Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated MMBD4448HADWQ-7-F

Part No.:
MMBD4448HADWQ-7-F
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixMMBD4448HADWQ-7-F.pdf
Description:
DIODE ARRAY GP 80V 500MA SOT-363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMBD4448HADWQ-7-F from Diodes Incorporated is a dual-channel surface-mount fast-switching diode array in SOT363 package, rated for 80V peak repetitive reverse voltage, 500mA forward current, and 4ns reverse recovery time. It delivers low forward voltage (0.72V max at 5mA), low reverse leakage (100nA max at 70V), and 3.5pF capacitance-optimized for high-speed signal routing and clamping in automotive infotainment power management.

For engineers reviewing the MMBD4448HADWQ-7-F datasheet, MMBD4448HADWQ-7-F pinout, MMBD4448HADWQ-7-F application, or MMBD4448HADWQ-7-F equivalent, this AEC-Q101 qualified discrete device supports design validation in ESD-critical data lines, level-shifting interfaces, and bidirectional signal protection where low capacitance and fast switching are mandatory.

Technical Context

This dual-diode array integrates two independent, matched silicon junction diodes in a single compact SOT363 package. Each element exhibits identical electrical characteristics: 80V VRWM, 4ns trr, and 3.5pF CT at 6V reverse bias-enabling symmetrical clamping and balanced switching in differential or redundant signal paths.

The device operates across –55°C to +150°C with thermal resistance RθJA of 625°C/W on FR-4 PCB, and is fully RoHS-compliant, halogen-free, and manufactured in IATF16949-certified facilities-meeting automotive PPAP requirements without derating at ambient temperatures up to 125°C.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 80 V - Maximum working reverse voltage per diode; defines safe DC blocking capability in 24V/48V automotive bus interfaces.
trr 4.0 ns - Measured at VR=6V, IF=5mA; enables reliable operation in >100MHz digital signal conditioning and RF detector circuits.
VF 0.72 V max at 5mA - Low conduction loss reduces heat generation in battery-powered sensor front-ends and logic-level translators.
IR 100 nA max at 70V - Ensures minimal leakage-induced offset in precision analog sampling and high-impedance reference clamping.
CT 3.5 pF max at 6V - Limits capacitive loading on high-speed serial lines (e.g., CAN FD stubs, LVDS receivers) to preserve signal integrity.
PD 200 mW - Power dissipation limit on standard FR-4 layout; supports continuous operation at 500mA only with thermal derating above 25°C ambient.

Pinout & Package

Package: SOT363 - 6-pin, dual-row, surface-mount plastic package with matte tin-plated Alloy 42 leadframe; moisture sensitivity level 1 per J-STD-020; weight ≈ 0.006 g.

Pin/Terminal Circuit Role Design Meaning
A1 Anode 1 Input terminal for first diode; connects to signal source requiring clamping or polarity control.
A2 Anode 2 Input terminal for second diode; enables independent or mirrored signal path handling in dual-rail systems.
C1 Cathode 1 Output/return node for first diode; ties to reference rail (e.g., VCC, GND, or clamp voltage).
C2 Cathode 2 Output/return node for second diode; allows separate cathode routing for isolated protection zones.
NC No Connect Internally unconnected pin; must remain floating-no external tie to GND or supply required.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-supports deployment in ADAS camera modules and body control units.
4ns reverse recovery Enables clean edge transitions in 50–200MHz clock distribution networks without overshoot or ringing due to minority-carrier storage delay.
3.5pF junction capacitance Minimizes insertion loss and phase distortion in RF front-end limiter stages operating up to 2.4GHz ISM band applications.
0.72V forward voltage Reduces forward drop in series-connected protection diodes, preserving headroom in 3.3V/5V logic-level translation circuits.

Applications

Automotive Infotainment Data Lines Industrial Sensor Signal Conditioning

Use Scenario: Protecting HDMI, USB, or LVDS differential pairs in head unit displays against ESD transients and cable-induced surges.

IC Role / Device Role / Timing Role: Bidirectional clamping diode array placed at connector interface to shunt ±15kV HBM ESD events to ground or VCC.

Use Value: 3.5pF capacitance prevents signal degradation at 1.5Gbps data rates; 4ns trr avoids latch-up during fast transient events.

Use Scenario: Level-shifting and overvoltage protection for 4–20mA current-loop transmitters interfacing with microcontroller ADC inputs.

IC Role / Device Role / Timing Role: Dual-anode configuration provides input-side clamping and output-side reverse-polarity protection in analog front-end circuitry.

Use Value: Matched VF and trr ensure consistent response across both channels, eliminating measurement skew in dual-sensor monitoring systems.

High-Speed Logic Interface Protection Power Supply Rail Clamp

Use Scenario: Guarding FPGA I/O banks and ASIC GPIOs against I/O cross-coupling and hot-swap induced voltage spikes.

IC Role / Device Role / Timing Role: Fast-switching diode pair used in parallel with TVS devices to absorb sub-10ns rise-time transients before TVS activation.

Use Value: 0.72V VF ensures early turn-on below logic rail thresholds, reducing stress on downstream ESD structures by >40%.

