Diodes Incorporated MBRF20200CT-JT

Overview

MBRF20200CT from Diodes Incorporated is a 20A dual common-cathode Schottky barrier rectifier in ITO-220AB (Type BR) package, rated for 200V peak reverse voltage, 0.89V max forward voltage at 10A/25°C, and 0.1mA max leakage current at 200V/25°C; used for polarity protection and recirculating diode functions in DC power supplies and motor drive circuits.

For engineers reviewing the MBRF20200CT datasheet, MBRF20200CT pinout, MBRF20200CT application, or MBRF20200CT equivalent, key selection criteria include per-leg forward current rating (10A), thermal resistance (5°C/W junction-to-case), surge capability (170A IFSM), RoHS/Green compliance, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual Schottky rectifier integrates two independent 10A legs sharing a common cathode terminal, enabling synchronous half-wave rectification or bidirectional clamping. Its guard ring die construction enhances transient immunity, while low VF minimizes conduction losses in high-frequency switching converters.

Designed for operation up to +175°C junction temperature, it supports industrial and automotive applications where thermal robustness and fast recovery (no minority carrier storage) are critical. The ITO-220AB package provides improved thermal performance over standard TO-220AB via optimized leadframe geometry and lower RθJC (5°C/W vs. 3°C/W).

Key Specifications

Pinout & Package

Package: ITO-220AB (Type BR), 3-terminal molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated, halogen/antimony-free "Green" compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-20CPH02-M3, MBRF20200CT offers smaller ITO-220AB footprint and AEC-Q101 qualification but higher RθJC; versus MURB2020CT, it delivers 29% lower VF and zero Qrr-critical for high-frequency, low-loss designs.

Availability

MBRF20200CT is available at Aetrix Electronics and suitable for DC power supply input stages, automotive body control modules, motor drive freewheeling paths, and telecom 48V backup systems requiring stable component supply and long-term lifecycle support.

Supply support for MBRF20200CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the US.

MBRF20200CT belongs to Diodes' high-current Schottky rectifier product line, engineered specifically for efficiency-critical power conversion in automotive, industrial, and telecom infrastructure where low VF, high surge tolerance, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum junction temperature and how does it affect derating?

The MBRF20200CT has a maximum junction temperature of +175°C. At ambient temperatures above 25°C, average forward current must be linearly derated-e.g., at 100°C ambient, IO drops to ~6.5A per leg. Derating curves are provided in Figure 4 of DS36513 Rev. 7-2, based on heatsink thermal resistance and mounting conditions.

Is MBRF20200CT pin-compatible with MBR20200CT?

Yes-both share identical ITO-220AB (MBRF) and TO-220AB (MBR) pinouts: Anode 1, Anode 2, Common Cathode. However, MBRF20200CT uses the insulated ITO-220AB package (non-conductive mounting tab), while MBR20200CT's TO-220AB tab is electrically connected to the cathode and requires isolation hardware.

Does this device require a heatsink in typical operation?

Yes-continuous operation above ~3A per leg requires a heatsink. With RθJC = 5°C/W and RθCA ≈ 20°C/W (typical PCB mount), dissipating 6W (at 10A × 0.6V) raises junction temperature by ~150°C above ambient. A minimum 15 cm² aluminum heatsink is recommended for full 10A/leg operation at 50°C ambient.

How does the guard ring structure improve reliability?

The integrated guard ring surrounds the active die region to suppress edge breakdown under high dv/dt or ESD events. It increases the device's ability to survive repetitive transients (e.g., ISO 7637-2 pulses) without parameter shift or catastrophic failure-verified per AEC-Q101 stress tests including TLP and HBM.