Diodes Incorporated MMBD4448H-7-F

Overview

MMBD4448H-7-F from Diodes Incorporated is a surface-mount fast-switching silicon switching diode in SOT23 package, rated for 100 V non-repetitive peak reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time; used in high-speed signal routing, clamp protection, and sample-and-hold circuits in telecom interface modules.

For engineers reviewing the MMBD4448H-7-F datasheet, MMBD4448H-7-F pinout, MMBD4448H-7-F application, or MMBD4448H-7-F equivalent, key selection criteria include reverse recovery time, forward voltage at 10 mA, junction-to-ambient thermal resistance, and SOT23 terminal configuration for automated PCB assembly.

Technical Context

This diode employs a planar epitaxial construction optimized for low charge storage and rapid carrier recombination, enabling sub-5 ns trr performance under 5 mA forward/6 V reverse bias conditions. Its 3.5 pF capacitance at 6 V reverse bias supports RF signal path switching up to ~100 MHz.

The device operates across –65 °C to +150 °C with 357 °C/W RθJA on FR-4 board using recommended pad layout, and maintains <100 nA IR at 70 V VR and 25 °C - critical for precision analog front-end clamping.

Key Specifications

Pinout & Package

Package: SOT23 - three-terminal surface-mount plastic case (UL 94V-0), 2.9 mm × 1.3 mm footprint, 1.1 mm height, matte tin-plated Alloy 42 leads, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching diode applications.

Compared with BAT54C-7-F and 1N4148W-7-F, MMBD4448H-7-F delivers guaranteed 4.0 ns trr and 100 V VRM in identical SOT23 form factor - making it preferred for mixed-signal systems requiring both high-speed switching and robust overvoltage tolerance.

Availability

MMBD4448H-7-F is available at Aetrix Electronics and suitable for digital I/O protection, RF signal switching, sample-and-hold circuits requiring stable component supply and consistent parametric performance across production lots.

Supply support for MMBD4448H-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The MMBD4448H belongs to Diodes' general-purpose switching diode product line, engineered for high-volume automated assembly in consumer, computing, and industrial control applications demanding reliability and parametric consistency.

FAQ

What is the maximum junction temperature for continuous operation?

The MMBD4448H-7-F has an operating junction temperature range of –65 °C to +150 °C. Continuous operation at 150 °C requires derating power dissipation per the published curve: at 125 °C ambient, max PD drops to ~200 mW on FR-4 with recommended pads.

Is this diode suitable for bidirectional ESD protection?

No - the MMBD4448H-7-F is a unidirectional silicon switching diode. For bidirectional ESD protection, TVS diodes such as the D3V3M1U2LP-7 or PUSB3FR4 are required; this part functions only as anode-to-cathode clamp.

Does the "-7-F" suffix indicate tape-and-reel packaging?

Yes - the "-7-F" suffix denotes 3000-unit tape-and-reel packaging in SOT23 format, compliant with EIA-481 standards and compatible with standard SMT pick-and-place feeders.

How does its reverse recovery time compare to Schottky alternatives?

At 4.0 ns, MMBD4448H-7-F is faster than most general-purpose PN diodes but slower than Schottky diodes like the BAT54 (typ. 1 ns). However, Schottkys lack 100 V VRM - making this part the optimal trade-off for >50 V systems needing sub-5 ns switching.