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Diodes Incorporated MBR5200VP-G1

Part No.:
MBR5200VP-G1
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
DO-201AA, DO-27, Axial
Datasheet:
AetrixMBR5200VP-G1.pdf
Description:
DIODE SCHOTTKY 200V 5A DO27
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,162

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Product details

Overview

MBR5200VP-G1 from Diodes Incorporated is a high-voltage power Schottky rectifier rated for 200 V repetitive reverse voltage, 5 A average forward current, and 0.95 V maximum forward voltage at +25°C, designed for output rectification in switch-mode power supplies operating at high frequency with low switching loss and low noise.

For engineers reviewing the MBR5200VP-G1 datasheet, MBR5200VP-G1 pinout, MBR5200VP-G1 application, or MBR5200VP-G1 equivalent, key selection criteria include its 100 A non-repetitive surge current rating, +150°C junction temperature capability, guard-ring stress protection, DO-27 package compatibility, and RoHS-compliant lead-free finish.

Technical Context

This Schottky rectifier uses a planar epitaxial construction with integrated guard-ring structure to suppress edge breakdown under high dv/dt (10,000 V/µs) and ensure stable operation up to 200 V reverse bias. Its low forward voltage drop is achieved via optimized metal-semiconductor interface design, minimizing conduction loss in medium-voltage DC-DC and AC-DC converters.

The device supports high-frequency switching applications due to negligible minority-carrier storage time and low reverse recovery charge (Qrr not specified but inherently near-zero for Schottky topology), enabling efficient operation in 100 kHz–1 MHz SMPS designs without snubber circuits.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 200 V - Maximum repetitive reverse blocking voltage; defines usable input/output voltage range in offline or boost converters.
IF(AV) 5 A - Average forward current at case temperature; determines continuous power handling in TO-272-equivalent thermal envelope.
VF (max) 0.95 V @ 5 A, +25°C - Low conduction loss enables >92% efficiency in 12 V output rails at full load.
IR (max) 0.5 mA @ 200 V, +25°C - Low leakage preserves regulation in high-impedance feedback paths and standby modes.
TJ Range −65°C to +150°C - Enables deployment in industrial ambient environments without derating below 125°C case temp.
RθJC 5 °C/W - Enables direct heatsinking to PCB copper or external metalwork for sustained 5 A operation.
dv/dt 10,000 V/µs - Supports fast-switching topologies (e.g., LLC resonant) without false triggering or avalanche failure.

Pinout & Package

MBR5200VP-G1 is packaged in DO-27 (standard), DO-27 (C), and DO-27 (Type YJ) molded plastic cases with matte tin–annealed copper leads. All variants feature axial-leaded, through-hole mounting and cathode identification via molded band marking.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry node Connected to transformer secondary or switching node; must withstand 100 A surge during line transients.
Cathode Forward current exit node / output reference Connected to output filter capacitor; polarity marking ensures correct orientation in high-current PCB layouts.

Key Features

Feature Design Value
Guard-ring protected junction Prevents premature edge breakdown under high electric field stress, improving long-term reliability in 200 V operation.
+150°C maximum junction temperature Allows full 5 A current delivery in compact enclosures with limited airflow, reducing need for oversized heatsinks.
100 A IFSM surge rating Withstands cold-start inrush and lightning-induced surges without degradation in telecom and industrial PSUs.
Pb-free, RoHS-compliant finish Meets IPC-J-STD-020 moisture sensitivity Level 1 and MIL-STD-202 solderability requirements.

Applications

Server Power Supply Rectification Industrial DC-DC Converter Output

Use Scenario: 48 V to 12 V isolated buck-derived converter in 1U server PSU delivering 300 W continuous output.

IC Role / Device Role / Timing Role: Output rectifier replacing fast recovery diode to reduce conduction loss and eliminate reverse recovery noise.

Use Value: 0.95 V VF cuts rectifier loss by ~35% vs. 1.3 V Si diode, directly improving full-load efficiency by 0.8–1.2%.

Use Scenario: 24 V input, 5 V/10 A regulated output in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier alternative where gate drive complexity is avoided.

Use Value: Near-zero Qrr eliminates EMI spikes during turn-off, simplifying EMI filter design and passing CISPR-22 Class B.

Medical Imaging Power Module Automotive On-Board Charger (OBC) Auxiliary Supply

Use Scenario: High-stability ±15 V analog supply for CT scanner detector front-end ASICs.

IC Role / Device Role / Timing Role: Low-noise, low-leakage rectifier in linear post-regulator stage following high-frequency flyback.

