Taiwan Semiconductor Corporation MBRF7150H

Overview

MBRF7150H from Taiwan Semiconductor is a 7.5A, 150V AEC-Q101-qualified Schottky barrier rectifier in ITO-220AC package, featuring 1.02V forward voltage at 7.5A/25°C, 150A surge capability, and junction-to-case thermal resistance of 7°C/W. It serves as a high-efficiency output rectifier in automotive-grade DC-DC converters and industrial SMPS.

For engineers reviewing the MBRF7150H datasheet, MBRF7150H pinout, MBRF7150H application, or MBRF7150H equivalent, key selection criteria include its 150V VRRM rating, AEC-Q101 qualification, low VF at high temperature, guard ring–enhanced over-voltage robustness, and ITO-220AC mounting compatibility with standard heatsinks.

Technical Context

This single-die Schottky rectifier uses platinum-silicide or similar barrier metallization to achieve low forward voltage and fast switching with no reverse recovery charge. Its guard ring structure provides enhanced edge termination for stable 150V blocking under transient over-voltage conditions.

The device operates across –55°C to +150°C junction temperature range and delivers 7.5A average forward current with derating above 75°C case temperature. Thermal performance is defined by R_θJC = 7°C/W, enabling direct heatsink mounting without thermal interface material in many applications.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab, UL 94V-0 molding compound, matte tin-plated leads, and 0.56 N·m maximum mounting torque. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-75SQ150 and MBR7150CT, the MBRF7150H uniquely combines AEC-Q101 qualification, insulated ITO-220AC packaging, and guard ring protection-making it the only option among the three qualified for automotive under-hood rectification without added isolation hardware or derating.

Availability

MBRF7150H is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial SMPS outputs, and laptop adapters requiring stable component supply, long-lifecycle support, and AEC-Q101 compliance.

Supply support for MBRF7150H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The MBRF7xxx series targets high-reliability power conversion applications requiring low VF, high surge tolerance, and automotive qualification-designed specifically for next-generation 12V/48V vehicle architectures and ruggedized industrial power supplies.

FAQ

Is MBRF7150H pin-compatible with standard TO-220AC rectifiers?

No, MBRF7150H uses the ITO-220AC package, which features an electrically insulated metal tab. While footprint and lead spacing match TO-220AC, the insulated tab eliminates need for mica washers or sil-pads when mounting to grounded heatsinks-unlike conductive-tab TO-220AC devices such as MBR7150CT or VS-75SQ150. This insulation is integral to the MBRF7150H's mechanical construction.

What is the maximum continuous forward current for MBRF7150H at 100°C case temperature?

Per the forward current derating curve in the MBRF7150H datasheet, the device supports 5.5A continuous forward current at TC = 100°C. Derating begins linearly at 7.5A above TC = 75°C, reaching 0A at TC = 150°C. This reflects thermal limits-not electrical failure-and assumes proper heatsink attachment per 0.56 N·m torque specification.

Does MBRF7150H have a specified reverse recovery time (t_rr)?

No-MBRF7150H is a Schottky barrier rectifier and exhibits no minority-carrier reverse recovery. Its switching behavior is governed solely by junction capacitance (C_J ≈ 200pF at 4V, per Fig.2), resulting in negligible switching loss and no t_rr-related EMI. This distinguishes it from PN-junction fast recovery diodes, which specify t_rr in nanoseconds.

Can MBRF7150H be used in parallel configurations?

Yes, but with current-sharing precautions. The MBRF7150H's positive temperature coefficient of forward voltage (VF decreases as TJ rises) promotes natural current sharing. However, due to ±5% VF variation at 7.5A/25°C, external ballast resistors or matched-layout routing is recommended for >2 devices in parallel to ensure balanced loading and avoid thermal runaway.

What does the "H" suffix in MBRF7150H signify?

The "H" suffix in MBRF7150H indicates full AEC-Q101 qualification per Rev D test requirements-including HTGB (1000h at 150°C), HTRB (1000h at 150°C/VR), and temperature cycling (1000 cycles, –40°C to +150°C). This distinguishes it from the non-H variant (MBRF7150), which shares identical electrical specs but lacks automotive stress validation and associated traceability documentation.