Taiwan Semiconductor Corporation MBR60100PT
- Part No.:
- MBR60100PT
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-247-3
- Datasheet:
-
MBR60100PT.pdf
- Description:
- DIODE ARR SCHOT 100V 60A TO247AD
- Quantity:
- Payment:

- Shipping:

Inventory:6,456
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MBR60100PT from Taiwan Semiconductor is a 60A, 100V dual-die Schottky barrier rectifier in TO-247AD (TO-3P) package, featuring 0.98V forward voltage at 60A/25°C, 420A surge capability, and 1.2°C/W junction-to-case thermal resistance for high-efficiency DC-DC conversion and SMPS output stages.
For engineers reviewing the MBR60100PT datasheet, MBR60100PT pinout, MBR60100PT application, or MBR60100PT equivalent, key selection criteria include peak reverse voltage rating, forward voltage at full rated current, thermal resistance, surge current handling, and AEC-Q101 qualification status where automotive reliability is required.
Technical Context
This device integrates two independent Schottky diodes in a single TO-247AD package with common cathode configuration, enabling dual-channel synchronous rectification or parallel operation. Its 100V VRRM, 150°C maximum junction temperature, and 10,000 V/μs dV/dt rating support robust operation in high-frequency switching environments.
The MBR60100PT delivers low conduction loss via optimized metal-semiconductor junction design, with reverse leakage limited to 10 mA at 125°C and rated VR - critical for maintaining efficiency in thermally constrained power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - Maximum repetitive reverse blocking voltage per diode; defines safe operating limit in bridge or freewheeling configurations |
| IF | 60 A - Continuous average forward current per diode; determines steady-state power delivery capacity |
| IFSM | 420 A - Non-repetitive surge current (8.3 ms half-sine); supports inrush and transient overload resilience |
| VF @ 60A, 25°C | 0.98 V - Forward voltage drop at full rated current; directly impacts conduction loss and thermal design |
| RθJC | 1.2 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing for 60A continuous operation |
| TJ max | 150 °C - Maximum allowable junction temperature; sets upper boundary for thermal management margin |
| IR @ 100V, 125°C | 10 mA - Reverse leakage current at max rated voltage and elevated temperature; affects standby power loss |
Pinout & Package
Package: TO-247AD (TO-3P), 3-terminal molded case with matte tin-plated leads, UL 94V-0 rated compound, and polarity marking on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (Lead 1) | First diode anode | Independent input terminal for first Schottky die; used in dual-output or interleaved topologies |
| Cathode (Lead 2) | Common cathode | Shared cathode connection for both diodes; simplifies PCB layout in center-tapped or dual-winding designs |
| Anode 2 (Lead 3) | Second diode anode | Independent input terminal for second Schottky die; enables symmetrical current sharing or redundancy |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring structure | Provides edge termination for enhanced overvoltage ruggedness and stable breakdown behavior under transient stress |
| AEC-Q101 qualification (H suffix variant) | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards |
| Low IR at high TJ | 10 mA max reverse leakage at 125°C and 100V - reduces standby losses in energy-sensitive applications |
| High dV/dt immunity | 10,000 V/μs critical rate of rise - prevents false turn-on in fast-switching converters with steep voltage transients |
| Halogen-free construction | Complies with IEC 61249-2-21 - meets environmental compliance requirements for RoHS and WEEE programs |
Applications
| Server Power Supply | Industrial DC-DC Converter |
|---|---|
Use Scenario: Primary output rectification in 1U server PSUs operating at 100–500 kHz switching frequency with forced-air cooling. IC Role / Device Role / Timing Role: Dual-die Schottky rectifier providing low-loss, high-current output path with shared cathode simplifying busbar routing. Use Value: 0.98 V VF at 60A minimizes conduction loss; 1.2°C/W RθJC enables compact heatsink integration without derating. | Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V industrial DC-DC modules with wide ambient temperature range (-40°C to +85°C). IC Role / Device Role / Timing Role: High-reliability power diode handling continuous 60A load with surge tolerance for motor drive startup transients. Use Value: 420A IFSM withstands repeated inrush events; 150°C TJ max supports operation in unventilated enclosures. |
| Flat Panel TV Power Stage | Automotive Onboard Charger (OBC) Auxiliary Supply |
Use Scenario: +24V auxiliary rail generation in LED-backlit LCD TVs using active clamp forward topology. IC Role / Device Role / Timing Role: Freewheeling diode in high-frequency transformer secondary with tight layout constraints. Use Value: TO-247AD package allows direct mounting to aluminum chassis for passive cooling; low VF improves light-load efficiency critical for Energy Star compliance. | Use Scenario: Isolated auxiliary supply (12V/3A) powering control circuitry in AEC-Q101-compliant OBC modules. IC Role / Device Role / Timing Role: Output rectifier qualified to automotive reliability standards with guard ring protection against load dump transients. Use Value: AEC-Q101 qualification ensures long-term stability under vibration, thermal shock, and humidity; 10 mA IR at 125°C maintains low no-load consumption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-60CPH10 | Same 60A/100V rating, TO-247AC package, but single-die construction; higher VF (1.05V @ 60A) and lower IFSM (350A) | Lacks dual-die configuration - unsuitable for shared-cathode or dual-channel layouts requiring independent anodes | Select when board space permits discrete placement and dual-anode functionality is unnecessary |
| ON Semiconductor MBR60100CT | Identical dual-die TO-220AB package, same VRRM/IF, but lower thermal performance (RθJC = 2.0°C/W) and no AEC-Q101 option | TO-220AB limits power density and thermal dissipation - not viable for >40A continuous in compact enclosures | Select only for cost-sensitive, non-automotive, low-power-density applications with adequate airflow |
Compared with VS-60CPH10 and MBR60100CT, the MBR60100PT uniquely combines dual-anode topology, superior thermal resistance (1.2°C/W), and AEC-Q101 availability - making it optimal for space-constrained, high-reliability, and thermally demanding rectification tasks.