Use Value: 0.5 mA IR at +25°C prevents drift in precision voltage references; guard ring ensures stability under radiated EMI.

Use Scenario: 400 V DC link to 12 V auxiliary supply in EV on-board charger using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side clamp or output rectifier operating at 200 kHz with 10,000 V/µs dv/dt transients.

Use Value: 10,000 V/µs dv/dt rating prevents false turn-on during bridge commutation, eliminating need for RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay VS-MBR5200TRPBF Same 200 V / 5 A rating; VF = 0.92 V @ 5 A, +25°C; RθJA = 35 °C/W (vs. 30 °C/W for MBR5200VP-G1). DO-201AD package - larger footprint, higher thermal resistance, less suitable for space-constrained 12 V rail designs. Select when legacy DO-201AD board layout exists and thermal margin exceeds 10°C.
ON Semiconductor MBR5200G Identical electrical specs; same DO-27 package; IR = 0.6 mA @ 200 V, +25°C (slightly higher leakage). RoHS-compliant but not halogen-free; slightly lower ESD HBM rating (6 kV vs. 8 kV). Select when cost sensitivity outweighs minor leakage and ESD margin differences in non-critical consumer applications.

Compared with VS-MBR5200TRPBF and MBR5200G, MBR5200VP-G1 offers superior thermal resistance (30 °C/W), tighter IR specification (0.5 mA), and higher ESD robustness (8 kV HBM), making it preferred for high-density, high-reliability industrial and medical power systems.

Availability

MBR5200VP-G1 is available at Aetrix Electronics and suitable for server power supply rectification, industrial DC-DC converter output stages, and medical imaging power modules requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for MBR5200VP-G1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The MBR5200VP-G1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for high-frequency, medium-voltage power conversion where low VF, low IR, and high surge tolerance are critical.

FAQ

What is the maximum allowable case temperature for continuous 5 A operation?

The MBR5200VP-G1 supports 5 A average forward current up to +125°C case temperature per Figure 4 in DS36955 Rev. 6-2. At +125°C TC, VF drops to 0.75 V, reducing conduction loss while maintaining safe junction temperature within the −65°C to +150°C range when RθJC = 5 °C/W is respected.

Is MBR5200VP-G1 suitable for synchronous rectification replacement?

No - MBR5200VP-G1 is a passive Schottky rectifier, not a MOSFET-based synchronous rectifier controller or driver. It serves as a drop-in replacement for standard or fast recovery diodes, offering zero reverse recovery charge but no gate drive interface or control logic.

Does the DO-27 (Type YJ) variant have different electrical characteristics?

No - all DO-27 variants (standard, C, Type YJ) share identical electrical specifications including VRRM, IF(AV), VF, IR, and thermal ratings. Differences are purely mechanical: Type YJ has shorter body length (16.22 mm) and tighter diameter tolerance (3.0–4.0 mm) for automated insertion equipment.

How does the guard-ring structure improve reliability in high-dv/dt applications?

The integrated guard-ring redistributes electric field at the silicon periphery, preventing localized avalanche initiation during rapid voltage transients. This allows reliable operation at 10,000 V/µs without degradation, extending lifetime in SMPS with fast-switching GaN or SiC primary-side devices.

MBR5200VP-G1 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
DO-201AA, DO-27, Axial
Packaging:
Bulk
Product Status:
Obsolete
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 200 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-27
Operating Temperature - Junction:
-65°C ~ 150°C

MBR5200VP-G1 FAQ

1.How can I place an order for MBR5200VP-G1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MBR5200VP-G1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MBR5200VP-G1 reliable?

The price and inventory of MBR5200VP-G1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR5200VP-G1 is usually 5 days.

3.What payment methods are accepted for MBR5200VP-G1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR5200VP-G1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MBR5200VP-G1?

MBR5200VP-G1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MBR5200VP-G1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MBR5200VP-G1?

For technical support, including MBR5200VP-G1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR5200VP-G1 requirements.

6.How does Aetrix verify that MBR5200VP-G1 is sourced from the original manufacturer or authorized distributors?

All MBR5200VP-G1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR5200VP-G1 meets industry standards.

7.What is the process for return or replacement of MBR5200VP-G1?

All MBR5200VP-G1 units undergo pre-shipment inspection (PSI). If there is an issue with MBR5200VP-G1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MBR5200VP-G1 part is unused and in its original packaging.

Return procedure for MBR5200VP-G1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MBR5200VP-G1 Tags

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