Taiwan Semiconductor Corporation MBRS30H45CT

Overview

MBRS30H45CT from Taiwan Semiconductor is a 30A, 45V dual-die Schottky barrier rectifier in TO-263AB (D2PAK) package, optimized for high-efficiency DC/DC conversion with low forward voltage (0.70 V typ. at 15 A, 25°C) and high surge capability (220 A IFSM). It serves as the primary output rectifier in compact switching power supplies.

For engineers reviewing the MBRS30H45CT datasheet, MBRS30H45CT pinout, MBRS30H45CT application, or MBRS30H45CT equivalent, key selection criteria include thermal resistance (RθJC = 1.5°C/W), junction temperature range (–55°C to +175°C), moisture sensitivity level (J-STD-020 Level 1), and dual-die configuration enabling independent cathode routing.

Technical Context

The MBRS30H45CT integrates two identical Schottky die in a common-anode configuration within a single TO-263AB thermally enhanced surface-mount package. Its guard ring structure provides inherent overvoltage protection, while matte tin-plated leads ensure reliable solderability per J-STD-002.

Designed for high-frequency switching environments, it delivers low conduction loss (VF ≤ 0.90 V at 30 A, 25°C) and fast recovery (no reverse recovery charge), minimizing switching losses in SMPS operating up to several hundred kHz. The 10,000 V/µs dv/dt rating supports robust operation under rapid voltage transients.

Key Specifications

Pinout & Package

Package: TO-263AB (D2PAK), 3-terminal surface-mount package with exposed anode tab for thermal and electrical connection. Dimensions comply with JEDEC MO-211.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-30CPH045 and MBR30H45CT, the MBRS30H45CT offers the lowest VF at high temperature (0.75 V max @ 30 A, 125°C), giving it a 0.3–0.5% system efficiency advantage in thermally constrained 125°C junction environments.

Availability

MBRS30H45CT is available at Aetrix Electronics and suitable for switching mode power supplies, laptop adapters, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and J-STD-020 Level 1 assembly compatibility.

Supply support for MBRS30H45CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs.

The MBRS30H45CT belongs to TSC's high-current Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum junction temperature rating for the MBRS30H45CT?

The MBRS30H45CT has a maximum junction temperature (TJ MAX) of +175°C, allowing uninterrupted operation in high-ambient environments such as enclosed industrial power supplies or under-hood automotive ECUs. This rating is fully supported by its 1.5°C/W junction-to-case thermal resistance and TO-263AB package construction. Derating curves in the official datasheet confirm usable current capacity up to 125°C case temperature.

Does the MBRS30H45CT have a common-anode or common-cathode configuration?

The MBRS30H45CT uses a common-anode configuration: both Schottky dies share the center tab (Pin 2) as the anode, with independent cathodes on Pin 1 and Pin 3. This is confirmed by the device marking diagram, absolute maximum ratings table, and internal schematic in the Taiwan Semiconductor datasheet. It enables flexible topologies including dual-output rectification and interleaved phases.

Is the MBRS30H45CT suitable for lead-free reflow soldering?

Yes, the MBRS30H45CT is qualified for lead-free reflow soldering per J-STD-020 Level 1, with a peak reflow temperature tolerance of 260°C. Its matte tin-plated terminals meet J-STD-002 solderability requirements, and the molding compound is UL 94V-0 rated. No pre-bake is required due to its Level 1 moisture sensitivity classification.

What is the typical forward voltage drop of the MBRS30H45CT at full rated current?

At 30 A and 25°C, the MBRS30H45CT exhibits a typical forward voltage drop of 0.80 V and a maximum of 0.90 V. At elevated temperature (125°C), the typical VF drops to 0.65 V with a maximum of 0.75 V - a characteristic benefit of Schottky diodes that improves efficiency under thermal stress. These values are measured per datasheet conditions (pulse width = 0.3 ms).

How does the guard ring feature improve reliability in the MBRS30H45CT?

The guard ring in the MBRS30H45CT mitigates edge breakdown under high dv/dt or transient overvoltage conditions by distributing electric field stress away from the active junction periphery. With a rated critical dv/dt of 10,000 V/µs, this structure enhances ruggedness in fast-switching SMPS and prevents premature failure during line surges or inductive kickback - a key differentiator versus non-guarded Schottky rectifiers.