Diodes Incorporated MBR5200VPTR-G1

Overview

MBR5200VPTR-G1 from Diodes Incorporated is a high-voltage power Schottky rectifier designed for medium-voltage, high-frequency switching applications including SMPS output rectification and power management circuits. It delivers 5 A average forward current at +25°C, exhibits 0.95 V max forward voltage at 5 A, supports 200 V peak repetitive reverse voltage, and operates up to +150°C junction temperature in DO-27 package.

For engineers reviewing the MBR5200VPTR-G1 datasheet, MBR5200VPTR-G1 pinout, MBR5200VPTR-G1 application, or MBR5200VPTR-G1 equivalent, key selection criteria include forward voltage drop at rated current, thermal resistance (RθJC = 5 °C/W), surge current capability (100 A non-repetitive), reverse leakage (0.5 mA @ 200 V), and RoHS-compliant lead-free packaging with guard-ring stress protection.

Technical Context

This Schottky rectifier uses a planar epitaxial construction with integrated guard-ring structure to suppress edge breakdown and improve ruggedness under transient overvoltage conditions. Its low forward voltage and fast recovery characteristics minimize conduction and switching losses in high-frequency DC-DC converters and offline SMPS secondary-side rectification.

The device is optimized for operation at junction temperatures up to +150°C, with thermal resistance from junction to case rated at 5 °C/W-enabling efficient heat transfer to heatsinks or PCB copper in compact power designs. Reverse leakage remains tightly controlled at ≤1.0 mA up to +125°C, supporting stable performance across industrial temperature ranges.

Key Specifications

Pinout & Package

MBR5200VPTR-G1 is housed in a DO-27 axial-leaded plastic package with cathode indicated by a band marking. The device has two terminals: anode and cathode. No internal gating or control pins are present-it functions as a passive unidirectional power rectifier.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.

Compared with VS-MBR5200 and MBR5200CT, the MBR5200VPTR-G1 offers optimal balance of axial-leaded DO-27 compatibility, industry-standard marking, and guaranteed RoHS compliance-making it ideal for high-volume, space-constrained SMPS designs where footprint and sourcing consistency are critical.

Availability

MBR5200VPTR-G1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, medical imaging modules, and telecom remote radio units requiring stable component supply and long-term manufacturability.

Supply support for MBR5200VPTR-G1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The MBR5200VPTR-G1 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for efficiency-critical, high-frequency power conversion in industrial, computing, and communications infrastructure.

FAQ

What is the maximum allowable case temperature for continuous 5 A operation?

The MBR5200VPTR-G1 supports IF(AV) = 5 A up to +150°C junction temperature. For continuous 5 A operation, case temperature must be limited to ≤145°C to maintain safe thermal margin, assuming RθJC = 5 °C/W and no additional ambient rise. Derating curves in Figure 4 confirm 5 A is sustainable at TC = 140°C.

Does this part have a built-in thermal shutdown or protection circuit?

No. The MBR5200VPTR-G1 is a passive Schottky rectifier with no integrated protection circuitry. Overtemperature protection must be implemented externally via system-level thermal monitoring, current limiting, or foldback regulation-consistent with all standard discrete rectifiers.

Can MBR5200VPTR-G1 replace a standard silicon rectifier like 1N5408 in a 24 V power supply?

Yes, but only if reverse voltage requirements are ≤200 V and layout accommodates DO-27 axial leads. At 5 A, its 0.95 V VF yields ~0.5 W less dissipation than 1N5408's ~1.1 V VF-reducing heatsink size. However, its higher IR at elevated temperature requires verification in high-ambient designs.

Is the DO-27 (C) variant electrically identical to the DO-27 used in MBR5200VPTR-G1?

Yes. The DO-27 (C) and standard DO-27 share identical electrical specifications, thermal ratings, and pinout. The "(C)" denotes a minor mechanical variant with slightly longer body length (19.5–20.5 mm vs. 25.4 mm min), but both use the same die, junction structure, and marking scheme-ensuring full functional interchangeability.