Taiwan Semiconductor Corporation MBRF850CT
- Part No.:
- MBRF850CT
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
MBRF850CT.pdf
- Description:
- DIODE ARR SCHOTT 50V 8A ITO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,956
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MBRF850CT from Taiwan Semiconductor is a dual-die Schottky barrier rectifier in ITO-220AB package, rated for 8 A average forward current, 50 V repetitive peak reverse voltage (VRRM), and 150 A non-repetitive surge current (IFSM), used in high-efficiency DC/DC converters and industrial power adapters.
For engineers reviewing the MBRF850CT datasheet, MBRF850CT pinout, MBRF850CT application, or MBRF850CT equivalent, key selection criteria include its 0.70 V max forward voltage at 4 A/25°C, 10 mA max reverse leakage at 125°C, 6 °C/W junction-to-case thermal resistance, and AEC-Q101 qualification option (MBRF850CTH) for automotive-grade reliability.
Technical Context
This dual-common-cathode Schottky rectifier integrates two independent diode dies in a single ITO-220AB thermally enhanced package, enabling synchronous rectification or dual-output SMPS topologies. Its guard ring structure provides overvoltage protection, and it sustains 10,000 V/µs critical rate of rise of off-state voltage (dv/dt).
The device operates across –55°C to +150°C junction temperature range with UL 94V-0 molding compound and matte tin-plated leads compliant with J-STD-002 solderability. It delivers low conduction loss while maintaining robust surge capability under 8.3 ms half-sine wave stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 50 V - Maximum repetitive reverse blocking voltage per diode; defines usable input voltage headroom in buck or flyback designs |
| IF(AVG) | 8 A - Continuous forward current rating per diode; determines heatsink sizing and derating margin at elevated ambient |
| IFSM | 150 A - Peak non-repetitive surge current; supports cold-start and transient overload conditions without failure |
| VF(max) | 0.70 V @ 4 A, 25°C - Forward voltage drop per diode; directly impacts conduction loss and system efficiency at nominal load |
| IR(max) | 10 mA @ 50 V, 125°C - Reverse leakage per diode at elevated temperature; affects standby power and thermal runaway risk |
| RθJC | 6 °C/W - Junction-to-case thermal resistance; enables accurate thermal modeling when mounted to heatsink with known interface resistance |
Pinout & Package
Package: ITO-220AB - Thermally optimized 3-terminal through-hole package with isolated metal tab (cathode-connected), UL 94V-0 mold compound, and matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (center) | Common Cathode | Electrically connected to both diode cathodes; must be electrically isolated from chassis unless referenced to system ground |
| Lead 1 | Anode 1 | Input terminal for first diode; routed to primary-side switching node or input rail in dual-output configuration |
| Lead 2 | Anode 2 | Input terminal for second diode; enables independent control or parallel operation with Anode 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-cathode die configuration | Enables compact dual-output or interleaved rectification without external cathode tying; reduces PCB trace inductance |
| Guard ring overvoltage protection | Improves ruggedness against voltage transients and line surges without external snubbers in adapter applications |
| 10,000 V/µs dv/dt rating | Prevents false turn-on during fast-switching events in high-frequency SMPS (>100 kHz) and resonant topologies |
| AEC-Q101 qualified variant available | MBRF850CTH meets automotive stress test requirements for under-hood power conversion modules |
Applications
| Server Power Supply | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-density 48 V–12 V intermediate bus converter in rack-mounted servers requiring >94% efficiency at full load. IC Role / Device Role / Timing Role: Dual-anode Schottky rectifier providing synchronous output rectification for two independent 12 V rails. Use Value: 0.70 V VF minimizes conduction loss; 6 °C/W RθJC allows direct mounting to aluminum chassis for passive cooling. | Use Scenario: 24 V input, dual 5 V/3.3 V isolated outputs in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: Common-cathode dual rectifier delivering independent regulation paths with shared thermal path. Use Value: Guard ring and 150 A IFSM withstand motor drive-induced line transients; -55°C to +150°C TJ range supports uncooled cabinet operation. |
| Laptop Adapter | Automotive Infotainment PSU |
Use Scenario: Compact 65 W AC/DC adapter with active clamp flyback topology and tight thermal envelope. IC Role / Device Role / Timing Role: Output rectifier handling combined 20 V/3.25 A and 5 V/3 A outputs via shared cathode. Use Value: Low VF and 8 A rating enable high efficiency at light-to-full load; ITO-220AB footprint fits constrained board area. | Use Scenario: 12 V battery-fed power supply for head unit with EMI-sensitive audio and display subsystems. IC Role / Device Role / Timing Role: Secondary-side rectifier in isolated DC/DC stage powering FPGA and USB-C PD controller. Use Value: AEC-Q101-qualified MBRF850CTH variant ensures reliability under automotive thermal cycling and load dump conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-MBRB850CT | Same ITO-220AB package, 50 V VRRM, 0.72 V VF max @ 4 A, 12 mA IR max @ 125°C | Slightly higher VF and IR; identical thermal and surge ratings | Drop-in replacement where minor efficiency trade-off is acceptable and Vishay sourcing preferred |
| ON Semiconductor MBR850CT | ITO-220AB, 50 V VRRM, 0.75 V VF max @ 4 A, 8 mA IR max @ 125°C, no AEC-Q101 variant | Lower leakage but higher VF; lacks automotive-qualified version | Preferred for cost-sensitive industrial designs where AEC-Q101 is not required |
Compared with MBRF850CT, VS-MBRB850CT offers near-identical performance with marginal VF/IR trade-offs, while MBR850CT trades higher conduction loss for lower leakage but omits automotive qualification-making MBRF850CT optimal where AEC-Q101 compliance or thermal efficiency is prioritized.
