datasheet - only values for lower-voltage variants (e.g., MBR30150PT = 0.98V) are provided at that condition. At 25°C, the MBR30200PT exhibits 1.10V VF at 30A. For high-temperature design, engineers should apply worst-case VF derating based on typical Schottky behavior or consult TSC application engineering for characterization data.
How does the dual-die configuration of the MBR30200PT affect PCB layout?
The dual-die configuration of the MBR30200PT provides two independent cathode terminals (K1 and K2), enabling separate current paths for interleaved or phase-split topologies. This allows differential current sensing, localized thermal monitoring, and reduced common-impedance noise coupling. Layout must maintain symmetrical trace lengths and thermal vias under both cathodes to preserve current balance and avoid thermal runaway in the MBR30200PT.
What is the reverse leakage current of the MBR30200PT at rated voltage and elevated temperature?
The MBR30200PT exhibits 100 µA maximum reverse leakage current (IR) at 200V and 25°C, and 10 mA at 200V and 125°C per the datasheet's electrical specifications table. This elevated leakage at high temperature is typical for Schottky devices and must be accounted for in standby power budgets and high-impedance bias networks where the MBR30200PT is used.
MBR30200PT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io) (per Diode):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 200 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD (TO-3P)
MBR30200PT FAQ
1.How can I place an order for MBR30200PT through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR30200PT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBR30200PT reliable?
The price and inventory of MBR30200PT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR30200PT is usually 5 days.
3.What payment methods are accepted for MBR30200PT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR30200PT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBR30200PT?
MBR30200PT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBR30200PT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBR30200PT?
For technical support, including MBR30200PT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR30200PT requirements.
6.How does Aetrix verify that MBR30200PT is sourced from the original manufacturer or authorized distributors?
All MBR30200PT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR30200PT meets industry standards.
7.What is the process for return or replacement of MBR30200PT?
All MBR30200PT units undergo pre-shipment inspection (PSI). If there is an issue with MBR30200PT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR30200PT part is unused and in its original packaging.
Return procedure for MBR30200PT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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