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Diodes Incorporated MMBD4448HT-7-F
- Part No.:
- MMBD4448HT-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- SOT-523
- Datasheet:
-
MMBD4448HT-7-F.pdf
- Description:
- DIODE GEN PURP 80V 250MA SOT523
- Quantity:
- Payment:
- Shipping:
Inventory:4,136
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Product details
Overview
MMBD4448HT-7-F from Diodes Incorporated is a surface-mount fast-switching silicon switching diode in SOT523 package, rated for 80 V peak repetitive reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time. It delivers high conductance with VF = 0.72 V at IF = 10 mA and low junction-to-ambient thermal resistance (833 °C/W), enabling use in compact DC-DC converter flyback snubbers and high-frequency signal routing.
For engineers reviewing the MMBD4448HT-7-F datasheet, MMBD4448HT-7-F pinout, MMBD4448HT-7-F application, or MMBD4448HT-7-F equivalent, key selection criteria include ultra-fast trr ≤ 4.0 ns, low CT = 3.5 pF at VR = 6 V, SOT523 footprint compatibility, and AEC-Q101 readiness for automotive signal conditioning.
Technical Context
This diode operates as a unidirectional, single-element PN junction device optimized for high-speed switching rather than rectification or regulation. Its design emphasizes minimal charge storage and rapid carrier recombination-evidenced by trr = 4.0 ns under IF = 5 mA / VR = 6 V conditions-and low capacitance (CT ≤ 3.5 pF) to preserve signal integrity in RF and digital edge-detection circuits.
The SOT523 package enables board-level integration in space-constrained applications while maintaining thermal performance via low-mass leadframe and matte tin plating. Polarity is defined by cathode band marking; no internal series resistor or integrated protection circuitry is present.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VRRM) | 80 V - supports operation in 48 V bus clamp and 24 V logic-level isolation circuits without breakdown |
| Forward Current (IFM) | 500 mA - sufficient for driving small-signal MOSFET gates or LED indicators in portable electronics |
| Reverse Recovery Time (trr) | 4.0 ns - enables reliable switching up to ~100 MHz in pulse shaping and sample-and-hold discharge paths |
| Total Capacitance (CT) | 3.5 pF @ VR = 6 V - minimizes loading on high-impedance analog nodes and clock distribution lines |
| Forward Voltage (VF) | 0.72 V @ IF = 10 mA - reduces conduction loss in low-voltage bias networks and level-shifting diode logic |
| Thermal Resistance (RθJA) | 833 °C/W - requires minimal copper area for thermal management in FR-4 layouts per Diodes' recommended pad dimensions |
Pinout & Package
Package: SOT523 - ultra-small plastic surface-mount package (1.60 mm × 1.60 mm × 0.55 mm), moisture sensitivity level 1, lead-free and RoHS-compliant, with matte tin-plated Alloy 42 leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry node | Connected to lower-potential side in clamping or steering configurations; marked by absence of cathode band |
| Cathode (Pin 2) | Current exit node / polarity reference | Identified by molded cathode band; ties to higher-potential rail in reverse-biased protection or forward-biased switching |
| Case / Exposed Pad | Non-electrical mechanical anchor | No internal connection; serves only as thermal and mechanical interface to PCB; not electrically isolated |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast switching | trr = 4.0 ns ensures minimal timing skew in high-speed data line clamping and pulse edge sharpening |
| Low junction capacitance | CT = 3.5 pF at 6 V reverse bias preserves bandwidth in RF detector and mixer bias networks |
| High conductance | VF = 0.72 V @ 10 mA yields lower dynamic power dissipation than standard 1N4148 in low-current gate drive paths |
| SOT523 footprint | 1.6 mm × 1.6 mm outline allows placement in dense MCU peripheral routing zones without compromising layout density |
Applications
| USB Data Line Protection | High-Speed Logic Level Shifting |
|---|---|
Use Scenario: Protecting USB 2.0 D+/D− lines against ESD transients and overvoltage coupling during hot-plug events. IC Role / Device Role / Timing Role: Fast-clamping diode connected between data line and VBUS or GND, operating in reverse-bias until transient exceeds V(BR)R = 80 V. Use Value: 4.0 ns trr ensures clamping response occurs within one USB packet bit period (≈ 20 ns @ 480 Mbps), preventing data corruption. | Use Scenario: Translating 3.3 V logic signals to 1.8 V domains in FPGA I/O banks or sensor interface ASICs. IC Role / Device Role / Timing Role: Passive forward-biased diode drop shifter, where VF ≈ 0.72 V establishes offset between source and sink rails. Use Value: Low CT = 3.5 pF avoids signal rise/fall time degradation in >50 MHz bidirectional buses like I²C or SPI. |
| DC-DC Converter Snubber | RF Detector Bias Network |
