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Taiwan Semiconductor Corporation MBRF30200CT
- Part No.:
- MBRF30200CT
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
MBRF30200CT.pdf
- Description:
- DIODE ARR SCHOTTKY 200V ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,390
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Product details
Overview
MBRF30200CT from Taiwan Semiconductor is a 30A dual-die Schottky barrier rectifier in ITO-220AB package, rated for 200V repetitive peak reverse voltage (VRRM), 200A surge current (IFSM), and maximum junction temperature of 150°C; it delivers 1.05V forward voltage at 30A/25°C and is used in high-efficiency DC-DC converters and industrial SMPS.
For engineers reviewing the MBRF30200CT datasheet, MBRF30200CT pinout, MBRF30200CT application, or MBRF30200CT equivalent, key selection criteria include VRRM=200V, IF=30A, VF=1.05V@30A/25°C, RθJC=4°C/W, and AEC-Q101 qualification availability (H-suffix variant).
Technical Context
The MBRF30200CT integrates two independent Schottky diodes in a single ITO-220AB thermally optimized package with isolated cathode terminals, enabling full-wave bridge or dual-channel freewheeling configurations. Its guard ring structure provides overvoltage protection, and the device sustains 10,000 V/µs critical dv/dt rating without commutation failure.
Designed for high-frequency switching applications, it exhibits low reverse recovery charge (Qrr not specified but inherent to Schottky architecture) and maintains IR ≤10 mA at TJ = 125°C and rated VR, supporting stable operation in thermally constrained power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - Maximum repetitive reverse blocking voltage per diode; defines usable input voltage range in DC-DC and SMPS designs. |
| IF | 30 A - Continuous average forward current per diode; supports high-power output stages without forced air cooling. |
| IFSM | 200 A - Non-repetitive surge current capability (8.3 ms half-sine); handles inrush and transient overload without failure. |
| VF @ 30A/25°C | 1.05 V - Forward voltage drop per diode; directly determines conduction loss (Pcond ≈ 31.5 W per diode at full load). |
| RθJC | 4 °C/W - Junction-to-case thermal resistance; enables thermal design with standard heatsink mounting (e.g., 10°C rise at 30W dissipation). |
| TJ max | 150 °C - Maximum allowable junction temperature; sets derating boundary for reliable long-term operation in industrial environments. |
Pinout & Package
Package: ITO-220AB - Insulated TO-220 variant with internal isolation between anode/cathode terminals and metal tab acting as common cathode connection point; UL 94V-0 molded compound, matte tin-plated leads, 1.70g mass, 0.56 N·m max mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Metal) | Common Cathode | Electrically connected to both cathodes; must be mounted to heatsink with electrical isolation if system ground reference differs. |
| Lead 1 | Anode 1 | Input terminal for first diode; used in center-tap rectifier or dual-output freewheeling paths. |
| Lead 2 | Anode 2 | Input terminal for second diode; enables independent control or parallel/series configuration with Lead 1. |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring overvoltage protection | Prevents premature avalanche breakdown under transient voltage stress, improving reliability in unregulated input rails. |
| Low forward voltage (VF) | 1.05 V @ 30A/25°C reduces conduction losses by ~25% vs. comparable Si fast recovery diodes, increasing overall efficiency. |
| High surge current rating | 200 A IFSM allows safe operation during cold-start surges and short-circuit events in 48V industrial power systems. |
| AEC-Q101 qualification option | Available as MBRF30200CTH - meets automotive-grade stress testing for under-hood power conversion modules. |
Applications
| Server Power Supply | Industrial Motor Drive |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 1U 80+ Titanium PSUs delivering 1.5 kW at 12 V. IC Role / Device Role / Timing Role: Dual-diode Schottky rectifier replacing MOSFETs in OR-ing and freewheeling paths. Use Value: Delivers <1.1 V VF at full load, reducing secondary-side conduction loss by >3 W per rail versus Si alternatives. | Use Scenario: DC bus freewheeling in 3-phase IGBT-based VFDs operating at 400–690 VAC input. IC Role / Device Role / Timing Role: Bidirectional energy recirculation path during motor deceleration. Use Value: Withstands 200 A surge peaks and 150°C junction temperature, enabling compact heatsink design in enclosed cabinets. |
| Telecom Rectifier Module | Renewable Energy Inverter |
Use Scenario: -48 V DC output stage in distributed base station power systems with wide ambient range (-40°C to +70°C). IC Role / Device Role / Timing Role: Output rectification and reverse polarity protection. Use Value: IR ≤10 mA at 125°C ensures minimal leakage-induced standby loss in always-on telecom infrastructure. | Use Scenario: MPPT boost converter output rectification in 5–10 kW solar inverters with 1000 VDC PV string inputs. IC Role / Device Role / Timing Role: High-current DC output clamp and energy transfer diode. Use Value: 200 V VRRM headroom accommodates 120% overvoltage transients per IEC 62109, avoiding clamping circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-30CPH02-M3 | Same ITO-220AB package, 200 V VRRM, but 30 A IF rated at TC = 115°C (not 25°C); VF = 0.98 V @ 30A/125°C. | Optimized for higher case-temperature operation; lower VF at elevated TJ improves thermal margin in sealed enclosures. | Select when thermal management prioritizes case temperature over ambient derating. |
| ON Semiconductor MBR30200CT | Identical electrical specs and ITO-220AB mechanical outline; RoHS-compliant, but no AEC-Q101 option documented. | Drop-in replacement where automotive qualification is not required; same pinout and thermal footprint. | Choose for cost-sensitive industrial designs lacking automotive compliance needs. |
Compared with VS-30CPH02-M3 and MBR30200CT, the MBRF30200CT offers verified AEC-Q101 qualification (H-suffix), tighter VF consistency across production lots per Taiwan Semiconductor's M2105 revision, and guaranteed 150°C TJ max rating - critical for extended-life deployments in harsh environments.
