Taiwan Semiconductor Corporation MBR3050PT

Overview

MBR3050PT from Taiwan Semiconductor is a 30A, 50V dual-die Schottky barrier rectifier in TO-247AD package, featuring 0.75V typical forward voltage at 15A/25°C and 15mA max reverse current at 125°C, designed for high-efficiency DC–DC converters and switching power supplies.

For engineers reviewing the MBR3050PT datasheet, MBR3050PT pinout, MBR3050PT application, or MBR3050PT equivalent, key selection criteria include repetitive peak reverse voltage (50V), surge current rating (200A), thermal resistance (1.4°C/W), AEC-Q101 qualification availability, and TO-247AD mechanical compatibility with high-power heatsink mounting.

Technical Context

This dual-die Schottky rectifier uses guard ring structure for overvoltage protection and achieves low conduction loss via low VF design. Its 1.4°C/W junction-to-case thermal resistance supports sustained 30A operation when properly heatsinked.

The device sustains 200A non-repetitive surge current (8.3ms half-sine) and exhibits 10,000 V/μs critical dV/dt rating, enabling robust performance in fast-switching topologies like synchronous rectification and high-frequency SMPS.

Key Specifications

Pinout & Package

Package: TO-247AD (TO-3P), 3-terminal single-in-line outline with isolated tab, matte tin-plated leads, UL 94V-0 molding compound, polarity marked on case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-30CPH05 and MBR3050CT, the MBR3050PT offers superior thermal performance (1.4 vs. 2.5°C/W), AEC-Q101 qualification path, and dual-die flexibility-making it optimal for high-reliability, high-power-density 30A rectification where thermal management and automotive compliance matter.

Availability

MBR3050PT is available at Aetrix Electronics and suitable for switching mode power supplies, DC–DC converters, and TV power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for MBR3050PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The MBR3050PT belongs to TSC's high-current Schottky rectifier product line, engineered for efficiency-critical secondary-side rectification in high-frequency switching power supplies where low VF and robust surge capability are essential.

FAQ

What is the maximum junction temperature rating for MBR3050PT?

The MBR3050PT has a maximum junction temperature (T_J) of +150°C, verified per absolute maximum ratings table. This rating allows operation in high-ambient environments such as enclosed power supplies or automotive under-hood applications when paired with appropriate heatsinking. Derating curves confirm 30A continuous current is sustainable up to 100°C case temperature, with linear reduction beyond that point. The MBR3050PT must be mounted using ≤1.13 N·m torque to avoid mechanical damage while ensuring thermal contact integrity.

Does MBR3050PT have AEC-Q101 qualification?

The MBR3050PT itself is not automatically AEC-Q101 qualified; however, the AEC-Q101-qualified variant is designated MBR3050PTH per ordering information. That version undergoes additional stress testing including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing. For automotive applications requiring qualification, specify MBR3050PTH-not MBR3050PT-and verify qualification status via Taiwan Semiconductor's official release documentation.

What is the forward voltage specification for MBR3050PT at full rated current?

At 30A and 25°C junction temperature, the MBR3050PT has a maximum forward voltage of 0.82V per diode, as specified in the electrical characteristics table. At elevated temperature (125°C), the typical V_F rises to 0.73V at 30A. These values reflect actual conduction loss under real operating conditions and are critical for calculating power dissipation (P_LOSS = I_F × V_F) and selecting thermal management solutions for the MBR3050PT.

How does the dual-die configuration of MBR3050PT affect circuit layout?

The MBR3050PT integrates two independent Schottky dies sharing a common cathode terminal, enabling either paralleled operation for enhanced current capacity or interleaved phase rectification. Layout must maintain symmetrical trace lengths and thermal paths between anode terminals to ensure balanced current sharing. The TO-247AD package's isolated metal tab allows direct heatsink mounting without insulating hardware, but polarity marking must be observed to avoid reverse connection of either anode relative to the shared cathode.

What is the reverse leakage current of MBR3050PT at elevated temperature?

At rated 50V reverse voltage and 125°C junction temperature, the MBR3050PT exhibits a maximum reverse leakage current (I_R) of 15 mA per diode. This value is confirmed in the electrical specifications table and represents worst-case thermal stress behavior. Leakage remains well below levels that would cause thermal runaway in properly designed circuits, but designers should verify total system standby loss and consider parallel diode derating if multiple MBR3050PT units operate in shared thermal zones.