Taiwan Semiconductor Corporation MBR30L45CT

Overview

MBR30L45CT from Taiwan Semiconductor is a 30A, 45V dual-die low forward-voltage Schottky barrier rectifier in TO-220AB package, designed for high-efficiency DC/DC conversion and SMPS output rectification with 0.55V max VF at 15A/25°C and 220A IFSM surge rating. It features guard ring overvoltage protection and AEC-Q101 qualification option (H-suffix).

For engineers reviewing the MBR30L45CT datasheet, MBR30L45CT pinout, MBR30L45CT application, or MBR30L45CT equivalent, key selection criteria include its 45V VRRM rating, dual-common-cathode configuration, 1.0°C/W RθJC thermal resistance, TJ = –55°C to +150°C operating range, and compatibility with high-frequency switching topologies requiring low conduction loss.

Technical Context

This dual-die Schottky rectifier integrates two independent 30A/45V diodes sharing a common cathode terminal, enabling synchronous or parallel output rectification in center-tapped or full-wave configurations. Its low 0.55V forward voltage drop at 15A reduces conduction losses, while the guard ring structure enhances ruggedness against transient overvoltage events.

The device operates across –55°C to +150°C junction temperature, supported by 1.0°C/W junction-to-case thermal resistance and TO-220AB mechanical construction rated UL 94V-0. It delivers 220A non-repetitive surge current capability (8.3ms half-sine) and maintains <400µA reverse leakage at 25°C and rated VR.

Key Specifications

Pinout & Package

Package: TO-220AB, 3-terminal plastic case with matte tin-plated leads, UL 94V-0 molding compound, and polarity marked on body. Mounting torque ≤0.56 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBR30L45CT, VS-30CPH045 offers marginally better thermal resistance but requires larger PCB real estate and lacks automotive qualification, while MBR3045CT matches footprint and rating but omits guard ring protection and AEC-Q101 compliance-making MBR30L45CT the preferred choice for ruggedized or automotive-grade designs.

Availability

MBR30L45CT is available at Aetrix Electronics and suitable for switching mode power supplies, DC/DC converters, and laptop adapters requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.

Supply support for MBR30L45CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability rectifiers, TVS devices, and MOSFETs for industrial and automotive markets.

The MBR30LxxCT series was developed to deliver low-VF, high-surge Schottky rectifiers with enhanced ruggedness for next-generation high-frequency, high-efficiency power conversion in automotive and computing applications.

FAQ

What is the maximum junction temperature rating for the MBR30L45CT?

The MBR30L45CT has a maximum junction temperature (TJ MAX) of +150°C and a minimum of –55°C, enabling operation in harsh thermal environments such as enclosed industrial power supplies or under-hood automotive systems. This rating is validated per JEDEC test conditions and supports derating curves up to 30A average current at case temperatures ≤100°C. The MBR30L45CT's thermal design must account for its 1.0°C/W RθJC to maintain safe TJ under full load.

Does the MBR30L45CT have AEC-Q101 qualification?

The base MBR30L45CT is not AEC-Q101 qualified; however, the pin-compatible MBR30L45CTH variant is explicitly qualified per AEC-Q101 Rev D for stress testing including HTGB, HTRB, and temperature cycling. This qualification applies only to parts marked with the "H" suffix and is documented in Taiwan Semiconductor's official qualification reports. The MBR30L45CT itself remains suitable for industrial applications where automotive reliability standards are not mandated.

What is the forward voltage specification for the MBR30L45CT at elevated temperature?

At 15A and TJ = 125°C, the MBR30L45CT exhibits a typical forward voltage of 0.50V - lower than its 25°C value of 0.55V max - due to the negative temperature coefficient of Schottky diodes. This behavior improves thermal stability in high-temperature operation but requires verification against worst-case conduction loss budgets. The MBR30L45CT datasheet confirms this value under pulsed test conditions (PW = 0.3ms).

How is the dual-diode configuration arranged in the MBR30L45CT TO-220AB package?

The MBR30L45CT integrates two independent Schottky diodes with a shared cathode connected to the metal tab (case), while Anode 1 and Anode 2 are brought out to separate leads (Lead 1 and Lead 2). This common-cathode configuration supports center-tapped transformer rectification or dual-output supplies. Polarity is marked on the device body, and the tab must be electrically isolated unless used as the circuit ground reference.

What packaging and ordering options are available for the MBR30L45CT?

The MBR30L45CT is supplied in TO-220AB package, packed 50 units per tube. The "x" in the ordering code denotes voltage rating (e.g., MBR30L45CT = 45V), and the optional "H" suffix (MBR30L45CTH) indicates AEC-Q101 qualification. Tape-and-reel packaging is not offered for this part; all variants ship in tubes. Lead finish is matte tin per J-STD-002, ensuring reliable solderability.