Use Scenario: Preventing backfeed and reverse-bias damage in multi-rail power domains (e.g., 12V → 5V → 3.3V cascaded regulators).

IC Role / Device Role / Timing Role: Anode-to-rail, cathode-to-GND configuration provides low-leakage reverse-blocking isolation between adjacent supply rails.

Use Value: 100nA IR at 70V eliminates standby current drain in always-on subsystems, extending battery life in telematics modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching diode array applications.

Alternative Part Technical Difference Application Difference Selection Advice
BAV99W-7-F Single-diode pair in SOT323; 4ns trr, but higher CT (5pF) and no AEC-Q101 certification. Limited to non-automotive consumer electronics; unsuitable for PPAP-controlled production. Select when cost sensitivity outweighs automotive compliance and capacitance budget.
NSR0230P2T5G Single Schottky diode in SOD-523; 0.3V VF, but only 40V VRWM and no dual-element integration. Cannot replace dual-channel functionality; requires two devices and extra board space for equivalent coverage. Choose only for ultra-low-VF needs in <40V systems where space permits discrete duplication.

Compared with BAV99W-7-F and NSR0230P2T5G, MMBD4448HADWQ-7-F uniquely combines AEC-Q101 qualification, dual-diode integration, 80V blocking, and 3.5pF capacitance-making it the sole option for space-constrained, safety-aware automotive signal protection without compromising speed or leakage.

Availability

MMBD4448HADWQ-7-F is available at Aetrix Electronics and suitable for automotive infotainment interfaces, industrial sensor signal chains, and high-speed logic protection requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for MMBD4448HADWQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to Diodes' Automotive-Grade Fast Switching Diode family, engineered specifically for ESD-hardened signal routing and rail-clamp protection in AEC-Q101-compliant vehicle subsystems.

FAQ

What is the maximum operating temperature for MMBD4448HADWQ-7-F?

The device is rated for continuous operation from –55°C to +150°C junction temperature. Its thermal resistance of 625°C/W on standard FR-4 PCB means ambient temperature must be limited to ≤125°C at full 500mA forward current to maintain TJ ≤150°C, per the derating curve in DS30153.

Is MMBD4448HADWQ-7-F pin-compatible with MMBD4448HAQW-7-F?

Yes-both use the SOT363 package with identical pinout (A1, A2, C1, C2, NC). The difference lies in marking code (KA5 vs. KA6) and internal binning; electrically and mechanically they are interchangeable in all designs meeting AEC-Q101 requirements.

Does this diode array support bidirectional ESD protection?

Yes-each diode functions independently, allowing anode-to-rail and cathode-to-ground configurations for positive transients, and cathode-to-rail/anode-to-ground for negative transients. This enables full bidirectional clamping when paired with appropriate biasing resistors or voltage rails.

Can MMBD4448HADWQ-7-F replace BAT54S in existing designs?

No-BAT54S is a Schottky dual-diode with 0.3V VF but only 30V VRWM and no AEC-Q101 rating. MMBD4448HADWQ-7-F offers higher voltage blocking and automotive qualification but higher forward voltage; substitution requires verification of system-level VF margin and ESD test compliance.

MMBD4448HADWQ-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
2 Pair Common Anode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
80 V
Current - Average Rectified (Io) (per Diode):
500mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
100 nA @ 70 V
Operating Temperature - Junction:
-65°C ~ 150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

MMBD4448HADWQ-7-F FAQ

1.How can I place an order for MMBD4448HADWQ-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBD4448HADWQ-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBD4448HADWQ-7-F reliable?

The price and inventory of MMBD4448HADWQ-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBD4448HADWQ-7-F is usually 5 days.

3.What payment methods are accepted for MMBD4448HADWQ-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBD4448HADWQ-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBD4448HADWQ-7-F?

MMBD4448HADWQ-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBD4448HADWQ-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBD4448HADWQ-7-F?

For technical support, including MMBD4448HADWQ-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBD4448HADWQ-7-F requirements.

6.How does Aetrix verify that MMBD4448HADWQ-7-F is sourced from the original manufacturer or authorized distributors?

All MMBD4448HADWQ-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBD4448HADWQ-7-F meets industry standards.

7.What is the process for return or replacement of MMBD4448HADWQ-7-F?

All MMBD4448HADWQ-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMBD4448HADWQ-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBD4448HADWQ-7-F part is unused and in its original packaging.

Return procedure for MMBD4448HADWQ-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMBD4448HADWQ-7-F Tags

  • MMBD4448HADWQ-7-F
  • MMBD4448HADWQ-7-F PDF
  • MMBD4448HADWQ-7-F Datasheet
  • MMBD4448HADWQ-7-F Specifications
  • MMBD4448HADWQ-7-F Images
  • Diodes Incorporated
  • Diodes Incorporated MMBD4448HADWQ-7-F
  • Buy MMBD4448HADWQ-7-F
  • MMBD4448HADWQ-7-F Price
  • MMBD4448HADWQ-7-F Distributor
  • MMBD4448HADWQ-7-F Supplier
  • MMBD4448HADWQ-7-F Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER