Taiwan Semiconductor Corporation MBRF1060H

Overview

MBRF1060H from Taiwan Semiconductor is a 10A, 60V AEC-Q101 qualified Schottky barrier rectifier in ITO-220AC package, featuring low forward voltage (0.80 V max at 10A, 25°C), high surge current capability (150 A), and junction-to-case thermal resistance of 3°C/W. It serves as a primary output rectifier in automotive-grade DC-DC converters.

For engineers reviewing the MBRF1060H datasheet, MBRF1060H pinout, MBRF1060H application, or MBRF1060H equivalent, key selection criteria include its 60 V repetitive peak reverse voltage, 10 mA reverse leakage at 125°C, AEC-Q101 qualification, guard ring over-voltage protection, and compatibility with high-efficiency SMPS designs requiring low conduction loss.

Technical Context

This single-die Schottky rectifier operates with a maximum junction temperature of 150°C and supports continuous forward current up to 10 A at case temperatures ≤75°C. Its 60 V V_RRM rating enables use in 48 V automotive bus-derived power rails and intermediate DC-DC stages.

The device exhibits 0.80 V typical forward voltage drop at 10 A and 25°C, dropping to 0.70 V at 125°C - enabling reduced conduction losses versus silicon diodes. Reverse leakage remains ≤10 mA at 125°C under rated 60 V reverse bias, supporting stable operation in thermally demanding environments.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated through-hole package with isolated metal tab, UL 94V-0 molding compound, matte tin-plated leads, and 0.56 N·m maximum mounting torque. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBRF1060H, VS-MBR1060CT offers lower forward voltage but requires board-level redesign for dual-diode routing, while MBR1060CT matches pinout and function but omits automotive qualification - making MBRF1060H the sole AEC-Q101-compliant single-die 60 V/10 A Schottky in ITO-220AC.

Availability

MBRF1060H is available at Aetrix Electronics and suitable for automotive power modules, industrial SMPS designs, and USB-C PD adapters requiring stable component supply with AEC-Q101 compliance and thermal robustness.

Supply support for MBRF1060H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, and protection components.

The MBRF10xx series was developed specifically for high-reliability automotive and industrial power conversion, emphasizing AEC-Q101 qualification, low thermal resistance, and robust surge immunity in insulated packages.

FAQ

What does the 'H' suffix in MBRF1060H signify?

The 'H' suffix in MBRF1060H indicates full AEC-Q101 qualification per Rev D standards, including stress testing for high-temperature operating life, temperature cycling, and unbiased highly accelerated stress test. This distinguishes MBRF1060H from non-H variants like MBRF1060, which lack automotive qualification. The MBRF1060H meets all requirements for under-hood automotive applications where reliability under thermal and mechanical stress is critical.

Is MBRF1060H pin-compatible with standard TO-220AC rectifiers?

Yes, MBRF1060H uses the ITO-220AC package - a variant of TO-220AC with electrically insulated metal tab - and shares identical lead spacing, hole pattern, and mounting dimensions. It fits standard TO-220AC footprints and heatsinks, but the isolation allows direct tab mounting without insulating hardware. Always verify thermal pad clearance and voltage isolation requirements in your layout before substitution.

What is the maximum continuous forward current for MBRF1060H at 100°C case temperature?

Per the forward current derating curve in the MBRF1035–MBRF10200 datasheet, MBRF1060H supports 7.5 A continuous forward current at 100°C case temperature. This value is derived from linear derating starting at 10 A at 75°C, with full derating to zero at 150°C. Adequate heatsinking is required to maintain case temperature ≤100°C for sustained 7.5 A operation.

Does MBRF1060H have a guard ring, and what function does it serve?

Yes, MBRF1060H incorporates a guard ring structure as confirmed in the official Taiwan Semiconductor datasheet. This feature enhances edge termination robustness, preventing premature avalanche breakdown at the die periphery during transient overvoltage events such as load dump or inductive switching spikes. It directly improves reliability in automotive and industrial systems exposed to electrical surges.

How does the thermal performance of MBRF1060H compare to MBRF10200?

MBRF1060H has a junction-to-case thermal resistance (R_θJC) of 3°C/W, while MBRF10200 is rated at 4°C/W. This 25% lower thermal resistance reflects optimized die attachment and internal construction for lower-voltage variants, enabling more efficient heat transfer from junction to heatsink. For designs operating near thermal limits, MBRF1060H delivers superior thermal headroom at equivalent current levels compared to the 200 V version.