Taiwan Semiconductor Corporation MBR745

Overview

MBR745 from Taiwan Semiconductor is a 7.5A, 45V Schottky barrier rectifier in TO-220AC package, designed for high-efficiency DC/DC conversion with low forward voltage (0.57V @ 7.5A, 125°C), high surge capability (150A IFSM), and AEC-Q101 qualification option. It serves as a primary output rectifier in automotive-grade power supplies.

For engineers reviewing the MBR745 datasheet, MBR745 pinout, MBR745 application, or MBR745 equivalent, key selection criteria include its 45V VRRM rating, thermal resistance (R_θJC = 5°C/W), junction temperature range (–55°C to +150°C), and compatibility with high-frequency switching topologies requiring low conduction loss.

Technical Context

The MBR745 operates as a single-die, unidirectional Schottky rectifier with guard ring overvoltage protection and matte tin-plated leads compliant with J-STD-002 solderability. Its 150A non-repetitive surge rating supports transient load conditions in SMPS designs.

Thermal performance is defined by R_θJA = 15°C/W (free air) and R_θJC = 5°C/W, enabling direct heatsink mounting via the case tab. Reverse leakage remains ≤100 µA at 25°C and ≤15 mA at 125°C under rated 45V reverse bias.

Key Specifications

Pinout & Package

Package: TO-220AC - Three-terminal, through-hole molded plastic package with insulated backside; case tab is cathode-connected and electrically isolated per UL 94V-0 compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-75SQ045N and MBR745G, the MBR745 offers identical electrical ratings and package but provides optional AEC-Q101 qualification (as MBR745H), making it uniquely suited for dual-sourcing in automotive programs requiring validated reliability evidence.

Availability

MBR745 is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial SMPS output stages, and LED driver power stages requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for MBR745 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The MBR7xx series is part of TSC's high-reliability Schottky rectifier product line, engineered specifically for high-efficiency, high-temperature power conversion in automotive and industrial environments.

FAQ

What is the maximum junction temperature rating for the MBR745?

The MBR745 has a maximum junction temperature (T_J) of +150°C, verified per absolute maximum ratings in the official datasheet. This rating allows reliable operation in under-hood automotive applications and enclosed industrial power supplies. Thermal design must ensure that actual junction temperature stays within this limit under worst-case load and ambient conditions. The MBR745's R_θJC of 5°C/W supports effective heatsinking to maintain safe TJ.

Is the MBR745 pin-compatible with other parts in the MBR7xx family?

Yes - all MBR7xx devices, including MBR745, share identical TO-220AC package dimensions, pinout (anode/cathode/tab), and mechanical mounting interface. Voltage variants (e.g., MBR735, MBR760) differ only in VRRM and associated electrical parameters, not physical layout. The MBR745 can be substituted within the same footprint without PCB changes, provided system-level voltage and thermal margins remain valid.

Does the MBR745 have AEC-Q101 qualification?

The base MBR745 is not AEC-Q101 qualified; however, the MBR745H variant is explicitly qualified per AEC-Q101 standard. Ordering code "H" denotes qualification, confirmed in TSC's ordering information table. For automotive applications requiring formal qualification evidence, specify MBR745H - the MBR745 itself lacks this certification and should be used only in non-automotive or pre-qualification evaluation contexts.

What is the forward voltage drop of the MBR745 at full rated current and high temperature?

The MBR745 exhibits a typical forward voltage (V_F) of 0.57 V at 7.5 A and 125°C junction temperature, as specified in the Electrical Specifications table. This value reflects real-world conduction loss under thermally stressed conditions and is critical for calculating power dissipation and thermal design. At room temperature (25°C), V_F is higher (~0.72 V @ 7.5 A), confirming the negative temperature coefficient typical of Schottky diodes.

How does the MBR745 compare to silicon PN rectifiers in terms of efficiency?

The MBR745 delivers significantly higher efficiency than comparable silicon PN rectifiers due to its Schottky architecture: zero minority-carrier storage enables near-instantaneous switching, and its low V_F (0.57 V @ 125°C) cuts conduction losses by ~40–60% versus a typical 1.1 V silicon diode at same current. This directly improves system efficiency, especially in high-frequency SMPS where switching and conduction losses dominate. The MBR745's efficiency advantage is most pronounced above 50 kHz and at elevated temperatures.