Taiwan Semiconductor Corporation MBR3060CT

Overview

MBR3060CT from Taiwan Semiconductor is a 30A, 60V dual-die Schottky barrier rectifier in TO-220AB package, featuring 0.77V max forward voltage at 15A/25°C, 200A surge current capability, and junction-to-case thermal resistance of 1.0°C/W. It serves as a high-efficiency output rectifier in DC-DC converters and switching power supplies.

For engineers reviewing the MBR3060CT datasheet, MBR3060CT pinout, MBR3060CT application, or MBR3060CT equivalent, key selection criteria include its 60V repetitive peak reverse voltage, low conduction loss at high current, AEC-Q101 qualification option (MBR3060CTH), and thermal performance under forced-air or heatsink-mounted conditions.

Technical Context

This dual-common-cathode Schottky rectifier integrates two independent 30A diodes in a single TO-220AB thermally optimized package. Its guard ring structure provides overvoltage protection, while the matte tin-plated leads ensure solderability per J-STD-002 and whisker resistance per JESD 201 Class 2.

The device operates across -55°C to +150°C junction temperature range with 10,000 V/μs critical dv/dt rating. At 125°C, reverse leakage remains ≤10 mA per diode at rated 60V VR, supporting stable operation in thermally demanding industrial and automotive power stages.

Key Specifications

Pinout & Package

Package: TO-220AB - Thermally enhanced plastic case with isolated mounting tab, UL 94V-0 rated molding compound, and matte tin-plated leads. Mounting torque ≤0.56 N·m. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-30CPH06 and ON Semiconductor MBR3060CT, the Taiwan Semiconductor MBR3060CT offers superior thermal resistance (1.0°C/W vs. 1.2°C/W) and tighter IR control at high temperature, making it preferable for thermally constrained or high-reliability industrial deployments.

Availability

MBR3060CT is available at Aetrix Electronics and suitable for switching mode power supplies, automotive DC-DC converters, and industrial embedded power systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for MBR3060CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and automotive markets since 1979.

The MBR30xxCT series targets high-current Schottky rectification in energy-efficient power conversion, emphasizing thermal robustness, surge resilience, and AEC-Q101 readiness for mission-critical applications.

FAQ

What is the maximum junction temperature rating for MBR3060CT?

The MBR3060CT has a maximum junction temperature (TJ) rating of +150°C, with operational range from -55°C to +150°C. This wide thermal envelope supports use in under-hood automotive environments and sealed industrial enclosures where ambient temperatures exceed 85°C. The device maintains specified electrical performance-including 200 µA max reverse leakage at 25°C and ≤10 mA at 125°C-within this full range. Derating curves in the official datasheet confirm 30A average current capability down to 100°C case temperature.

Is MBR3060CT pin-compatible with other parts in the MBR30xxCT family?

Yes, all MBR30xxCT variants-including MBR3035CT, MBR3045CT, MBR3050CT, MBR3060CT, MBR3090CT, MBR30100CT, and MBR30150CT-share identical TO-220AB package dimensions, pinout, and mechanical footprint. The only differences are VRRM rating and corresponding forward voltage characteristics; therefore, MBR3060CT can be substituted for any other member in the family on the same PCB without layout changes, provided voltage derating and thermal design accommodate the specific variant's VF and RθJC values.

Does MBR3060CT have AEC-Q101 qualification?

The standard MBR3060CT is not AEC-Q101 qualified; however, the MBR3060CTH variant-identical in all electrical and mechanical specifications except for qualification status-is fully AEC-Q101 certified. The "H" suffix denotes qualification to the full AEC-Q101 stress test schedule, including HTGB, HTRB, TCT, and mechanical shock testing. Automotive designers requiring qualification must specify MBR3060CTH, which uses the same TO-220AB package and shares identical marking layout and date coding format.

What is the forward voltage specification for MBR3060CT at full rated current?

Per the official Taiwan Semiconductor datasheet, MBR3060CT specifies a maximum forward voltage (VF) of 0.77 V at IF = 15 A and TJ = 25°C. At full 30 A average current and TJ = 25°C, VF is not explicitly guaranteed in the datasheet; however, typical curves show VF ≈ 0.85 V under those conditions. At elevated junction temperature (125°C), VF drops to approximately 0.67 V at 15 A, reflecting the negative temperature coefficient inherent to Schottky diodes-a key factor in thermal stability during sustained high-current operation.

How does the guard ring feature improve reliability in MBR3060CT?

The guard ring in MBR3060CT is a diffused p-type region surrounding the active Schottky junction, engineered to reduce electric field crowding at the silicon edge. This structure prevents premature edge breakdown under high reverse bias or fast dv/dt transients, thereby increasing the device's effective VRRM margin and improving long-term reliability in noisy power environments. It directly contributes to the specified 10,000 V/μs critical rate of rise of off-state voltage and supports stable operation during voltage spikes in SMPS flyback and LLC resonant converter topologies.