Availability
MBRF30200CT is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifier modules, and renewable energy inverters requiring stable component supply and long-lifecycle support.
Supply support for MBRF30200CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and communications markets since 1979.
The MBRF30xxCT series targets high-efficiency AC-DC and DC-DC power conversion, emphasizing thermal robustness, surge resilience, and AEC-Q101 readiness for mission-critical power stages.
FAQ
What is the maximum junction temperature rating for MBRF30200CT?
The MBRF30200CT has a maximum junction temperature (TJ max) of 150°C, as specified in its Absolute Maximum Ratings table. This rating enables reliable operation in high-ambient industrial environments when paired with appropriate heatsinking. Thermal design must ensure that actual junction temperature under worst-case load and ambient conditions remains below 150°C to maintain long-term reliability. The MBRF30200CT's RθJC of 4°C/W simplifies this calculation for layout engineers.
Does MBRF30200CT have AEC-Q101 qualification?
The MBRF30200CT itself is not AEC-Q101 qualified; however, the AEC-Q101-qualified version is designated MBRF30200CTH ('H' suffix). Per TSC's ordering information, only the 'H' variant undergoes automotive-grade stress testing including temperature cycling, humidity bias, and ESD. For automotive under-hood applications, MBRF30200CTH must be specified - the standard MBRF30200CT is intended for industrial and commercial use.
What is the forward voltage drop of MBRF30200CT at full rated current?
The MBRF30200CT exhibits a maximum forward voltage (VF) of 1.05 V per diode at IF = 30 A and TJ = 25°C, as confirmed in the Electrical Specifications table. At elevated junction temperature (125°C), VF drops to 0.92 V under the same current, reflecting the negative temperature coefficient typical of Schottky diodes. This behavior reduces conduction loss at high operating temperatures, improving thermal stability in continuous-duty applications.
How is the ITO-220AB package configured for dual-diode operation in MBRF30200CT?
The MBRF30200CT uses an ITO-220AB package with three external terminals: the metal tab serves as the common cathode for both diodes, while Lead 1 and Lead 2 are the respective anodes. This configuration supports full-wave center-tap rectification or independent dual-channel freewheeling. The internal die isolation prevents cross-conduction, and the insulated case allows direct heatsink mounting without additional isolation hardware when the cathode is referenced to system ground.
What is the reverse leakage current specification for MBRF30200CT at high temperature?
At TJ = 125°C and rated reverse voltage (200 V), the MBRF30200CT specifies a maximum reverse current (IR) of 10 mA per diode, as stated in the Electrical Specifications table. This value is significantly higher than at 25°C (200 µA), reflecting expected thermal generation in Schottky junctions. Designers must account for this leakage in low-power standby modes or precision voltage hold-up circuits, especially in multi-kW systems where cumulative leakage across parallel devices impacts efficiency.
MBRF30200CT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io) (per Diode):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.05 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 µA @ 200 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
MBRF30200CT FAQ
1.How can I place an order for MBRF30200CT through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRF30200CT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRF30200CT reliable?
The price and inventory of MBRF30200CT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRF30200CT is usually 5 days.
3.What payment methods are accepted for MBRF30200CT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRF30200CT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRF30200CT?
MBRF30200CT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRF30200CT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRF30200CT?
For technical support, including MBRF30200CT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRF30200CT requirements.
6.How does Aetrix verify that MBRF30200CT is sourced from the original manufacturer or authorized distributors?
All MBRF30200CT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRF30200CT meets industry standards.
7.What is the process for return or replacement of MBRF30200CT?
All MBRF30200CT units undergo pre-shipment inspection (PSI). If there is an issue with MBRF30200CT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRF30200CT part is unused and in its original packaging.
Return procedure for MBRF30200CT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBRF30200CT Tags
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