Taiwan Semiconductor Corporation MBRAD20200H

Overview

MBRAD20200H from Taiwan Semiconductor is a 20 A, 200 V Schottky barrier rectifier in ThinDPAK package, designed for low-loss freewheeling and reverse battery protection in automotive DC/DC converters. It features 0.90 V forward voltage at 20 A/25°C, 300 A surge capability, AEC-Q101 qualification, and operates up to 150°C junction temperature.

For engineers reviewing the MBRAD20200H datasheet, MBRAD20200H pinout, MBRAD20200H application, or MBRAD20200H equivalent, key selection criteria include its 200 V repetitive peak reverse voltage, 2.0 °C/W junction-to-lead thermal resistance with ideal heatsink, moisture sensitivity level 1 rating, and suitability for high-frequency inverter and car lighting circuits requiring robust surge handling and RoHS/halogen-free compliance.

Technical Context

The MBRAD20200H is a single-die Schottky rectifier optimized for low forward voltage drop and fast switching in automotive power systems. Its 0.79 V typical VF at 20 A/125°C enables high efficiency under elevated temperature conditions, while the 295 pF junction capacitance at 4 V supports operation in high-frequency DC/DC topologies.

Thermal performance is defined by R_θJL = 2.0 °C/W (with ideal heatsink) and R_θJA = 11.5 °C/W on a 2" × 3" × 0.25" aluminum plate. The device uses matte tin-plated leads compliant with J-STD-002 and meets JESD201 Class 2 whisker resistance.

Key Specifications

Pinout & Package

Package: ThinDPAK (JEDEC TO-252 variation AE), surface-mount, single anode/cathode configuration with cathode band marking. Weight: 0.196 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-20BQ020PBF and MURB2020CT, the MBRAD20200H uniquely combines AEC-Q101 qualification, surface-mount ThinDPAK packaging with integrated thermal pad, and Schottky-level VF performance - making it the only option qualified for under-hood SMT deployment in modern 12 V/24 V automotive power systems.

Availability

MBRAD20200H is available at Aetrix Electronics and suitable for automotive DC/DC converters, reverse battery protection circuits, and car lighting systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for MBRAD20200H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The MBRAD20200H belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive electrical systems where thermal robustness and SMT manufacturability are essential.

FAQ

What is the marking code printed on the MBRAD20200H device body?

The MBRAD20200H is laser-marked with "20200" on the top surface of the ThinDPAK package. This 5-digit code identifies the device as a 20 A, 200 V Schottky rectifier and matches the ordering code suffix. The marking is located adjacent to the cathode band and remains legible after standard reflow soldering processes.

Is the MBRAD20200H suitable for use in synchronous rectification topologies?

No - the MBRAD20200H is a passive Schottky rectifier, not a MOSFET-based synchronous rectifier controller or driver. It functions as a unidirectional freewheeling or output rectifier in asynchronous converters. For synchronous rectification, discrete MOSFETs or dedicated SR controllers must be used; the MBRAD20200H serves only as the diode replacement in such circuits.

Does the MBRAD20200H have a specified reverse recovery time (trr)?

No - the MBRAD20200H is a Schottky barrier diode and exhibits majority-carrier conduction with no minority-carrier storage delay. Therefore, trr is not specified in the datasheet. Its switching behavior is governed by junction capacitance (295 pF) and series resistance, enabling near-zero reverse recovery loss in high-frequency applications.

What is the recommended PCB pad layout for the MBRAD20200H ThinDPAK package?

Taiwan Semiconductor specifies a suggested pad layout in datasheet revision A2303: a 5.92 mm × 4.57 mm thermal pad with 0.70 mm wide outer terminals and 0.25 mm solder mask clearance. The exposed tab (Pin 3) must be connected to a large copper pour for thermal dissipation; minimum 2 oz copper and 4 thermal vias (0.3 mm diameter) are recommended for optimal RθJA performance.

Can the MBRAD20200H replace a standard PN-junction rectifier like the 1N5408 in an existing design?

Yes - the MBRAD20200H can replace higher-voltage PN rectifiers in many cases, but only if the circuit operates below 200 V reverse bias and benefits from lower VF. Unlike the 1N5408 (3 A, 1000 V), the MBRAD20200H offers 20 A current and 200 V rating with far lower conduction loss. However, its lower VRRM requires verification against system transients, and its SMT ThinDPAK footprint differs from through-hole packages.