Diodes Incorporated MBR5200VPBTR-E1

Overview

MBR5200VPBTR-E1 from Diodes Incorporated is a high-voltage Schottky rectifier in DO-27 (Type YJ) package, rated for 200 V peak reverse voltage, 5 A average forward current, and 0.95 V max forward voltage at +25°C. It delivers low switching losses and low noise in high-frequency power converters such as AC/DC adapters and DC/DC modules.

For engineers reviewing the MBR5200VPBTR-E1 datasheet, MBR5200VPBTR-E1 pinout, MBR5200VPBTR-E1 application, or MBR5200VPBTR-E1 equivalent, key selection criteria include its 100 A non-repetitive surge rating, +150°C junction temperature capability, guard-ring stress protection, RoHS-compliant lead-free finish, and thermal resistance of 5 °C/W (junction-to-case).

Technical Context

This Schottky rectifier uses a planar epitaxial construction with integrated guard-ring structure to suppress edge breakdown under high-voltage stress. Its low VF and fast recovery enable efficient operation in switch-mode power supplies operating above 100 kHz.

The device operates across –65°C to +150°C junction temperature range and exhibits 0.5 mA max reverse leakage at 200 V and +25°C. Its 10,000 V/µs dv/dt rating supports robust performance in noisy, fast-switching topologies without snubbers.

Key Specifications

Pinout & Package

MBR5200VPBTR-E1 is housed in DO-27 (Type YJ) molded plastic package (16.22 mm × 14.61 mm × 3.50 mm), featuring matte tin–annealed copper leads, UL 94V-0 flammability rating, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.

Compared with VS-MBR5200TR-M3 and SB5200-E3/54, MBR5200VPBTR-E1 offers superior thermal resistance (5 °C/W vs. ≥30 °C/W), tighter VF tolerance, and higher IFSM-making it optimal for high-power density, high-reliability power conversion where thermal headroom and transient robustness are prioritized.

Availability

MBR5200VPBTR-E1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC/DC converters, medical imaging systems, and automotive ADAS camera modules requiring stable component supply and long-term lifecycle support.

Supply support for MBR5200VPBTR-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MBR5200 series belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial, computing, and automotive applications where low VF, high surge tolerance, and thermal robustness are essential.

FAQ

Is MBR5200VPBTR-E1 suitable for use in automotive under-hood environments?

Yes. Its –65°C to +150°C operating junction temperature range, guard-ring protected junction, and RoHS-compliant Pb-free finish meet baseline requirements for under-hood auxiliary power supplies. While not AEC-Q101 qualified out-of-box, Diodes offers PPAP-capable variants upon request for automotive programs.

What is the recommended PCB layout for thermal management of MBR5200VPBTR-E1?

Use ≥25 mm² of 2-oz copper on the anode and cathode pads, connected via multiple thermal vias (≥6×0.3 mm) to inner-layer ground or power planes. Maintain ≥1.5 mm clearance from adjacent high-dv/dt traces to prevent EMI coupling and ensure reliable guard-ring performance.

Does MBR5200VPBTR-E1 require a snubber circuit in high-frequency SMPS designs?

No snubber is required under typical conditions. Its 10,000 V/µs dv/dt rating and low stored charge enable clean turn-off in hard-switched topologies up to 500 kHz. Snubbers may still be needed only if layout-induced ringing exceeds 200 V peak reverse stress.

How does the DO-27 (Type YJ) package differ mechanically from standard DO-27?

DO-27 (Type YJ) has a shorter body length (16.22 mm vs. 25.4 mm), narrower width (14.61 mm vs. 5.3 mm), and optimized lead geometry for automated placement. It retains identical electrical specs but reduces board area by ~40%, supporting higher power density in modern compact power modules.