Taiwan Semiconductor Corporation MBR3035PT C0G

Overview

MBR3035PT from Taiwan Semiconductor is a 30A, 35V dual-die Schottky barrier rectifier in TO-247AD package, featuring 1.4°C/W junction-to-case thermal resistance, 200A surge current rating, and AEC-Q101 qualification option. It delivers low forward voltage (0.82V at 30A/25°C) for high-efficiency SMPS and DC-DC converters in industrial power supplies.

For engineers reviewing the MBR3035PT datasheet, MBR3035PT pinout, MBR3035PT application, or MBR3035PT equivalent, key selection criteria include repetitive peak reverse voltage (35V), forward current rating (30A), thermal performance (R_θJC = 1.4°C/W), surge capability (200A), and automotive-grade qualification availability.

Technical Context

This dual-die Schottky rectifier uses guard ring technology for overvoltage protection and achieves high surge current handling via optimized metal-semiconductor junction design. Its 10,000 V/μs critical dV/dt rating supports fast-switching topologies without parasitic turn-on.

The device operates across -55°C to +150°C junction temperature range with 1000 µA max reverse leakage at 25°C and 20 mA at 125°C, enabling stable performance in thermally demanding power conversion stages.

Key Specifications

Pinout & Package

Package: TO-247AD (TO-3P), 3-terminal through-hole package with isolated tab, matte tin-plated leads, UL 94V-0 molding compound, and polarity marking per device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-30CPH03-M3 and MBR3035CT, the MBR3035PT provides dual-die isolation, superior thermal resistance (1.4°C/W), and optional AEC-Q101 qualification-making it uniquely suited for high-reliability, high-density, and automotive-adjacent power systems.

Availability

MBR3035PT is available at Aetrix Electronics and suitable for switching mode power supplies, DC-DC converters, and TV/monitor power rails requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for MBR3035PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The MBR3035PT belongs to TSC's AEC-Q101-capable Schottky rectifier family, engineered for high-efficiency AC/DC and DC/DC power conversion where low V_F, high I_FSM, and thermal robustness are critical.

FAQ

What is the maximum junction temperature rating for the MBR3035PT?

The MBR3035PT has a maximum junction temperature (T_J) of +150°C, validated across its full operating range from -55°C to +150°C. This rating enables reliable operation in high-ambient environments such as enclosed power supplies and industrial enclosures. Derating curves in the official datasheet define allowable forward current reduction above 100°C case temperature. The MBR3035PT maintains specified electrical parameters-including 1000 µA reverse leakage at 25°C and 20 mA at 125°C-within this thermal envelope.

Does the MBR3035PT have AEC-Q101 qualification?

The MBR3035PT is available in an AEC-Q101-qualified version denoted by the suffix "H" (e.g., MBR3035PTH). Standard MBR3035PT units are not automatically qualified; only parts ordered with the "H" suffix undergo the full stress test sequence per AEC-Q101 Rev D. This qualification covers temperature cycling, high-temperature operating life, and mechanical shock testing-critical for automotive infotainment and body control module power stages. Always verify the ordering code and packaging label to confirm AEC-Q101 status for the MBR3035PT.

What is the forward voltage drop of the MBR3035PT at full rated current?

The MBR3035PT exhibits a typical forward voltage (V_F) of 0.82 V at 30 A and 25°C junction temperature, measured per diode under pulsed conditions. At elevated temperature (125°C), V_F drops to 0.73 V due to Schottky's negative temperature coefficient-improving conduction efficiency under thermal stress. These values are confirmed in the Electrical Specifications table of the official datasheet (Version K2103) and reflect actual device behavior, not guaranteed maxima. Designers should use 0.82 V for room-temperature loss calculations and 0.73 V for worst-case thermal analysis of the MBR3035PT.

How does the dual-die configuration of the MBR3035PT affect circuit layout?

As a dual-anode, common-cathode Schottky rectifier, the MBR3035PT provides two independent anode terminals sharing one cathode-enabling interleaved or split-input rectification without external paralleling. This configuration reduces PCB trace inductance and EMI compared to discrete dual-diode layouts. Layout must maintain symmetrical thermal paths to both anodes and ensure the cathode pad accommodates full 30A continuous current. Mounting torque must not exceed 1.13 N·m to prevent case deformation that could compromise internal die attachment integrity for the MBR3035PT.

What is the thermal resistance from junction to case (R_θJC) for the MBR3035PT?

The MBR3035PT has a typical junction-to-case thermal resistance (R_θJC) of 1.4°C/W, measured under standard mounting conditions with thermal interface material and flat heatsink contact. This value is critical for calculating maximum allowable power dissipation: P_max = (T_Jmax − T_C) / R_θJC. For example, at 100°C case temperature, the MBR3035PT can dissipate up to 35.7 W before reaching its 150°C junction limit. The low R_θJC results from optimized copper leadframe and direct die attach-key to achieving high power density in compact TO-247AD packages.