Diodes Incorporated MBR30H100CT-E1

Overview

MBR30H100CT-E1 from Diodes Incorporated is a high-voltage dual common-cathode Schottky rectifier in TO-220-3 (2) package, rated for 100 V reverse voltage, 15 A average forward current per diode leg (30 A total), and 0.8 V max forward voltage at 15 A and +25°C. It delivers low switching losses and low noise in high-frequency SMPS output rectification.

For engineers reviewing the MBR30H100CT-E1 datasheet, MBR30H100CT-E1 pinout, MBR30H100CT-E1 application, or MBR30H100CT-E1 equivalent, key selection criteria include its 175°C junction temperature rating, 250 A non-repetitive surge capability, guard-ring stress protection, RoHS-compliant lead-free finish, and thermal resistance of 2.0°C/W (junction-to-case).

Technical Context

This dual Schottky rectifier integrates two independent anode terminals (A1, A2) sharing a common cathode (K), enabling synchronous or interleaved rectification in center-tapped or dual-output topologies. Its low VF and absence of minority-carrier storage minimize conduction and switching losses.

The device operates up to +175°C junction temperature with 10,000 V/µs dv/dt rating and exhibits <4.5 µA reverse leakage at 25°C - critical for maintaining efficiency in high-frequency converters where parasitic capacitance and recovery noise must be tightly controlled.

Key Specifications

Pinout & Package

MBR30H100CT-E1 uses the TO-220-3 (2) plastic package with isolated tab (non-electrical), 1.95 g mass, UL 94V-0 flammability rating, and matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual Schottky rectifier applications.

Compared with VS-30CPH01-M3 and MBR30H100CT, the MBR30H100CT-E1 uniquely balances RoHS/Green compliance, TO-220-3 mechanical compatibility, and verified 2.0°C/W thermal resistance - making it optimal for new industrial and telecom designs requiring audit-ready environmental certification and standardized assembly processes.

Availability

MBR30H100CT-E1 is available at Aetrix Electronics and suitable for server VRM output rectification, industrial 48 V DC-DC converters, and telecom AC-DC front-end designs requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for MBR30H100CT-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

The MBR30H100CT-E1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-frequency switch-mode power supplies where low forward voltage, high surge tolerance, and thermal robustness are essential.

FAQ

Is MBR30H100CT-E1 suitable for synchronous rectification replacement?

No - it is a passive Schottky rectifier, not a synchronous rectifier controller or MOSFET driver. While it replaces conventional silicon diodes in freewheeling or output rectification roles, it cannot substitute for active gate-driven MOSFETs in synchronous buck topologies. Its value lies in eliminating reverse recovery loss without requiring control circuitry.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF(AV) = 15 A per leg at TC = +162°C. For continuous 30 A total conduction, the case temperature must not exceed +162°C. At higher ambient temperatures, thermal derating is required - e.g., at TC = +100°C, IF(AV) per leg drops to ~22 A based on Figure 4 in DS36965 Rev. 3-2.

Does the TO-220-3 (2) package have an electrically isolated tab?

Yes - the TO-220-3 (2) variant used in MBR30H100CT-E1 features an isolated metal tab (pin 2 is cathode; tab is not connected to any terminal). This allows direct heatsink mounting without insulating hardware, unlike TO-220AB variants where the tab is tied to pin 2.

How does the guard-ring structure improve reliability in high-dv/dt applications?

The integrated guard ring mitigates electric field crowding at the PN junction periphery, preventing premature avalanche breakdown during rapid voltage transitions. In practice, this enables stable operation at 10,000 V/µs - critical in LLC resonant converters and ZVS circuits where diode turn-off dv/dt exceeds 5,000 V/µs.