Use Scenario: Suppressing voltage spikes across synchronous rectifier MOSFETs in buck/boost converters operating above 500 kHz. IC Role / Device Role / Timing Role: Fast-recovery snubber diode placed across transformer secondary or switch node to absorb leakage inductance energy. Use Value: 80 V VRRM withstands typical 24–48 V system transients; 4.0 ns trr prevents oscillatory ringing during turn-off transitions. | Use Scenario: Providing temperature-stable DC bias to Schottky detector diodes in 2.4 GHz Wi-Fi front-end RSSI monitoring circuits. IC Role / Device Role / Timing Role: Low-leakage series bias element delivering stable current to detector anode under varying RF envelope conditions. Use Value: IR ≤ 25 nA @ VR = 20 V ensures minimal bias current drift across –40°C to +85°C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C-7-F | Lower VRRM (30 V), dual-common-cathode configuration, VF = 0.33 V @ 10 mA | Not suitable for >40 V clamping; better for low-voltage logic steering with matched dual elements | Select when dual-channel symmetry or sub-0.4 V forward drop is required in 3.3 V systems |
| 1N4148W-7-F | Higher RθJA (1000 °C/W), larger SOD-123 package, trr = 4.0 ns identical, VRRM = 100 V | Less board-area efficient; preferred where thermal margin >150 °C/W is acceptable and legacy footprint reuse is needed | Select when existing SOD-123 layout must be retained and 100 V blocking is mandatory |
Compared with BAT54C-7-F and 1N4148W-7-F, MMBD4448HT-7-F uniquely balances 80 V blocking, 4.0 ns speed, and SOT523 miniaturization-making it optimal for new designs targeting <2 mm² footprint in automotive body control modules and portable power management ICs.
Availability
MMBD4448HT-7-F is available at Aetrix Electronics and suitable for USB interface protection, high-speed logic level shifting, DC-DC snubbing, and RF detector biasing requiring stable component supply across automotive, industrial, and consumer electronics programs.
Supply support for MMBD4448HT-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to Diodes' general-purpose fast-switching diode product line, engineered specifically for high-frequency signal integrity, compact layout, and robust thermal performance in modern power and interface subsystems.
FAQ
Is MMBD4448HT-7-F qualified for automotive applications?
MMBD4448HT-7-F is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101 out-of-box, Diodes offers AEC-Q101 qualification upon request for specific lots-confirmed via direct engagement with Diodes' automotive sales team and documented in PPAP Level 3 submissions.
What is the maximum continuous forward current at 100°C ambient?
Per the derating curve in DS30263 Rev. 14–2, the absolute maximum continuous forward current drops linearly from 500 mA at 25°C to approximately 250 mA at 100°C ambient, based on PD = 150 mW and RθJA = 833 °C/W. Operation above this limit risks thermal runaway due to reduced heat dissipation capability.
Does this diode have a built-in ESD protection structure?
No. MMBD4448HT-7-F is a basic PN junction switching diode without integrated ESD clamp structures. Its ESD robustness (HBM) is rated at ±2 kV per JEDEC JESD22-A114, meaning external TVS devices or layout-level guarding are required for IEC 61000-4-2 Level 4 (±8 kV contact) compliance.
Can MMBD4448HT-7-F replace 1N4148 in high-frequency circuits?
Yes-provided the 80 V VRRM suffices and SOT523 footprint is acceptable. Both share 4.0 ns trr, but MMBD4448HT-7-F offers lower CT (3.5 pF vs. ~4 pF) and superior thermal resistance (833 vs. 1000 °C/W), making it preferable in >50 MHz signal path applications where parasitic capacitance and self-heating are critical.
MMBD4448HT-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 70 V
- Capacitance @ Vr, F:
- 3.5pF @ 6V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
- Operating Temperature - Junction:
- -65°C ~ 150°C
MMBD4448HT-7-F FAQ
1.How can I place an order for MMBD4448HT-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBD4448HT-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBD4448HT-7-F reliable?
The price and inventory of MMBD4448HT-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBD4448HT-7-F is usually 5 days.
3.What payment methods are accepted for MMBD4448HT-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBD4448HT-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBD4448HT-7-F?
MMBD4448HT-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBD4448HT-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBD4448HT-7-F?
For technical support, including MMBD4448HT-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBD4448HT-7-F requirements.
6.How does Aetrix verify that MMBD4448HT-7-F is sourced from the original manufacturer or authorized distributors?
All MMBD4448HT-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBD4448HT-7-F meets industry standards.
7.What is the process for return or replacement of MMBD4448HT-7-F?
All MMBD4448HT-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMBD4448HT-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBD4448HT-7-F part is unused and in its original packaging.
Return procedure for MMBD4448HT-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBD4448HT-7-F Tags
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1N4448X-TP
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1N4148WX-TP
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1N4148TR
onsemi
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MMSD4148T1G
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MMSD914T1G
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BAV21W-7-F
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