Availability
MBR60100PT is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and flat panel TV power stages requiring stable component supply, long-lifecycle assurance, and automotive-grade reliability options.
Supply support for MBR60100PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1993.
The MBR60100PT belongs to TSC's high-current Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC power conversion systems operating up to 150°C junction temperature.
FAQ
What is the maximum junction temperature rating for the MBR60100PT?
The MBR60100PT has a maximum junction temperature (TJ) rating of +150°C, verified across its full operating voltage and current range. This specification allows reliable operation in thermally demanding environments such as enclosed power supplies and automotive under-hood auxiliary circuits. The device's 1.2°C/W junction-to-case thermal resistance supports effective heat transfer to external heatsinks when mounted with proper torque (≤1.13 N·m). Thermal derating curves in the official datasheet confirm usable current capacity down to 25°C ambient at full 60A rating.
Does the MBR60100PT have AEC-Q101 qualification?
The MBR60100PT itself is not AEC-Q101 qualified; however, the AEC-Q101 variant is designated MBR60100PTH (with 'H' suffix), as confirmed in Taiwan Semiconductor's ordering information. Both share identical electrical and thermal specifications, but only the 'H' version undergoes full automotive stress testing including temperature cycling, high-temperature reverse bias, and ESD validation. For automotive applications requiring formal qualification, MBR60100PTH must be specified - the base MBR60100PT remains suitable for industrial and commercial use where AEC-Q101 is not mandated.
What is the forward voltage drop of the MBR60100PT at 60A and 125°C?
The MBR60100PT datasheet does not specify forward voltage (VF) at 60A and 125°C - only at 25°C (0.98 V) and 30A/125°C (no value provided for 60A/125°C). However, typical VF increases ~0.1–0.15 V per 50°C rise; extrapolation suggests ~1.05–1.10 V at 60A/125°C. Designers should consult the "Typical Forward Characteristics" curve (Fig.4) in the official datasheet for precise interpolation and apply appropriate thermal margin. Derating guidelines recommend limiting average current to ~45A at 125°C case temperature to maintain safe junction temperatures.
How is the dual-die configuration implemented in the MBR60100PT package?
The MBR60100PT integrates two independent Schottky diode dies in a single TO-247AD (TO-3P) package with three external terminals: Anode 1 (Lead 1), Common Cathode (Lead 2), and Anode 2 (Lead 3). This configuration enables either dual-output rectification (e.g., ±12V rails) or paralleled operation for increased current capacity while sharing a single cathode node. Unlike center-tapped or dual-common packages, this layout avoids internal wire bonding between anodes, preserving isolation and allowing independent voltage referencing. Polarity marking on the device body identifies the common cathode terminal.
What is the reverse leakage current of the MBR60100PT at rated voltage and elevated temperature?
The MBR60100PT exhibits a maximum reverse leakage current (IR) of 10 mA per diode at 100 V reverse voltage and 125°C junction temperature, as specified in the Electrical Specifications table. At 25°C and 100 V, leakage is limited to 1000 µA max. This low high-temperature leakage contributes to minimal standby power loss in always-on systems like TV auxiliary supplies or industrial controllers. The guard ring structure helps stabilize leakage behavior under voltage stress, ensuring predictable performance across temperature and voltage extremes.
MBR60100PT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 60A
- Voltage - Forward (Vf) (Max) @ If:
- 980 mV @ 60 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 mA @ 100 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD (TO-3P)
MBR60100PT FAQ
1.How can I place an order for MBR60100PT through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR60100PT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBR60100PT reliable?
The price and inventory of MBR60100PT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR60100PT is usually 5 days.
3.What payment methods are accepted for MBR60100PT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR60100PT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBR60100PT?
MBR60100PT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBR60100PT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBR60100PT?
For technical support, including MBR60100PT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR60100PT requirements.
6.How does Aetrix verify that MBR60100PT is sourced from the original manufacturer or authorized distributors?
All MBR60100PT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR60100PT meets industry standards.
7.What is the process for return or replacement of MBR60100PT?
All MBR60100PT units undergo pre-shipment inspection (PSI). If there is an issue with MBR60100PT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR60100PT part is unused and in its original packaging.
Return procedure for MBR60100PT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBR60100PT Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

