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Nexperia USA Inc. MMBZ12VAL-QR
- Part No.:
- MMBZ12VAL-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ12VAL-QR.pdf
- Description:
- MMBZ12VAL-Q/SOT23/TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,967
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Product details
Overview
MMBZ12VAL-Q from Nexperia is a unidirectional double ESD protection diode in common-anode SOT23 configuration, designed for transient overvoltage protection of two signal lines. It delivers 30 kV contact ESD immunity (IEC 61000-4-2 Level 4), 140 pF max capacitance, 8.5 V reverse standoff voltage, and 40 W peak pulse power - enabling high-fidelity signal line protection in automotive ECUs and portable electronics.
For engineers reviewing the MMBZ12VAL-Q datasheet, MMBZ12VAL-Q pinout, MMBZ12VAL-Q application, or MMBZ12VAL-Q equivalent, key selection criteria include its dual-line unidirectional clamping topology, low leakage (5 nA), AEC-Q101 qualification, and SOT23 footprint compatibility with space-constrained PCB layouts.
Technical Context
This device implements a common-anode dual-cathode TVS structure, allowing independent unidirectional protection of two signal paths to ground while supporting bidirectional protection of a single line via differential clamping between cathodes. Its junction design targets fast response (<1 ns rise time) to ESD transients per IEC 61000-4-2.
Thermal resistance from junction to solder point is 340 K/W, and clamping occurs at ≤17 V under 2.35 A 10/1000 µs pulses. The 110–140 pF capacitance range ensures minimal signal integrity impact on USB 2.0, I²C, and CAN FD data lines up to 100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 8.5 V - Maximum continuous operating voltage before conduction begins; sets upper limit for protected signal swing. |
| Clamping Voltage | ≤17 V at 2.35 A - Peak voltage seen by protected circuit during worst-case surge; defines safe margin for downstream ICs. |
| Diode Capacitance | 110–140 pF at 1 MHz - Low enough to avoid signal distortion on high-speed interfaces like HDMI DDC or audio I²S. |
| ESD Rating | 30 kV contact discharge - Meets IEC 61000-4-2 Level 4; qualifies for direct connector-side placement in automotive infotainment ports. |
| Peak Pulse Power | 40 W (10/1000 µs) - Sustains energy from lightning-induced surges or cable discharge events without degradation. |
| Leakage Current | 0.1–5 nA at 8.5 V - Enables use on battery-backed real-time clock lines and sensor bias rails without measurable drain. |
| Breakdown Voltage | 11.4–12.6 V at 1 mA - Tight 10% tolerance ensures consistent turn-on behavior across production lots. |
Pinout & Package
Encapsulated in a standard SOT23 (TO-236AB) plastic surface-mount package measuring 2.9 mm × 1.3 mm × 1.0 mm with 1.9 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Connects to first protected signal line; conducts transient current to common anode (pin 3) during positive overvoltage events. |
| 2 (K2) | Cathode of Diode 2 | Connects to second protected signal line; enables independent clamping path for parallel data or control lines. |
| 3 (A) | Common Anode | Connected to system ground; serves as shared return path for both diodes' surge current during unidirectional operation. |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Enables compact dual-line protection in one SOT23 footprint - eliminates need for two discrete devices and reduces PCB area by >40%. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress - supports deployment in engine control modules and ADAS sensors. |
| Ultra-low leakage (5 nA max) | Prevents signal rail loading on high-impedance analog inputs such as microphone bias or thermistor dividers without calibration drift. |
| 140 pF max capacitance | Maintains signal integrity on 48 MHz USB 2.0 D+ and D− lines with <0.5% rise-time degradation at full data rate. |
| 30 kV contact ESD rating | Exceeds IEC 61000-4-2 Level 4 requirement - allows direct integration at USB-C, HDMI, or SD card connectors without external shielding. |
Applications
| Automotive ECU Protection | USB 2.0 Interface Protection |
|---|---|
|
Use Scenario: Protecting LIN bus and sensor input lines in body control modules exposed to ISO 7637-2 pulses and human-hand ESD. IC Role / Device Role: Unidirectional clamping diode array placed within 3 mm of connector entry point to shunt transients to chassis ground. Use Value: Prevents latch-up in MC9S12XDP512 microcontrollers by limiting induced voltage to ≤17 V during 30 kV contact discharge events. |
Use Scenario: Safeguarding D+ and D− lines of embedded USB host controllers in industrial HMIs against hot-plug ESD. IC Role / Device Role: Dual-cathode TVS providing independent clamping for each data line referenced to common ground plane. Use Value: Maintains eye diagram compliance at 480 Mbps with <1% jitter increase due to 110 pF typical capacitance and sub-1 ns response. |
| Audio Codec I²S Bus | Automotive Infotainment Display Port |
|
Use Scenario: Shielding master clock (MCLK), word select (WS), and serial data (SD) lines of AK4490EQ DACs from board-level ESD coupling. IC Role / Device Role: Common-anode configuration used for bidirectional protection of WS line by connecting K1/K2 across signal and ground. Use Value: Eliminates audible pop artifacts during headphone insertion by clamping transients below DAC's 2.5 V absolute maximum rating. |
Use Scenario: Protecting MIPI DSI clock and data lanes in 10.25″ digital instrument clusters subjected to dashboard assembly ESD. IC Role / Device Role: Two MMBZ12VAL-Q units deployed per display interface - one for clock pair, one for data lane group. Use Value: Ensures zero frame drop during 15 kV air discharge testing per ISO 10605, preserving ASIL-B functional safety compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4201MR6T1G | Higher capacitance (300 pF typ), lower clamping voltage (13.5 V), bidirectional dual-diode architecture | Better suited for low-voltage logic (1.8 V IO) but degrades signal integrity above 25 MHz | Select when protecting sub-1.8 V GPIOs where clamping voltage margin is critical and bandwidth <10 MHz |
| Vishay ESDBLE5.0D1W | Lower standoff (5.0 V), lower capacitance (15 pF), AEC-Q200 qualified but not Q101 | Optimized for USB 3.0 SuperSpeed lanes; lacks automotive-grade lifetime validation | Choose for consumer-grade high-speed interfaces requiring <20 pF loading, not for under-hood automotive use |
Compared with NUP4201MR6T1G and ESDBLE5.0D1W, MMBZ12VAL-Q uniquely balances AEC-Q101 compliance, 8.5 V standoff for 5 V systems, and 140 pF capacitance - making it the only option qualified for dual-line protection in automotive body electronics with validated 150 °C junction operation.
Availability
MMBZ12VAL-Q is available at Aetrix Electronics and suitable for automotive electronic control units, USB 2.0 peripheral interfaces, and audio codec I²S buses requiring stable component supply across multi-year production cycles.
Supply support for MMBZ12VAL-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and mobile markets.
MMBZ12VAL-Q belongs to Nexperia's Automotive-qualified ESD Protection portfolio, engineered specifically for robust, low-capacitance transient suppression in safety-critical vehicle subsystems and high-reliability industrial interfaces.
FAQ
What is the maximum recommended PCB trace length between MMBZ12VAL-Q and the protected connector?
Per Nexperia application guidance, the trace length from the device cathodes (pins 1 and 2) to the protected line must be ≤3 mm, and the anode (pin 3) must connect directly to a low-inductance ground plane via a dedicated via within 1 mm. Longer traces increase inductive overshoot during ESD events, risking clamping voltage exceedance beyond 17 V.
Can MMBZ12VAL-Q protect bidirectional communication lines like RS-485?
No - MMBZ12VAL-Q is unidirectional and unsuitable for true bidirectional differential buses. Its common-anode topology clamps only positive transients on each cathode line. For RS-485, use a dedicated bidirectional TVS like PESD5V0S1BA-AX, which provides symmetrical ±5 V standoff and clamping in both directions.
Does the 30 kV ESD rating apply to both pins 1 and 2 simultaneously?
Yes - the 30 kV contact discharge rating is verified independently on pin 1-to-pin 3 and pin 2-to-pin 3 per IEC 61000-4-2. However, simultaneous 30 kV strikes on both pins exceed the device's total 40 W PPPM rating and may cause thermal failure; system-level design must ensure single-point strike dominance.
How does thermal resistance affect derating at elevated ambient temperatures?
With Rth(j-a) = 460 K/W, junction temperature rises ~215 °C per watt at 25 °C ambient. At 85 °C ambient, the 40 W PPPM rating must be reduced to 18.6 W to maintain Tj ≤ 150 °C - calculated using ΔT = P × Rth. Derating curves in Figure 4 confirm 46% power reduction at 125 °C ambient.
MMBZ12VAL-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V (Max)
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 2.35A
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 110pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
MMBZ12VAL-QR FAQ
1.How can I place an order for MMBZ12VAL-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ12VAL-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ12VAL-QR reliable?
The price and inventory of MMBZ12VAL-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ12VAL-QR is usually 5 days.
3.What payment methods are accepted for MMBZ12VAL-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ12VAL-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ12VAL-QR?
MMBZ12VAL-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ12VAL-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ12VAL-QR?
For technical support, including MMBZ12VAL-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ12VAL-QR requirements.
6.How does Aetrix verify that MMBZ12VAL-QR is sourced from the original manufacturer or authorized distributors?
All MMBZ12VAL-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ12VAL-QR meets industry standards.
7.What is the process for return or replacement of MMBZ12VAL-QR?
All MMBZ12VAL-QR units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ12VAL-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ12VAL-QR part is unused and in its original packaging.
Return procedure for MMBZ12VAL-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ12VAL-QR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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