Taiwan Semiconductor Corporation MBRF860CT

Overview

MBRF860CT from Taiwan Semiconductor is a dual-die Schottky barrier rectifier in ITO-220AB package, rated for 8 A average forward current, 60 V repetitive peak reverse voltage (V_RRM), and 150 A non-repetitive surge current (I_FSM). It delivers low forward voltage drop (0.70 V max at 4 A, 25°C) and operates up to 150°C junction temperature, targeting high-efficiency DC/DC converters and industrial power adapters.

For engineers reviewing the MBRF860CT datasheet, MBRF860CT pinout, MBRF860CT application, or MBRF860CT equivalent, key selection factors include its 60 V V_RRM, dual-common-cathode configuration, 6 °C/W junction-to-case thermal resistance, AEC-Q101 qualification option (H-suffix), and ITO-220AB mechanical compatibility with heatsink mounting.

Technical Context

The MBRF860CT integrates two independent Schottky diodes in a single ITO-220AB thermally enhanced package with common cathode connection - enabling synchronous rectification or dual-output DC/DC topologies. Its guard ring structure provides overvoltage protection, and it sustains 10,000 V/µs critical rate of rise of off-state voltage (dv/dt).

Designed for high-frequency switching applications, it exhibits low reverse recovery charge and minimal junction capacitance, with reverse leakage limited to 10 µA at 25°C and 10 mA at 125°C under rated 60 V reverse bias - supporting stable operation in compact, thermally constrained power supplies.

Key Specifications

Pinout & Package

Package: ITO-220AB - Thermally optimized 3-terminal molded package with isolated metal tab (cathode-connected), matte tin-plated leads compliant with J-STD-002, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBRF860CT, VS-MBRB860CT offers marginally lower thermal resistance but lacks AEC-Q101 validation, while MBR860CT trades higher forward voltage for broader distributor availability - making MBRF860CT optimal for thermally demanding, automotive-qualified, or halogen-free-compliant designs.

Availability

MBRF860CT is available at Aetrix Electronics and suitable for switching mode power supplies, DC/DC converters, and industrial adapters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for MBRF860CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability rectifiers, TVS devices, and MOSFETs for industrial and automotive markets.

The MBRF8xxCT series was developed to deliver thermally robust, low-V_F Schottky rectification in standardized ITO-220AB packages for cost-sensitive yet performance-critical power conversion stages.

FAQ

What is the maximum junction temperature rating for the MBRF860CT?

The MBRF860CT has a maximum junction temperature (T_J) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This rating enables reliable operation in high-ambient environments such as enclosed industrial power supplies or telecom equipment. Derating curves confirm usable current capacity down to 4 A at 125°C case temperature. The MBRF860CT must be mounted with appropriate heatsinking to maintain T_J ≤ 150°C under full-load conditions.

Is the MBRF860CT pin-compatible with other parts in the MBRF8xxCT family?

Yes, all MBRF8xxCT variants - including MBRF835CT through MBRF8150CT - share identical ITO-220AB packaging, pinout (dual anode + common cathode), and mechanical dimensions. The MBRF860CT uses Pins 1 and 2 as independent anodes and Pin 3 as the common cathode, matching the layout of MBRF845CT, MBRF850CT, and others. Voltage rating differences do not affect physical or electrical interconnection.

Does the MBRF860CT have AEC-Q101 qualification?

The base MBRF860CT is not AEC-Q101 qualified; however, the AEC-Q101 variant is designated MBRF860CTH and carries the "H" suffix in the ordering code. This version undergoes additional stress testing per AEC-Q101 standards, including temperature cycling, high-temperature reverse bias, and ESD verification. For automotive applications, specify MBRF860CTH - the MBRF860CT itself is intended for industrial and commercial use.

What is the typical forward voltage drop of the MBRF860CT at rated current?

The MBRF860CT exhibits a maximum forward voltage (V_F) of 0.70 V per diode at 4 A and 25°C, per the Electrical Specifications table. At full-rated 8 A average current and elevated temperature (125°C), V_F rises to approximately 0.82 V. This low V_F directly reduces conduction losses - for example, 0.70 V × 4 A = 2.8 W dissipation per diode - making the MBRF860CT suitable for high-efficiency power conversion where thermal headroom is limited.

How does the MBRF860CT compare to standard PN-junction rectifiers in terms of switching performance?

The MBRF860CT uses Schottky barrier technology, resulting in near-zero reverse recovery time (t_rr) and negligible stored charge - unlike PN-junction rectifiers that exhibit microsecond-scale t_rr and significant reverse recovery current. This eliminates switching losses during turn-off, reduces EMI generation, and allows higher-frequency operation in SMPS designs. The MBRF860CT's 10,000 V/µs dv/dt rating further confirms its suitability for fast-switching topologies where conventional rectifiers would suffer from spurious conduction.