Availability
MBRF850CT is available at Aetrix Electronics and suitable for server power supplies, industrial DC/DC converters, and laptop adapters requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for MBRF850CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.
The MBRF835CT–MBRF8150CT family was designed specifically for high-efficiency, high-reliability secondary-side rectification in switched-mode power supplies where low VF, high IFSM, and thermal robustness are critical.
FAQ
What is the maximum junction temperature rating for MBRF850CT?
The MBRF850CT has a maximum junction temperature (TJ) rating of +150°C, with operational range from –55°C to +150°C. This allows reliable use in high-ambient environments such as enclosed power supplies or under-hood automotive modules when properly heatsinked. Thermal design must respect the 6 °C/W junction-to-case resistance to avoid exceeding TJ under full-load conditions.
Is MBRF850CT pin-compatible with other parts in the MBRF8xCT series?
Yes, all MBRF8xCT variants-including MBRF850CT-share identical ITO-220AB package dimensions, pinout, and mechanical mounting. The only differences are VRRM rating (35 V to 150 V) and corresponding VF/IR values. This enables direct substitution during design iteration or voltage-scaling without PCB changes, provided electrical margins remain valid.
Does MBRF850CT have AEC-Q101 qualification?
The standard MBRF850CT is not AEC-Q101 qualified, but the MBRF850CTH variant is explicitly certified to AEC-Q101. Both share identical electrical and thermal specifications; only the H-suffix part undergoes automotive stress testing including temperature cycling, humidity bias, and mechanical shock. For automotive infotainment or body control modules, MBRF850CTH is the required version.
What is the forward voltage specification for MBRF850CT at elevated temperature?
The MBRF850CT has a maximum forward voltage (VF) of 0.70 V at 4 A and 25°C. While VF decreases slightly with rising junction temperature, the datasheet does not specify a guaranteed upper limit above 25°C. Designers should use the 25°C value for worst-case loss calculation, as thermal runaway risk is mitigated by the device's negative temperature coefficient and 150°C TJ limit.
How is the polarity marked on the MBRF850CT package?
The MBRF850CT uses standard ITO-220AB polarity marking: the cathode is connected to the center metal tab, and anode markings appear adjacent to Leads 1 and 2 on the molded body. A white or laser-etched "K" symbol near the tab confirms cathode orientation. Polarity must be verified before soldering, as incorrect mounting creates short-circuit risk due to tab isolation requirements.
MBRF850CT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
MBRF850CT FAQ
1.How can I place an order for MBRF850CT through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRF850CT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRF850CT reliable?
The price and inventory of MBRF850CT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRF850CT is usually 5 days.
3.What payment methods are accepted for MBRF850CT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRF850CT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRF850CT?
MBRF850CT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRF850CT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRF850CT?
For technical support, including MBRF850CT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRF850CT requirements.
6.How does Aetrix verify that MBRF850CT is sourced from the original manufacturer or authorized distributors?
All MBRF850CT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRF850CT meets industry standards.
7.What is the process for return or replacement of MBRF850CT?
All MBRF850CT units undergo pre-shipment inspection (PSI). If there is an issue with MBRF850CT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRF850CT part is unused and in its original packaging.
Return procedure for MBRF850CT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBRF850CT Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

