Taiwan Semiconductor Corporation MBRF3050CT

Overview

MBRF3050CT from Taiwan Semiconductor is a 30A dual-die Schottky barrier rectifier in ITO-220AB package, rated for 50V repetitive peak reverse voltage (VRRM), with 0.75V max forward voltage at 15A/25°C and 0.90V max at 30A/25°C, used in high-efficiency DC-DC converters and SMPS secondary-side rectification.

For engineers reviewing the MBRF3050CT datasheet, MBRF3050CT pinout, MBRF3050CT application, or MBRF3050CT equivalent, key selection criteria include VRRM=50V, IF=30A, IFSM=200A, TJ(max)=150°C, and thermal resistance RθJC=4°C/W - all critical for thermal design and surge robustness in compact power supplies.

Technical Context

This dual-die Schottky rectifier integrates two independent anode-cathode junctions in a single ITO-220AB thermally enhanced package, enabling full-wave center-tap or dual-output configurations without external paralleling. Its low VF and absence of minority-carrier recovery eliminate switching losses typical of PN junction diodes.

The device features guard ring protection against transient overvoltage, meets UL 94V-0 flammability rating, and supports mounting torque up to 0.56 N·m. It is rated for operation from –55°C to +150°C junction temperature with 10,000 V/µs dv/dt capability.

Key Specifications

Pinout & Package

Package: ITO-220AB - thermally optimized 3-terminal through-hole package with isolated metal tab (cathode-connected tab), matte tin-plated leads, UL 94V-0 molding compound, and polarity marked on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBRF3050CT, VS-30CTH05-M3 offers better thermal and conduction performance but lacks AEC-Q101 qualification path, while MBR3050CT provides seamless second-source compatibility with no layout or thermal redesign needed.

Availability

MBRF3050CT is available at Aetrix Electronics and suitable for switching mode power supplies, DC-DC converters, and AC adapters requiring stable component supply, consistent thermal performance, and long-term industrial lifecycle support.

Supply support for MBRF3050CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The MBRF30xxCT series was designed specifically for high-current, low-VF secondary-side rectification in compact, high-efficiency power supplies - prioritizing thermal robustness, surge resilience, and manufacturability in automated through-hole assembly.

FAQ

What is the maximum junction temperature rating for MBRF3050CT?

The MBRF3050CT has a maximum junction temperature (TJ(max)) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet (Version M2105). This rating applies across the full operating range and enables reliable use in sealed or fanless enclosures where case temperatures reach 100–120°C. Derating curves confirm usable current down to 70% of rated IF at 125°C case temperature. The MBRF3050CT must be mounted with ≤0.56 N·m torque to maintain thermal interface integrity at this limit.

Does MBRF3050CT support full-wave rectification without external components?

Yes, the MBRF3050CT supports full-wave rectification natively via its dual-anode configuration: Anode 1 and Anode 2 connect independently to opposite ends of a center-tapped transformer secondary, while the shared cathode (metal tab) delivers the rectified output. This eliminates the need for two discrete diodes and associated layout asymmetry. The MBRF3050CT's matched die characteristics ensure balanced conduction and thermal behavior between both legs, critical for ripple reduction in regulated DC outputs.

What is the forward voltage specification for MBRF3050CT at 30A and 125°C?

Per the Taiwan Semiconductor datasheet (Version M2105, Electrical Specifications table), the MBRF3050CT has a maximum forward voltage (VF) of 0.78 V per diode at IF = 30 A and TJ = 125°C. This value reflects real-world hot-operation performance and is essential for calculating worst-case conduction loss (Pcond ≈ 30 A × 0.78 V = 23.4 W total for both diodes). The MBRF3050CT's VF remains stable across temperature due to Schottky barrier physics, unlike PN rectifiers whose VF decreases with rising temperature.

Is MBRF3050CT RoHS and halogen-free compliant?

Yes, the MBRF3050CT is RoHS compliant and halogen-free per IEC 61249-2-21, as explicitly stated in the "Features" section of the Taiwan Semiconductor datasheet (Version M2105). The molding compound meets UL 94V-0 flammability rating, and terminals are matte tin plated per J-STD-002 for solderability. These compliance attributes are certified for the standard MBRF3050CT variant - no "H" suffix required - and apply to all units shipped under this part number.

What is the reverse leakage current of MBRF3050CT at rated voltage and elevated temperature?

At VR = 50 V and TJ = 125°C, the MBRF3050CT exhibits a maximum reverse leakage current (IR) of 15 mA per diode, per the "Electrical Specifications" table in the Taiwan Semiconductor datasheet (Version M2105). This value is significantly higher than the 200 µA maximum at 25°C, reflecting expected thermal generation in Schottky junctions. The MBRF3050CT's leakage remains well within safe limits for 12–48V output rails, contributing <0.75 W total standby dissipation even under worst-case thermal conditions.