Taiwan Semiconductor Corporation MBR750H

Overview

MBR750H from Taiwan Semiconductor is an AEC-Q101-qualified 7.5A, 50V Schottky barrier rectifier in TO-220AC package, featuring low forward voltage (0.75V @ 7.5A, 25°C), high surge current capability (150A), and junction-to-case thermal resistance of 5°C/W. It serves as a primary output rectifier in automotive-grade DC-DC converters.

For engineers reviewing the MBR750H datasheet, MBR750H pinout, MBR750H application, or MBR750H equivalent, key selection criteria include its 50V V_RRM, 10mA reverse leakage at 125°C, guard ring overvoltage protection, RoHS/halogen-free compliance, and suitability for high-efficiency switching power supplies requiring AEC-Q101 qualification.

Technical Context

This single-die Schottky rectifier uses platinum-silicide or similar barrier metallization to achieve low VF and fast recovery. Its guard ring structure enhances ruggedness against transient overvoltage events, while the TO-220AC case enables direct heatsink mounting with ≤0.56 N·m torque.

Thermal performance is defined by R_θJC = 5°C/W and R_θJA = 15°C/W, supporting continuous 7.5A conduction at T_J ≤ 150°C when properly heatsinked. Reverse leakage remains ≤10mA at rated V_RRM and 125°C junction temperature.

Key Specifications

Pinout & Package

Package: TO-220AC - Insulated case with single mounting hole, matte tin-plated leads, UL 94V-0 molding compound, and polarity marking on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-75CTQ050 and MBR750, the MBR750H uniquely combines automotive qualification, single-die 7.5A rating, and TO-220AC compatibility-making it optimal for space-constrained, thermally demanding automotive DC-DC stages where certification and proven reliability are non-negotiable.

Availability

MBR750H is available at Aetrix Electronics and suitable for automotive power conversion, industrial SMPS, and LED driver applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for MBR750H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The MBR7xxH series belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-reliability automotive power conversion where low VF, surge robustness, and thermal stability are critical.

FAQ

What is the maximum junction temperature rating for MBR750H?

The MBR750H has a maximum junction temperature (T_J) rating of +150°C. This specification defines the upper thermal limit for safe continuous operation. Exceeding this temperature risks permanent degradation of the Schottky barrier and increased reverse leakage. Proper heatsinking-leveraging its 5°C/W junction-to-case thermal resistance-is essential to maintain T_J within limits under full 7.5A load. The MBR750H datasheet confirms this value across all operating conditions.

Is MBR750H pin-compatible with non-AEC-Q101 versions like MBR750?

Yes, the MBR750H is mechanically and electrically pin-compatible with the standard MBR750. Both use the TO-220AC package with identical lead configuration, polarity marking, and thermal tab connection to the cathode. The sole functional difference is AEC-Q101 qualification-no changes to PCB layout, soldering profile, or circuit design are required when upgrading from MBR750 to MBR750H for automotive applications.

What does the 'H' suffix signify in MBR750H?

The 'H' suffix in MBR750H explicitly denotes AEC-Q101 qualification per the Taiwan Semiconductor ordering nomenclature. This means the MBR750H has undergone rigorous stress testing-including temperature cycling, humidity bias, and high-temperature operating life-to validate reliability for automotive electronic systems. It is not merely a packaging or screening code; it reflects full compliance with the AEC-Q101 standard, distinguishing it from commercial-grade variants like MBR750.

How does the guard ring feature benefit MBR750H in real-world circuits?

The guard ring in the MBR750H improves edge termination uniformity around the Schottky junction, significantly enhancing ruggedness against localized electric field crowding. In practice, this raises the device's dV/dt rating to 10,000 V/µs and suppresses premature avalanche breakdown during fast-switching transients-such as those seen in high-frequency SMPS or load-dump events in automotive systems. This directly increases field reliability and reduces failure-in-time (FIT) rates.

What is the reverse leakage current of MBR750H at elevated temperature?

The MBR750H exhibits a maximum reverse leakage current (I_R) of 10 mA at 125°C and rated 50V reverse voltage. At 25°C, leakage is limited to 100 µA. This temperature-dependent behavior is critical for thermal design: in high-ambient environments (e.g., under-hood automotive), the 10 mA leakage contributes measurable power loss and must be factored into worst-case thermal modeling alongside forward conduction loss to ensure T_J stays within the 150°C limit.