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Diodes Incorporated MMBD4448HTC-7-F
- Part No.:
- MMBD4448HTC-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SOT-523
- Datasheet:
-
MMBD4448HTC-7-F.pdf
- Description:
- DIODE ARRAY GP 80V 250MA SOT-523
- Quantity:
- Payment:
- Shipping:
Inventory:4,420
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Product details
Overview
MMBD4448HTC-7-F from Diodes Incorporated is a surface-mount fast-switching silicon switching diode in SOT523 package, rated for 80 V peak repetitive reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time. It delivers high conductance with low forward voltage (0.62 V @ 5 mA) and ultra-low leakage (<25 nA @ 20 V), suited for high-speed signal routing in compact consumer and industrial power management circuits.
For engineers reviewing the MMBD4448HTC-7-F datasheet, MMBD4448HTC-7-F pinout, MMBD4448HTC-7-F application, or MMBD4448HTC-7-F equivalent, key selection criteria include reverse recovery speed, thermal resistance (833 °C/W), junction temperature range (–55 to +150 °C), and RoHS-compliant green packaging for space-constrained PCB layouts.
Technical Context
This diode operates as a unidirectional, single-element PN-junction switch optimized for high-frequency on/off control. Its 4.0 ns trr and 3.5 pF capacitance at 6 V enable clean edge transitions in digital logic interfaces and sample-and-hold circuits.
Designed for low-power signal-level switching, it maintains stable VF across 5–150 mA (0.62–1.25 V) and exhibits <30 nA leakage at 25 V and 150 °C - critical for battery-backed sensing nodes and precision analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time | 4.0 ns - enables reliable operation up to ~80 MHz switching in clamping and waveform shaping |
| Peak Repetitive Reverse Voltage | 80 V - supports use in 48 V system rails and transient-suppressed I/O protection |
| Forward Current (Continuous) | 500 mA - sufficient for driving small-signal MOSFET gates or LED indicators |
| Thermal Resistance (Junction-to-Ambient) | 833 °C/W - requires minimal copper area for thermal relief in FR-4 layouts |
| Total Capacitance | 3.5 pF @ 6 V - minimizes signal distortion in RF detector and mixer bias networks |
| Leakage Current | <25 nA @ 20 V - preserves accuracy in high-impedance sensor conditioning paths |
| Forward Voltage | 0.62 V @ 5 mA - reduces conduction loss in low-voltage logic-level translation |
Pinout & Package
Package: SOT523 - ultra-small plastic surface-mount outline (1.60 × 1.60 × 0.75 mm), lead-free matte tin-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry node under forward bias | Connected to higher-potential side of switched path; polarity marked by cathode band on package top view |
| Cathode (Pin 2) | Current exit node under forward bias | Connected to lower-potential reference (e.g., ground or return rail); identifies device orientation during automated placement |
| Case / Exposed Pad | Non-electrical mechanical termination | No internal connection; serves only as thermal and mechanical anchor - not to be used as heatsink or ground path |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast switching | 4.0 ns trr ensures minimal timing skew in clock distribution and pulse generation |
| High conductance | Low VF (0.62 V @ 5 mA) reduces voltage drop in series-switched signal paths |
| Green compound packaging | Halogen- and antimony-free molding compound meets automotive "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb) |
| SOT523 footprint | 1.6 mm × 1.6 mm body enables dense layout in wearables and IoT sensor modules |
| Lead-free & RoHS 3 compliant | Fully compliant with EU Directive 2015/863/EU; no purposely added lead or restricted substances |
Applications
| High-Speed Logic Clamping | Low-Power Signal Routing |
|---|---|
Use Scenario: Protecting CMOS input pins from overshoot/undershoot in 3.3 V microcontroller GPIOs. IC Role / Device Role / Timing Role: Fast-clamp diode shunting transients to VCC or GND before logic threshold violation. Use Value: 4.0 ns trr prevents latch-up during nanosecond-scale ESD events; 3.5 pF capacitance avoids signal integrity degradation. | Use Scenario: Isolating multiple sensor outputs sharing a common ADC input channel. IC Role / Device Role / Timing Role: Passive OR-ing diode enabling multiplexed analog signal selection without active switching. Use Value: 0.62 V VF minimizes offset error; <25 nA IR preserves DC accuracy over temperature in battery-powered systems. |
| RF Detector Biasing | Gate Drive Protection |
Use Scenario: Providing DC bias to Schottky diode detectors in sub-GHz wireless receivers. IC Role / Device Role / Timing Role: Low-capacitance blocking diode isolating RF path from DC supply while passing bias current. Use Value: 3.5 pF CT prevents RF leakage into bias rail; 80 V VRRM accommodates envelope detection peaks. | Use Scenario: Clamping Miller-induced voltage spikes during MOSFET turn-off in DC-DC converters. IC Role / Device Role / Timing Role: Snubber diode diverting gate-source transient energy away from driver IC output stage. Use Value: 500 mA IF rating handles brief surge currents; –55 to +150 °C TJ range supports under-hood automotive environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C-7-F | Lower VRRM (30 V), higher CT (10 pF), same SOT523 package | Not suitable for >30 V rail clamping; higher capacitance limits RF use | Select when cost-sensitive and operating below 24 V with relaxed speed requirements |
| 1N4148W-7-F | Higher trr (4 ns typical but 8 ns max), larger SOD-123 package (2.7 × 1.6 mm) | Less suitable for ultra-dense layouts; wider trr variation affects timing-critical designs | Select when legacy footprint compatibility or higher surge rating (2 A IFSM) is prioritized over size |
Compared with BAT54C-7-F and 1N4148W-7-F, MMBD4448HTC-7-F uniquely balances 80 V rating, 4.0 ns trr, and SOT523 size - making it optimal for next-gen space-constrained, high-speed digital and mixed-signal systems where voltage headroom and timing fidelity are jointly critical.
Availability
MMBD4448HTC-7-F is available at Aetrix Electronics and suitable for high-speed logic clamping, low-power signal routing, and RF detector biasing requiring stable component supply across production volumes.
Supply support for MMBD4448HTC-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' general-purpose fast-switching diode product line, engineered specifically for high-frequency signal integrity and compact board space utilization in consumer, industrial, and automotive electronics.
FAQ
What is the maximum junction temperature for continuous operation?
The MMBD4448HTC-7-F has an operating junction temperature range of –55 °C to +150 °C. Continuous operation at +150 °C is permitted provided power dissipation remains within derated limits - e.g., ≤18 mW at +150 °C per the Fig. 1 derating curve, assuming standard FR-4 mounting.
Is this diode suitable for automotive applications?
The MMBD4448HTC-7-F is not AEC-Q101 qualified. While it shares the same SOT523 package and process as automotive-grade variants (e.g., MMBD4448HTA-7-F), only HTA/HTS suffixes are PPAP-capable and manufactured in IATF 16949-certified facilities per Diodes' product definitions.
How does its reverse recovery time compare to the 1N4148?
MMBD4448HTC-7-F specifies 4.0 ns typical trr under 5 mA IF and 6 V VR conditions, whereas the 1N4148W-7-F specifies 4 ns typical but up to 8 ns maximum. The tighter trr distribution and lower capacitance (3.5 pF vs. ~4 pF) make MMBD4448HTC-7-F more consistent in high-speed timing-critical roles.
Can it replace a BAT54 series Schottky diode?
No - the MMBD4448HTC-7-F is a silicon PN diode, not a Schottky. It has higher VF (0.62 V min vs. BAT54C's 0.25 V) and slower recovery than Schottky types, but offers superior reverse leakage control at high temperature and higher VRRM (80 V vs. 30 V), making it unsuitable as a direct Schottky substitute in low-VF or RF-mixing roles.
MMBD4448HTC-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 70 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
MMBD4448HTC-7-F FAQ
1.How can I place an order for MMBD4448HTC-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBD4448HTC-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBD4448HTC-7-F reliable?
The price and inventory of MMBD4448HTC-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBD4448HTC-7-F is usually 5 days.
3.What payment methods are accepted for MMBD4448HTC-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBD4448HTC-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBD4448HTC-7-F?
MMBD4448HTC-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBD4448HTC-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBD4448HTC-7-F?
For technical support, including MMBD4448HTC-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBD4448HTC-7-F requirements.
6.How does Aetrix verify that MMBD4448HTC-7-F is sourced from the original manufacturer or authorized distributors?
All MMBD4448HTC-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBD4448HTC-7-F meets industry standards.
7.What is the process for return or replacement of MMBD4448HTC-7-F?
All MMBD4448HTC-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMBD4448HTC-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBD4448HTC-7-F part is unused and in its original packaging.
Return procedure for MMBD4448HTC-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBD4448HTC-7-F Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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