Diodes Incorporated MBR5H150VP-G1

Overview

MBR5H150VP-G1 from Diodes Incorporated is a high-voltage Schottky rectifier optimized for switch-mode power supply output stages, featuring 150 V peak reverse voltage, 5 A average forward current, 0.92 V max forward voltage at 5 A and 25°C, 8 µA max reverse leakage at 25°C, and +175°C junction temperature rating. It operates in DO-27 (Green) package with matte tin–annealed copper leadframe and UL 94V-0 molded plastic housing.

For engineers reviewing the MBR5H150VP-G1 datasheet, MBR5H150VP-G1 pinout, MBR5H150VP-G1 application, or MBR5H150VP-G1 equivalent, key selection criteria include low forward voltage for efficiency-critical DC/DC outputs, high surge current tolerance (125 A), thermal robustness up to +175°C, RoHS-compliant green packaging, and cathode-marked DO-27 mechanical compatibility.

Technical Context

This Schottky rectifier uses a guard-ring–protected silicon die architecture to suppress edge breakdown under high dv/dt stress (10,000 V/µs), enabling stable operation in high-frequency SMPS topologies. Its low forward voltage drop and minimal reverse recovery charge eliminate switching losses typical of PN junction diodes.

The device is rated for 5 A average forward current at TC = +150°C and supports non-repetitive surge currents up to 125 A (half-wave, 60 Hz), making it suitable for transient-heavy power rails. Thermal resistance is specified as 10°C/W (junction-to-case) with proper heatsinking.

Key Specifications

Pinout & Package

MBR5H150VP-G1 is housed in a DO-27 (Green) axial-leaded package with cathode identified by a band marking. The package features matte tin–annealed copper leads, UL 94V-0 flame-retardant molding compound, and moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.

Compared with SB5150-TB and SS5P15L, MBR5H150VP-G1 uniquely balances DO-27 mechanical compatibility, green RoHS compliance, and 0.92 V VF-making it optimal for cost-sensitive, through-hole industrial power supplies needing UL 94V-0 and +175°C operation.

Availability

MBR5H150VP-G1 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial DC/DC converters, and test equipment power supplies requiring stable component supply, long-term manufacturability, and RoHS-compliant green packaging.

Supply support for MBR5H150VP-G1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MBR5H150 belongs to Diodes' high-voltage Schottky rectifier product line, engineered specifically for efficiency-critical, high-frequency power conversion in industrial, computing, and instrumentation applications where low VF, high TJ, and robust surge capability are mandatory.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The MBR5H150VP-G1 has a maximum junction temperature of +175°C. This allows operation at full 5 A load with case temperatures up to +150°C, provided thermal resistance from junction to case remains ≤10°C/W. Designers must use ≥1.5 cm² copper pour on the anode/cathode pads and avoid excessive trace length to maintain this limit under continuous load.

Is MBR5H150VP-G1 compatible with lead-free soldering processes?

Yes. MBR5H150VP-G1 features matte tin–annealed copper leads and is qualified for lead-free reflow per JEDEC J-STD-020. Its DO-27 package withstands peak temperatures up to +260°C for 10 seconds. The device is RoHS compliant (2011/65/EU) and carries UL 94V-0 flammability rating, meeting IPC-J-STD-006B plating requirements.

How does the guard-ring structure improve reliability in high-dv/dt applications?

The integrated guard ring mitigates electric field crowding at the silicon periphery, preventing premature avalanche breakdown during rapid voltage transients. This enables reliable operation at dv/dt rates up to 10,000 V/µs-critical in high-frequency SMPS where ringing and overshoot stress conventional Schottky diodes-and extends lifetime under repeated surge conditions.

Can MBR5H150VP-G1 replace standard PN rectifiers in existing designs?

Yes, with verification. Its 150 V VRRM and 5 A IF(AV) match common 1N5408-class replacements, but its Schottky architecture eliminates reverse recovery time and reduces VF by ~0.3 V. Designers must confirm that reduced forward drop doesn't cause control loop instability in voltage-mode controllers and that thermal interface accommodates slightly higher junction temperatures under identical power dissipation.