Taiwan Semiconductor Corporation MBRS16150H

Overview

MBRS16150H from Taiwan Semiconductor is a 16 A, 150 V Schottky barrier rectifier in TO-263AB (D2PAK) package, featuring 0.95 V forward voltage at 16 A and 25°C, 5 mA reverse leakage at 150 V and 125°C, and 150 A surge current capability - used as freewheeling diode in automotive DC/DC converters.

For engineers reviewing the MBRS16150H datasheet, MBRS16150H pinout, MBRS16150H application, or MBRS16150H equivalent, key selection criteria include peak repetitive reverse voltage (150 V), thermal resistance (1.5 °C/W), AEC-Q101 qualification, RoHS/halogen-free compliance, and TO-263AB mechanical compatibility with high-current PCB layouts.

Technical Context

This Schottky rectifier uses a single-die construction optimized for low forward voltage and fast switching in high-frequency power conversion. Its guard ring structure enhances overvoltage ruggedness, while the matte tin-plated leads ensure reliable solderability per J-STD-002.

Designed for operation up to 150°C junction temperature, it delivers stable performance under transient surge conditions (8.3 ms half-sine, 150 A) and maintains low reverse leakage (<100 µA at 25°C, <5 mA at 125°C) across its full 150 V rating.

Key Specifications

Pinout & Package

TO-263AB (D2PAK) surface-mount package with exposed cathode pad for thermal and electrical performance. Three terminals: Anode (lead 1), Cathode (tab + lead 2), and case-connected cathode (mechanical tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-MBR16150CT and MBR16150CT, MBRS16150H uniquely combines 150 V rating, AEC-Q101 qualification, surface-mount TO-263AB packaging, and single-diode configuration - enabling compact, automotive-grade, high-reliability freewheeling in space-constrained DC/DC designs.

Availability

MBRS16150H is available at Aetrix Electronics and suitable for automotive power conversion, reverse battery protection, LED headlamp drivers, and industrial 48 V power supplies requiring stable component supply and long-term lifecycle support.

Supply support for MBRS16150H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The MBRS16xxH series belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive under-hood and chassis-mounted electronics.

FAQ

What is the maximum junction temperature rating for MBRS16150H?

The MBRS16150H has a maximum junction temperature (T_J) of +150°C, verified per AEC-Q101 stress testing. This allows operation in under-hood automotive environments where case temperatures may reach 125°C, provided thermal design maintains junction temperature within limit. The device's R_θJC of 1.5 °C/W supports this with appropriate PCB copper area and airflow. MBRS16150H must be mounted with full-solder coverage on the cathode tab to achieve rated thermal performance.

Is MBRS16150H qualified for automotive applications?

Yes, MBRS16150H is AEC-Q101 qualified by Taiwan Semiconductor, covering HTOL, temperature cycling, HTRB, and other stress tests required for discrete semiconductors in automotive electronics. It is specified for use in engine control units, body electronics, and ADAS power supplies. MBRS16150H meets JESD22-A108 and JESD22-A104 standards, and its halogen-free, RoHS-compliant construction satisfies Tier 1 automotive supply chain requirements.

What is the forward voltage drop of MBRS16150H at rated current?

At 16 A and 25°C, the MBRS16150H exhibits a typical forward voltage (V_F) of 0.95 V, with a maximum of 0.98 V per datasheet limits. At elevated junction temperature (125°C), V_F drops to 0.92 V typical. This low V_F minimizes conduction losses in high-current paths - for example, reducing power dissipation by ~1.5 W compared to a 1.1 V diode at 16 A. MBRS16150H's V_F is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects.

Does MBRS16150H have a guard ring structure?

Yes, MBRS16150H incorporates a guard ring structure around the active die region to improve edge breakdown characteristics and enhance ruggedness against transient overvoltage events. This feature is explicitly listed in the "Features" section of the official Taiwan Semiconductor datasheet and contributes to its ability to sustain 150 V reverse bias under real-world automotive load-dump conditions. The guard ring helps prevent premature avalanche at junction periphery, increasing reliability in noisy electrical environments where MBRS16150H is deployed.

What is the moisture sensitivity level (MSL) of MBRS16150H?

MBRS16150H has a moisture sensitivity level (MSL) of Level 1 per J-STD-020, meaning it is not humidity-sensitive and requires no baking or dry-pack handling prior to surface-mount reflow. This simplifies manufacturing integration and eliminates floor-life tracking. The TO-263AB molding compound and matte tin plating contribute to this robustness. MBRS16150H can be stored indefinitely at ambient conditions and placed directly into standard reflow profiles without preconditioning - a key advantage for high-volume automotive electronics assembly.